IXFP14N85XM IXYS
Hersteller: IXYS
Description: MOSFET N-CHANNEL 850V 14A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.48 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
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Technische Details IXFP14N85XM IXYS
Description: MOSFET N-CHANNEL 850V 14A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V.
Weitere Produktangebote IXFP14N85XM nach Preis ab 8.07 EUR bis 16.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXFP14N85XM | IXYS |
MOSFETs 850V/14A UlJun XCl |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP14N85XM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Power dissipation: 38W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 116ns Features of semiconductor devices: ultra junction x-class |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFP14N85XM |
|
Hersteller: IXYS
MOSFETs 850V/14A UlJun XCl
MOSFETs 850V/14A UlJun XCl
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.34 EUR |
| 10+ | 8.95 EUR |
| 100+ | 8.19 EUR |
| 500+ | 8.07 EUR |
| IXFP14N85XM |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 38W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Power dissipation: 38W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)