IXYX100N65B3D1 IXYS
Hersteller: IXYSDescription: IGBT PT 650V 225A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 156 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 1.37mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
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Technische Details IXYX100N65B3D1 IXYS
Description: IGBT PT 650V 225A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 156 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 29ns/150ns, Switching Energy: 1.27mJ (on), 1.37mJ (off), Test Condition: 400V, 50A, 3Ohm, 15V, Gate Charge: 168 nC, Current - Collector (Ic) (Max): 225 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 460 A, Power - Max: 830 W.
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IXYX100N65B3D1 | Hersteller : IXYS |
IGBTs Disc IGBT XPT-GenX3 TO-247AD |
Produkt ist nicht verfügbar |
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IXYX100N65B3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™ Mounting: THT Kind of package: tube Case: PLUS247™ Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Turn-on time: 65ns Gate charge: 168nC Turn-off time: 358ns Gate-emitter voltage: ±20V Collector current: 100A Power dissipation: 830W Pulsed collector current: 460A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |