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Technische Details IXFJ26N50P3 IXYS
Description: MOSFET N-CH 500V 14A TO247, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Supplier Device Package: TO-247 (IXTH), Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 265mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active.
Weitere Produktangebote IXFJ26N50P3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFJ26N50P3 | IXYS |
 Description: MOSFET N-CH 500V 14A TO247Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 5V @ 4mA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXFJ26N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 78A Power dissipation: 180W Case: ISO247™ Gate-source voltage: ±30V On-state resistance: 0.295Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar3™ Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFJ26N50P3 |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 14A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CH 500V 14A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFJ26N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 180W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 78A
Power dissipation: 180W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH