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IXTN660N04T4

IXTN660N04T4 IXYS

littelfuse_discrete_mosfets_n-channel_trench_gate_ixtn660n04t4_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 40V 660A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
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Lieferzeit 10-14 Tag (e)
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1+49.17 EUR
10+43.7 EUR
100+38.22 EUR
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Technische Details IXTN660N04T4 IXYS

Description: MOSFET N-CH 40V 660A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 660A (Tc), Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V.

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IXTN660N04T4 IXTN660N04T4 Hersteller : IXYS media-3319638.pdf MOSFET Modules 40V/660A TrenchT4 Power MOSFET
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