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IXYH8N250CV1HV IXYH8N250CV1HV IXYS littelfuse_discrete_igbts_xpt_ixyh8n250cv1hv_datasheet.pdf.pdf Description: IGBT 2500V 29A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
Produkt ist nicht verfügbar
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IXYH30N65C3 IXYH30N65C3 IXYS littelfuse_discrete_igbts_xpt_ixy_30n65c3_datasheet.pdf.pdf Description: IGBT 650V 60A 270W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
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IXYH40N65C3D1 IXYH40N65C3D1 IXYS Description: IGBT PT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/110ns
Switching Energy: 830µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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IXYH40N65B3D1 IXYH40N65B3D1 IXYS littelfuse_discrete_igbts_xpt_ixy_40n65b3d1_datasheet.pdf.pdf Description: IGBT 650V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 800µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 300 W
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IXYH40N65C3H1 IXYH40N65C3H1 IXYS Description: IGBT PT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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IXYH40N65C3 IXYH40N65C3 IXYS littelfuse-discrete-igbts-ixyh40n65c3-datasheet?assetguid=09bd2958-7a8f-4ac3-9434-46d6ebaf6db3 Description: IGBT PT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXTV130N15T IXTV130N15T IXYS Description: MOSFET N-CH 150V 130A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Supplier Device Package: PLUS220
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
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IXGA30N60C3 IXGA30N60C3 IXYS media?resourcetype=datasheets&itemid=1c2e09fe-9002-469e-a60b-7957698727f8&filename=littelfuse_discrete_igbts_pt_ixg_30n60c3_datasheet.pdf Description: IGBT 600V 60A 220W TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
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N6012ZD060 IXYS media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf Description: SCR 600V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 600 V
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IXFA130N15X3TRL IXFA130N15X3TRL IXYS Description: MOSFET N-CH 150V 130A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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IXFA130N15X3 IXFA130N15X3 IXYS DS100808B(IXFA-FP-FH130N15X3).pdf Description: MOSFET N-CH 150V 130A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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50+12.19 EUR
100+10.91 EUR
500+9.62 EUR
1000+8.66 EUR
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A1237NC240 IXYS Description: SCR 2.4KV 2555A W11
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IXTT1N250HV-TRL IXTT1N250HV-TRL IXYS littelfuse-discrete-mosfets-ixtt1n250hv-datasheet?assetguid=b97491fe-f9b5-41c0-b140-7e8b8600f646 Description: MOSFET N-CH 2500V 1.5A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
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IXFH14N100Q IXYS Description: MOSFET N-CH 1000V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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MCC56-14IO1 MCC56-14IO1 IXYS media?resourcetype=datasheets&amp;itemid=cfb3c490-89ab-491f-b950-ed2ed4146151&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc56-14io1%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 64 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.4 kV
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IXTA220N04T2-TRL IXTA220N04T2-TRL IXYS Description: MOSFET N-CH 40V 220A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
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CMA50E1600HB CMA50E1600HB IXYS media?resourcetype=datasheets&itemid=f4358637-7c3d-484f-8bf1-dc9dd27d441c&filename=Littelfuse-Power-Semiconductors-CMA50E1600HB-Datasheet Description: SCR 1.6KV 79A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
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IXTY1R4N120PHV IXTY1R4N120PHV IXYS DS99871E(IXTY-TA-TP1R4N120P-HV).pdf Description: MOSFET N-CH 1200V 1.4A TO252
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IXTY1R4N120P-TRL IXYS Description: MOSFET N-CH 1200V 1.4A TO252
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IXTA1R4N120P-TRL IXTA1R4N120P-TRL IXYS Description: MOSFET N-CH 1200V 1.4A TO263
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DSEP15-06BS-TRL DSEP15-06BS-TRL IXYS media?resourcetype=datasheets&itemid=4d29f41a-7db8-4582-9d68-5338de39840d&filename=littelfuse%2520power%2520semiconductors%2520dsep15-06bs%2520datasheet.pdf Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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DSEP15-06BS-TUB DSEP15-06BS-TUB IXYS Description: DIODE GEN PURP 600V 15A TO263
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IXFH50N85X IXFH50N85X IXYS DS100704DIXFTFHFK50N85XHV.pdf Description: MOSFET N-CH 850V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
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IXYX40N450HV IXYX40N450HV IXYS Description: IGBT 4500V 95A TO-247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 36ns/110ns
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 660 W
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MDMA425P1600PTSF IXYS Description: DIODE MOD GP 1600V 425A SIMBUS F
Packaging: Box
Package / Case: SimBus F
Mounting Type: Chassis Mount
Technology: Standard
Current - Average Rectified (Io) (per Diode): 425A
Supplier Device Package: SimBus F
Voltage - DC Reverse (Vr) (Max): 1600 V
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MDMA425P1600PT-PC IXYS Description: MDMA425P1600PTSF-PC
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DSEC16-12AS-TRL DSEC16-12AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535 Description: DIODE ARRAY GP 1200V 10A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.94 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
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IXTA08N100D2-TRL IXTA08N100D2-TRL IXYS Description: IXTA08N100D2 TRL
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DSS2X61-01A DSS2X61-01A IXYS DSS2x61-01A.pdf Description: DIODE MOD SCHOT 100V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
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IXGM20N60A IXYS Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
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IXYX25N250CV1HV IXYX25N250CV1HV IXYS littelfuse-discrete-igbts-ixy-25n250cv1-datasheet?assetguid=20545de9-8196-4ebe-b113-81f68338f995 Description: IGBT 2500V 95A PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
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IXTA08N100D2HV IXTA08N100D2HV IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta08n100d2hv_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
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N1263JK160 IXYS media?resourcetype=datasheets&amp;itemid=6d6660e7-31eb-4054-b5f7-40b8de0602fe&amp;filename=littelfuse_discrete_thyristors_phase_control_n1263jk1_0_datasheet.pdf Description: SCR 1.6KV 2504A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - On State (It (AV)) (Max): 1263 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.25 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2504 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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N1263JK180 IXYS media?resourcetype=datasheets&amp;itemid=6d6660e7-31eb-4054-b5f7-40b8de0602fe&amp;filename=littelfuse_discrete_thyristors_phase_control_n1263jk1_0_datasheet.pdf Description: SCR 1.8KV 2504A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - On State (It (AV)) (Max): 1263 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.25 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2504 A
Voltage - Off State: 1.8 kV
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N1467NC200 IXYS Description: SCR 2KV 2912A W11
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N1467NC260 N1467NC260 IXYS Description: SCR 2.6KV 2912A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23600A @ 50Hz
Current - On State (It (AV)) (Max): 1467 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.69 V
Current - Off State (Max): 100 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2912 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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N1802NC120 IXYS Description: SCR 1.2KV 3592A W11
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N1802NC160 IXYS Description: SCR 1.6KV 3592A W11
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DSP45-16AZ-TUB DSP45-16AZ-TUB IXYS Littelfuse-Power-Semiconductors-DSP45-16AZ-Datasheet?assetguid=1060e112-2a21-4266-a8d9-5dbef72572b1 Description: DIODE STANDARD 1600V 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 19pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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IXTA05N100HV IXTA05N100HV IXYS littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745 Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Produkt ist nicht verfügbar
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IXGA48N60A3-TRL IXGA48N60A3-TRL IXYS 238_IXGA48N60A3.pdf Description: IGBT PT 600V 120A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
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IXBT42N170-TRL IXYS Description: IGBT 1700V 80A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 37ns/340ns
Test Condition: 850V, 42A, 10Ohm, 15V
Gate Charge: 188 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 360 W
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VBO40-08NO6 VBO40-08NO6 IXYS VBO40-08NO6.pdf Description: BRIDGE RECT 1P 800V 40A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
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IXFN44N50U2 IXFN44N50U2 IXYS Description: MOSFET N-CH 500V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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IXTH36P15P IXTH36P15P IXYS DS99791D(IXTA-P-H-Q36P15P).pdf Description: MOSFET P-CH 150V 36A TO247
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P0848YC06B IXYS media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf Description: SCR 600V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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IXTA44P15T-TRL IXTA44P15T-TRL IXYS littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Description: MOSFET P-CH 150V 44A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
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IXYH40N120A4 IXYH40N120A4 IXYS littelfuse_discrete_igbts_xpt_ixyh40n120a4_datasheet.pdf.pdf Description: IGBT 1200V 40A GENX4 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
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IXYT40N120A4HV IXYT40N120A4HV IXYS littelfuse_discrete_igbts_xpt_ixyt40n120a4hv_datasheet.pdf.pdf Description: IGBT PT 1200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
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IXG100IF1200HF IXYS Description: DISC IGBT XPT-GENX4 TO-247AD
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N0465WN160 IXYS Description: SCR 1.6KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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N3012ZC200 IXYS littelfusediscretethyristorsphasecontroln3012zc20datasheetpdf.pdf Description: SCR 2KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2 kV
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N3012ZC260 IXYS Description: SCR 2.6KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2.6 kV
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IXFH220N06T3 IXFH220N06T3 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_220n06t3_datasheet.pdf.pdf Description: MOSFET N-CH 60V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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IXFD15N100-8X IXYS Description: MOSFET N-CH
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IXFJ15N100Q IXYS Description: MOSFET N-CH TO-220
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IXFR15N100Q IXYS Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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IXTP8N70X2M IXTP8N70X2M IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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100+3.42 EUR
500+2.81 EUR
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W0642WC160 IXYS Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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IXBT2N250-TR IXYS Description: IGBT 2500V 5A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 30ns/70ns
Test Condition: 2000V, 2A, 47Ohm, 15V
Gate Charge: 10.6 nC
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
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IXYH8N250CV1HV littelfuse_discrete_igbts_xpt_ixyh8n250cv1hv_datasheet.pdf.pdf
IXYH8N250CV1HV
Hersteller: IXYS
Description: IGBT 2500V 29A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
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IXYH30N65C3 littelfuse_discrete_igbts_xpt_ixy_30n65c3_datasheet.pdf.pdf
IXYH30N65C3
Hersteller: IXYS
Description: IGBT 650V 60A 270W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
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IXYH40N65C3D1
IXYH40N65C3D1
Hersteller: IXYS
Description: IGBT PT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/110ns
Switching Energy: 830µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXYH40N65B3D1 littelfuse_discrete_igbts_xpt_ixy_40n65b3d1_datasheet.pdf.pdf
IXYH40N65B3D1
Hersteller: IXYS
Description: IGBT 650V 86A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 800µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXYH40N65C3H1
IXYH40N65C3H1
Hersteller: IXYS
Description: IGBT PT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXYH40N65C3 littelfuse-discrete-igbts-ixyh40n65c3-datasheet?assetguid=09bd2958-7a8f-4ac3-9434-46d6ebaf6db3
IXYH40N65C3
Hersteller: IXYS
Description: IGBT PT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXTV130N15T
IXTV130N15T
Hersteller: IXYS
Description: MOSFET N-CH 150V 130A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Supplier Device Package: PLUS220
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
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IXGA30N60C3 media?resourcetype=datasheets&itemid=1c2e09fe-9002-469e-a60b-7957698727f8&filename=littelfuse_discrete_igbts_pt_ixg_30n60c3_datasheet.pdf
IXGA30N60C3
Hersteller: IXYS
Description: IGBT 600V 60A 220W TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
Produkt ist nicht verfügbar
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N6012ZD060 media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf
Hersteller: IXYS
Description: SCR 600V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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IXFA130N15X3TRL
IXFA130N15X3TRL
Hersteller: IXYS
Description: MOSFET N-CH 150V 130A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
Produkt ist nicht verfügbar
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IXFA130N15X3 DS100808B(IXFA-FP-FH130N15X3).pdf
IXFA130N15X3
Hersteller: IXYS
Description: MOSFET N-CH 150V 130A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
auf Bestellung 1359 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.26 EUR
50+12.19 EUR
100+10.91 EUR
500+9.62 EUR
1000+8.66 EUR
Mindestbestellmenge: 2
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A1237NC240
Hersteller: IXYS
Description: SCR 2.4KV 2555A W11
Produkt ist nicht verfügbar
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IXTT1N250HV-TRL littelfuse-discrete-mosfets-ixtt1n250hv-datasheet?assetguid=b97491fe-f9b5-41c0-b140-7e8b8600f646
IXTT1N250HV-TRL
Hersteller: IXYS
Description: MOSFET N-CH 2500V 1.5A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 750mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
400+48.61 EUR
Mindestbestellmenge: 400
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IXFH14N100Q
Hersteller: IXYS
Description: MOSFET N-CH 1000V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
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MCC56-14IO1 media?resourcetype=datasheets&amp;itemid=cfb3c490-89ab-491f-b950-ed2ed4146151&amp;filename=littelfuse%2520power%2520semiconductors%2520mcc56-14io1%2520datasheet.pdf
MCC56-14IO1
Hersteller: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 64 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.4 kV
Produkt ist nicht verfügbar
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IXTA220N04T2-TRL
IXTA220N04T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 40V 220A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
Produkt ist nicht verfügbar
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CMA50E1600HB media?resourcetype=datasheets&itemid=f4358637-7c3d-484f-8bf1-dc9dd27d441c&filename=Littelfuse-Power-Semiconductors-CMA50E1600HB-Datasheet
CMA50E1600HB
Hersteller: IXYS
Description: SCR 1.6KV 79A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
auf Bestellung 1209 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.68 EUR
30+6.55 EUR
120+5.6 EUR
510+5.28 EUR
Mindestbestellmenge: 2
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IXTY1R4N120PHV DS99871E(IXTY-TA-TP1R4N120P-HV).pdf
IXTY1R4N120PHV
Hersteller: IXYS
Description: MOSFET N-CH 1200V 1.4A TO252
Produkt ist nicht verfügbar
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IXTY1R4N120P-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 1.4A TO252
Produkt ist nicht verfügbar
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IXTA1R4N120P-TRL
IXTA1R4N120P-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 1.4A TO263
Produkt ist nicht verfügbar
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DSEP15-06BS-TRL media?resourcetype=datasheets&itemid=4d29f41a-7db8-4582-9d68-5338de39840d&filename=littelfuse%2520power%2520semiconductors%2520dsep15-06bs%2520datasheet.pdf
DSEP15-06BS-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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DSEP15-06BS-TUB
DSEP15-06BS-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 600V 15A TO263
Produkt ist nicht verfügbar
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IXFH50N85X DS100704DIXFTFHFK50N85XHV.pdf
IXFH50N85X
Hersteller: IXYS
Description: MOSFET N-CH 850V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
auf Bestellung 906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.64 EUR
30+15.86 EUR
120+15.4 EUR
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IXYX40N450HV
IXYX40N450HV
Hersteller: IXYS
Description: IGBT 4500V 95A TO-247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 36ns/110ns
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 660 W
auf Bestellung 398 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+108.91 EUR
30+82.94 EUR
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MDMA425P1600PTSF
Hersteller: IXYS
Description: DIODE MOD GP 1600V 425A SIMBUS F
Packaging: Box
Package / Case: SimBus F
Mounting Type: Chassis Mount
Technology: Standard
Current - Average Rectified (Io) (per Diode): 425A
Supplier Device Package: SimBus F
Voltage - DC Reverse (Vr) (Max): 1600 V
Produkt ist nicht verfügbar
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MDMA425P1600PT-PC
Hersteller: IXYS
Description: MDMA425P1600PTSF-PC
Produkt ist nicht verfügbar
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DSEC16-12AS-TRL Littelfuse-Power-Semiconductors-DSEC16-12AS-Datasheet?assetguid=1bffda27-af90-42db-9de4-c3ec94867535
DSEC16-12AS-TRL
Hersteller: IXYS
Description: DIODE ARRAY GP 1200V 10A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.94 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Produkt ist nicht verfügbar
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IXTA08N100D2-TRL
IXTA08N100D2-TRL
Hersteller: IXYS
Description: IXTA08N100D2 TRL
Produkt ist nicht verfügbar
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DSS2X61-01A DSS2x61-01A.pdf
DSS2X61-01A
Hersteller: IXYS
Description: DIODE MOD SCHOT 100V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 60 A
Current - Reverse Leakage @ Vr: 2 mA @ 100 V
Produkt ist nicht verfügbar
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IXGM20N60A
Hersteller: IXYS
Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IXYX25N250CV1HV littelfuse-discrete-igbts-ixy-25n250cv1-datasheet?assetguid=20545de9-8196-4ebe-b113-81f68338f995
IXYX25N250CV1HV
Hersteller: IXYS
Description: IGBT 2500V 95A PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+91.8 EUR
30+68.43 EUR
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IXTA08N100D2HV littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta08n100d2hv_datasheet.pdf.pdf
IXTA08N100D2HV
Hersteller: IXYS
Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+5.54 EUR
Mindestbestellmenge: 50
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N1263JK160 media?resourcetype=datasheets&amp;itemid=6d6660e7-31eb-4054-b5f7-40b8de0602fe&amp;filename=littelfuse_discrete_thyristors_phase_control_n1263jk1_0_datasheet.pdf
Hersteller: IXYS
Description: SCR 1.6KV 2504A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - On State (It (AV)) (Max): 1263 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.25 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2504 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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N1263JK180 media?resourcetype=datasheets&amp;itemid=6d6660e7-31eb-4054-b5f7-40b8de0602fe&amp;filename=littelfuse_discrete_thyristors_phase_control_n1263jk1_0_datasheet.pdf
Hersteller: IXYS
Description: SCR 1.8KV 2504A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - On State (It (AV)) (Max): 1263 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.25 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2504 A
Voltage - Off State: 1.8 kV
Produkt ist nicht verfügbar
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N1467NC200
Hersteller: IXYS
Description: SCR 2KV 2912A W11
Produkt ist nicht verfügbar
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N1467NC260
N1467NC260
Hersteller: IXYS
Description: SCR 2.6KV 2912A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 23600A @ 50Hz
Current - On State (It (AV)) (Max): 1467 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.69 V
Current - Off State (Max): 100 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2912 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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N1802NC120
Hersteller: IXYS
Description: SCR 1.2KV 3592A W11
Produkt ist nicht verfügbar
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N1802NC160
Hersteller: IXYS
Description: SCR 1.6KV 3592A W11
Produkt ist nicht verfügbar
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DSP45-16AZ-TUB Littelfuse-Power-Semiconductors-DSP45-16AZ-Datasheet?assetguid=1060e112-2a21-4266-a8d9-5dbef72572b1
DSP45-16AZ-TUB
Hersteller: IXYS
Description: DIODE STANDARD 1600V 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 19pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.54 EUR
30+9.15 EUR
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IXTA05N100HV littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745
IXTA05N100HV
Hersteller: IXYS
Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Produkt ist nicht verfügbar
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IXGA48N60A3-TRL 238_IXGA48N60A3.pdf
IXGA48N60A3-TRL
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.4 EUR
10+6.28 EUR
100+4.52 EUR
Mindestbestellmenge: 2
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IXBT42N170-TRL
Hersteller: IXYS
Description: IGBT 1700V 80A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 37ns/340ns
Test Condition: 850V, 42A, 10Ohm, 15V
Gate Charge: 188 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 360 W
Produkt ist nicht verfügbar
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VBO40-08NO6 VBO40-08NO6.pdf
VBO40-08NO6
Hersteller: IXYS
Description: BRIDGE RECT 1P 800V 40A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+45.6 EUR
10+40.53 EUR
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IXFN44N50U2
IXFN44N50U2
Hersteller: IXYS
Description: MOSFET N-CH 500V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH36P15P DS99791D(IXTA-P-H-Q36P15P).pdf
IXTH36P15P
Hersteller: IXYS
Description: MOSFET P-CH 150V 36A TO247
Produkt ist nicht verfügbar
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P0848YC06B media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf
Hersteller: IXYS
Description: SCR 600V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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IXTA44P15T-TRL littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTA44P15T-TRL
Hersteller: IXYS
Description: MOSFET P-CH 150V 44A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+4.99 EUR
Mindestbestellmenge: 800
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IXYH40N120A4 littelfuse_discrete_igbts_xpt_ixyh40n120a4_datasheet.pdf.pdf
IXYH40N120A4
Hersteller: IXYS
Description: IGBT 1200V 40A GENX4 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
Produkt ist nicht verfügbar
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IXYT40N120A4HV littelfuse_discrete_igbts_xpt_ixyt40n120a4hv_datasheet.pdf.pdf
IXYT40N120A4HV
Hersteller: IXYS
Description: IGBT PT 1200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
Produkt ist nicht verfügbar
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IXG100IF1200HF
Hersteller: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Produkt ist nicht verfügbar
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N0465WN160
Hersteller: IXYS
Description: SCR 1.6KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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N3012ZC200 littelfusediscretethyristorsphasecontroln3012zc20datasheetpdf.pdf
Hersteller: IXYS
Description: SCR 2KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2 kV
Produkt ist nicht verfügbar
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N3012ZC260
Hersteller: IXYS
Description: SCR 2.6KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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IXFH220N06T3 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_220n06t3_datasheet.pdf.pdf
IXFH220N06T3
Hersteller: IXYS
Description: MOSFET N-CH 60V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Produkt ist nicht verfügbar
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IXFD15N100-8X
Hersteller: IXYS
Description: MOSFET N-CH
Produkt ist nicht verfügbar
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IXFJ15N100Q
Hersteller: IXYS
Description: MOSFET N-CH TO-220
Produkt ist nicht verfügbar
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IXFR15N100Q
Hersteller: IXYS
Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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IXTP8N70X2M littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP8N70X2M
Hersteller: IXYS
Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.34 EUR
50+3.76 EUR
100+3.42 EUR
500+2.81 EUR
1000+2.62 EUR
Mindestbestellmenge: 3
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W0642WC160
Hersteller: IXYS
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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IXBT2N250-TR
Hersteller: IXYS
Description: IGBT 2500V 5A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 30ns/70ns
Test Condition: 2000V, 2A, 47Ohm, 15V
Gate Charge: 10.6 nC
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
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