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DSEI25-06AS-TUB DSEI25-06AS-TUB IXYS Description: DIODE STANDARD 600V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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50+3.81 EUR
100+3.63 EUR
Mindestbestellmenge: 3
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IXTQ69N30PM IXYS a Description: MOSFET N-CH 300V 25A TO3PFP
Produkt ist nicht verfügbar
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IXFK50N85X IXFK50N85X IXYS DS100704DIXFTFHFK50N85XHV.pdf Description: MOSFET N-CH 850V 50A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-264AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
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MDNA210UB2200PTED IXYS Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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MDNA280UB2200PTED IXYS Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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IXTA3N120HV-TRL IXTA3N120HV-TRL IXYS littelfuse-discrete-mosfets-ixta3n120hv-datasheet?assetguid=6a632cdd-ab5c-4fd5-85f6-2f91fead1e78 Description: MOSFET N-CH 1200V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IXTA3N120-TRR IXTA3N120-TRR IXYS littelfuse-discrete-mosfets-ixtp3n120-datasheet?assetguid=62ac5571-cff4-4f49-9438-bfa628c5f974 Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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IXYY8N90C3-TRL IXYY8N90C3-TRL IXYS littelfuse-discrete-igbts-ixy-8n90c3-datasheet?assetguid=11d4bd5c-8ae2-405e-8bec-58f631ef5fbe Description: IGBT PT 900V 20A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 20 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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MCD162-16io1B MCD162-16io1B IXYS Description: SCR MODULE 1.6KV 300A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 181 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
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DAA10EM1800PZ-TRL DAA10EM1800PZ-TRL IXYS media?resourcetype=datasheets&itemid=8b1378fb-444d-4854-bf2e-b3d297066d3b&filename=Littelfuse-Power-Semiconductors-DAA10EM1800PZ-Datasheet Description: DIODE AVAL 1.8KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
Produkt ist nicht verfügbar
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DAA10EM1800PZ-TUB DAA10EM1800PZ-TUB IXYS media?resourcetype=datasheets&itemid=8b1378fb-444d-4854-bf2e-b3d297066d3b&filename=Littelfuse-Power-Semiconductors-DAA10EM1800PZ-Datasheet Description: DIODE AVAL 1.8KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
Produkt ist nicht verfügbar
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IXGN200N170 IXGN200N170 IXYS littelfuse-discrete-igbts-ixgn200n170-datasheet?assetguid=7e04c6cf-4f13-4544-a332-6f459d9482a9 Description: IGBT 1700V 280A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 133 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 37ns/320ns
Switching Energy: 28mJ (on), 30mJ (off)
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 540 nC
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 1050 A
Power - Max: 1250 W
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IXYH50N120C3D1 IXYH50N120C3D1 IXYS littelfuse_discrete_igbts_xpt_ixyh50n120c3d1_datasheet.pdf.pdf Description: IGBT 1200V 90A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 625 W
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IXYH50N120C3 IXYH50N120C3 IXYS DS100343CIXYH50N120C3.pdf Description: IGBT 1200V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 750 W
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IXGT72N60A3-TRL IXYS Description: IGBT PT 600V 75A TO-268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.38mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
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IXYH30N65C3H1 IXYH30N65C3H1 IXYS littelfuse_discrete_igbts_xpt_ixy_30n65c3h1_datasheet.pdf.pdf Description: IGBT 650V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
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IXFA3N120-TRR IXFA3N120-TRR IXYS Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
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MCC95-14IO1 MCC95-14IO1 IXYS littelfuse-power-semiconductors-mcc95-14io1-datasheet?assetguid=7454aafc-45a9-4439-be28-a68a9e0ca580 Description: SCR MODULE 1.4KV 182A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 182 A
Voltage - Off State: 1.4 kV
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MCC95-16IO1 MCC95-16IO1 IXYS MCC9516io1.pdf Description: SCR MODULE 1.6KV 182A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 182 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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MMIX1X340N65B4 IXYS DS100598A(MMIX1X340N65B4).pdf Description: MOSFET N-CH
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IXA4I1200UC-TRL IXA4I1200UC-TRL IXYS IXA4I1200UC.pdf Description: IGBT 1200V 9A 45W TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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IXA4IF1200UC-TRL IXA4IF1200UC-TRL IXYS littelfuse_discrete_igbts_xpt_ixa4if1200uc_datasheet.pdf.pdf Description: IGBT 1200V 9A 45W TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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IXA4I1200UC-TUB IXYS media?resourcetype=datasheets&itemid=d9845082-6932-4641-bff2-4975637e4e13&filename=littelfuse%2520power%2520semiconductors%2520ixa4i1200uc%2520datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-252D
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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IXA4IF1200UC-TUB IXYS Description: DISC IGBT XPT-GENX3 TO-252D
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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DSEI2X60-04C DSEI2X60-04C IXYS media?resourcetype=datasheets&itemid=09f9b2c2-a97d-49db-a728-472a9e688f56&filename=littelfuse%2520power%2520semiconductors%2520dsei2x60-04c%2520datasheet.pdf Description: DIODE MODULE GP 400V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 400 V
Produkt ist nicht verfügbar
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DCG17P1200HR IXYS Description: POWER DIODE DISC-SCHOTTKY ISOPLU
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IXFR16N90Q IXYS Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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DSP8-12S-TRL DSP8-12S-TRL IXYS DSP8-12S.pdf Description: DIODE ARRAY GP 1200V 11A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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DSEP29-06AS-TRL DSEP29-06AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060 Description: DIODE STANDARD 600V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
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DSEP29-06AS-TUB DSEP29-06AS-TUB IXYS Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060 Description: DIODE ARRAY GP 600V TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.94 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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DLA40IM800PC-TUB DLA40IM800PC-TUB IXYS DLA40IM800PC.pdf Description: DIODE GEN PURP 800V 40A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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IXTF6N200P3 IXYS DS100716(IXTF6N200P3).pdf Description: MOSFET N-CH
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IXTF2N300P3 IXYS DS100712(IXTF2N300P3).pdf Description: MOSFET N-CH
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IXFR20N80Q IXYS Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
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IXFX20N80Q IXFX20N80Q IXYS Description: MOSFET N-CH 800V 20A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
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IXYP24N100C4 IXYP24N100C4 IXYS media?resourcetype=datasheets&itemid=9e764d41-4809-4a1d-9928-1cb6ca6c9107&filename=littelfuse_discrete_igbts_xpt_ixy_24n100c4_datasheet.pdf Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/147ns
Switching Energy: 3.6mJ (on), 1mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 132 A
Power - Max: 375 W
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IXFN24N100F IXFN24N100F IXYS description Description: MOSFET N-CH 1000V 24A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IXFX24N100F IXFX24N100F IXYS Description: MOSFET N-CH 1000V 24A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IXTY08N100P-TRL IXYS Description: IXTY08N100P TRL
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IXYH75N65C3H1 IXYH75N65C3H1 IXYS littelfuse-discrete-igbts-ixyh75n65c3h1-datasheet?assetguid=224dfb65-7587-4f7c-8b16-0c4c9033fed6 Description: IGBT PT 650V 170A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
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IXYH75N65C3 IXYH75N65C3 IXYS media?resourcetype=datasheets&itemid=880AF1F0-BCE9-40BF-B617-AC7060048A7A&filename=Littelfuse-Discrete-IGBTs-XPT-IXYH75N65C3-Datasheet.PDF Description: IGBT PT 650V 170A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
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IXYH50N65C3D1 IXYH50N65C3D1 IXYS media?resourcetype=datasheets&itemid=834EE2EA-9CEA-402F-8D05-EFCC34AF555B&filename=Littelfuse-Discrete-IGBTs-XPT-IXYH50N65C3D1-Datasheet.PDF Description: IGBT 650V 132A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 800µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
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IXFN27N120SK IXYS Description: SICARBIDE-DISCRETE MOSFET SOT-22
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MIXA80W1200PTEH IXYS Description: IGBT MODULE SIXPACK E3-PACK-PF
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IXFY30N25X3 IXFY30N25X3 IXYS littelfuse-discrete-mosfets-ixf-30n25x3-datasheet?assetguid=f98c5907-f43b-4415-a418-45a0a7855e6d Description: MOSFET N-CH 250V 30A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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IXTQ36P15P IXTQ36P15P IXYS littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86 Description: MOSFET P-CH 150V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
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IXFP14N55X2 IXYS Description: IXFP14N55X2
Packaging: Tube
Produkt ist nicht verfügbar
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IXFP14N55X2M IXYS Description: IXFP14N55X2M
Packaging: Tube
Produkt ist nicht verfügbar
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IXFK21N100F IXFK21N100F IXYS DS98880A(IXFK-FX21N100F).pdf Description: MOSFET N-CH 1000V 21A TO264
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IXTM1630 IXYS Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
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N4845EE320 N4845EE320 IXYS media?resourcetype=datasheets&itemid=A38836A5-5E37-4579-BBBB-5CC2031DEE94&filename=Littelfuse-Discrete-Thyristors-Phase-Control-N4845EE3-0-Datasheet.PDF Description: SCR 3.2KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50Hz
Current - On State (It (AV)) (Max): 4845 A
Supplier Device Package: W108
Voltage - Off State: 3.2 kV
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IXYT55N120A4HV IXYT55N120A4HV IXYS 014125.pdf Description: IGBT PT 1200V 175A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
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IXYH55N120A4 IXYH55N120A4 IXYS littelfuse-discrete-igbts-xpt-ixyh55n120a4-datasheet?assetguid=7cc37be0-870e-4788-8cf1-9672fa37c982 Description: IGBT PT 1200V 175A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
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IXYH85N120A4 IXYH85N120A4 IXYS littelfuse-discrete-igbts-xpt-ixyh85n120a4-datasheet?assetguid=f5249e62-6772-4617-a066-4441b1dbab32 Description: IGBT PT 1200V 300A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
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IXTY48P05T-TRL IXTY48P05T-TRL IXYS littelfusediscretemosfetspchannelixt48p05td.pdf Description: MOSFET P-CH 50V 48A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
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IXTA48P05T-TRL IXTA48P05T-TRL IXYS littelfuse-discrete-mosfets-ixt-4n80p-datasheet?assetguid=595aff53-2a35-43a0-b191-4cbac9044a16 Description: MOSFET P-CH 50V 48A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
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IXYK140N120A4 IXYK140N120A4 IXYS IXYK140N120A4_DS.pdf Description: IGBT PT 1200V 480A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
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IXYX140N120A4 IXYX140N120A4 IXYS IXYX140N120A4_DS.pdf Description: IGBT PT 1200V 480A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
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IXYN140N120A4 IXYN140N120A4 IXYS littelfuse-discrete-igbts-xpt-ixyn140n120a4-datasheet?assetguid=13a5ea28-9028-4ba7-bc80-764d7c886511 Description: IGBT MODULE 1200V 380A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1070 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V
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IXTA3N110-TRL IXTA3N110-TRL IXYS Description: IXTA3N110 TRL
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DSEI25-06AS-TUB
DSEI25-06AS-TUB
Hersteller: IXYS
Description: DIODE STANDARD 600V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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IXTQ69N30PM a
Hersteller: IXYS
Description: MOSFET N-CH 300V 25A TO3PFP
Produkt ist nicht verfügbar
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IXFK50N85X DS100704DIXFTFHFK50N85XHV.pdf
IXFK50N85X
Hersteller: IXYS
Description: MOSFET N-CH 850V 50A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-264AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
auf Bestellung 95 Stücke:
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Anzahl Preis
1+29.34 EUR
25+18.76 EUR
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MDNA210UB2200PTED
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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MDNA280UB2200PTED
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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IXTA3N120HV-TRL littelfuse-discrete-mosfets-ixta3n120hv-datasheet?assetguid=6a632cdd-ab5c-4fd5-85f6-2f91fead1e78
IXTA3N120HV-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IXTA3N120-TRR littelfuse-discrete-mosfets-ixtp3n120-datasheet?assetguid=62ac5571-cff4-4f49-9438-bfa628c5f974
IXTA3N120-TRR
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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IXYY8N90C3-TRL littelfuse-discrete-igbts-ixy-8n90c3-datasheet?assetguid=11d4bd5c-8ae2-405e-8bec-58f631ef5fbe
IXYY8N90C3-TRL
Hersteller: IXYS
Description: IGBT PT 900V 20A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 20 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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MCD162-16io1B
MCD162-16io1B
Hersteller: IXYS
Description: SCR MODULE 1.6KV 300A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 181 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+82.1 EUR
Mindestbestellmenge: 6
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DAA10EM1800PZ-TRL media?resourcetype=datasheets&itemid=8b1378fb-444d-4854-bf2e-b3d297066d3b&filename=Littelfuse-Power-Semiconductors-DAA10EM1800PZ-Datasheet
DAA10EM1800PZ-TRL
Hersteller: IXYS
Description: DIODE AVAL 1.8KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
Produkt ist nicht verfügbar
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DAA10EM1800PZ-TUB media?resourcetype=datasheets&itemid=8b1378fb-444d-4854-bf2e-b3d297066d3b&filename=Littelfuse-Power-Semiconductors-DAA10EM1800PZ-Datasheet
DAA10EM1800PZ-TUB
Hersteller: IXYS
Description: DIODE AVAL 1.8KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
Produkt ist nicht verfügbar
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IXGN200N170 littelfuse-discrete-igbts-ixgn200n170-datasheet?assetguid=7e04c6cf-4f13-4544-a332-6f459d9482a9
IXGN200N170
Hersteller: IXYS
Description: IGBT 1700V 280A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 133 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 37ns/320ns
Switching Energy: 28mJ (on), 30mJ (off)
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 540 nC
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 1050 A
Power - Max: 1250 W
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+105.2 EUR
10+81.06 EUR
100+80.64 EUR
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IXYH50N120C3D1 littelfuse_discrete_igbts_xpt_ixyh50n120c3d1_datasheet.pdf.pdf
IXYH50N120C3D1
Hersteller: IXYS
Description: IGBT 1200V 90A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 625 W
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.54 EUR
30+15.66 EUR
120+13.5 EUR
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IXYH50N120C3 DS100343CIXYH50N120C3.pdf
IXYH50N120C3
Hersteller: IXYS
Description: IGBT 1200V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 750 W
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.74 EUR
30+10.64 EUR
120+9.08 EUR
510+8.56 EUR
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IXGT72N60A3-TRL
Hersteller: IXYS
Description: IGBT PT 600V 75A TO-268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 31ns/320ns
Switching Energy: 1.38mJ (on), 3.5mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 540 W
Produkt ist nicht verfügbar
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IXYH30N65C3H1 littelfuse_discrete_igbts_xpt_ixy_30n65c3h1_datasheet.pdf.pdf
IXYH30N65C3H1
Hersteller: IXYS
Description: IGBT 650V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Produkt ist nicht verfügbar
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IXFA3N120-TRR
IXFA3N120-TRR
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
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MCC95-14IO1 littelfuse-power-semiconductors-mcc95-14io1-datasheet?assetguid=7454aafc-45a9-4439-be28-a68a9e0ca580
MCC95-14IO1
Hersteller: IXYS
Description: SCR MODULE 1.4KV 182A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 182 A
Voltage - Off State: 1.4 kV
auf Bestellung 61 Stücke:
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Anzahl Preis
1+60.58 EUR
36+41.13 EUR
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MCC95-16IO1 MCC9516io1.pdf
MCC95-16IO1
Hersteller: IXYS
Description: SCR MODULE 1.6KV 182A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 182 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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MMIX1X340N65B4 DS100598A(MMIX1X340N65B4).pdf
Hersteller: IXYS
Description: MOSFET N-CH
auf Bestellung 980 Stücke:
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IXA4I1200UC-TRL IXA4I1200UC.pdf
IXA4I1200UC-TRL
Hersteller: IXYS
Description: IGBT 1200V 9A 45W TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
Produkt ist nicht verfügbar
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IXA4IF1200UC-TRL littelfuse_discrete_igbts_xpt_ixa4if1200uc_datasheet.pdf.pdf
IXA4IF1200UC-TRL
Hersteller: IXYS
Description: IGBT 1200V 9A 45W TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
Produkt ist nicht verfügbar
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IXA4I1200UC-TUB media?resourcetype=datasheets&itemid=d9845082-6932-4641-bff2-4975637e4e13&filename=littelfuse%2520power%2520semiconductors%2520ixa4i1200uc%2520datasheet.pdf
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-252D
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
auf Bestellung 1260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
350+2.15 EUR
Mindestbestellmenge: 350
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IXA4IF1200UC-TUB
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-252D
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
Produkt ist nicht verfügbar
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DSEI2X60-04C media?resourcetype=datasheets&itemid=09f9b2c2-a97d-49db-a728-472a9e688f56&filename=littelfuse%2520power%2520semiconductors%2520dsei2x60-04c%2520datasheet.pdf
DSEI2X60-04C
Hersteller: IXYS
Description: DIODE MODULE GP 400V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 400 V
Produkt ist nicht verfügbar
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DCG17P1200HR
Hersteller: IXYS
Description: POWER DIODE DISC-SCHOTTKY ISOPLU
Produkt ist nicht verfügbar
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IXFR16N90Q
Hersteller: IXYS
Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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DSP8-12S-TRL DSP8-12S.pdf
DSP8-12S-TRL
Hersteller: IXYS
Description: DIODE ARRAY GP 1200V 11A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
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DSEP29-06AS-TRL Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060
DSEP29-06AS-TRL
Hersteller: IXYS
Description: DIODE STANDARD 600V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
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DSEP29-06AS-TUB Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060
DSEP29-06AS-TUB
Hersteller: IXYS
Description: DIODE ARRAY GP 600V TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.94 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
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DLA40IM800PC-TUB DLA40IM800PC.pdf
DLA40IM800PC-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 800V 40A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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IXTF6N200P3 DS100716(IXTF6N200P3).pdf
Hersteller: IXYS
Description: MOSFET N-CH
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IXTF2N300P3 DS100712(IXTF2N300P3).pdf
Hersteller: IXYS
Description: MOSFET N-CH
auf Bestellung 2550 Stücke:
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IXFR20N80Q
Hersteller: IXYS
Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Produkt ist nicht verfügbar
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IXFX20N80Q
IXFX20N80Q
Hersteller: IXYS
Description: MOSFET N-CH 800V 20A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
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IXYP24N100C4 media?resourcetype=datasheets&itemid=9e764d41-4809-4a1d-9928-1cb6ca6c9107&filename=littelfuse_discrete_igbts_xpt_ixy_24n100c4_datasheet.pdf
IXYP24N100C4
Hersteller: IXYS
Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/147ns
Switching Energy: 3.6mJ (on), 1mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 132 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXFN24N100F description
IXFN24N100F
Hersteller: IXYS
Description: MOSFET N-CH 1000V 24A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX24N100F
IXFX24N100F
Hersteller: IXYS
Description: MOSFET N-CH 1000V 24A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY08N100P-TRL
Hersteller: IXYS
Description: IXTY08N100P TRL
Produkt ist nicht verfügbar
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IXYH75N65C3H1 littelfuse-discrete-igbts-ixyh75n65c3h1-datasheet?assetguid=224dfb65-7587-4f7c-8b16-0c4c9033fed6
IXYH75N65C3H1
Hersteller: IXYS
Description: IGBT PT 650V 170A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
auf Bestellung 1380 Stücke:
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Anzahl Preis
1+25.64 EUR
30+15.9 EUR
120+13.88 EUR
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IXYH75N65C3 media?resourcetype=datasheets&itemid=880AF1F0-BCE9-40BF-B617-AC7060048A7A&filename=Littelfuse-Discrete-IGBTs-XPT-IXYH75N65C3-Datasheet.PDF
IXYH75N65C3
Hersteller: IXYS
Description: IGBT PT 650V 170A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
Produkt ist nicht verfügbar
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IXYH50N65C3D1 media?resourcetype=datasheets&itemid=834EE2EA-9CEA-402F-8D05-EFCC34AF555B&filename=Littelfuse-Discrete-IGBTs-XPT-IXYH50N65C3D1-Datasheet.PDF
IXYH50N65C3D1
Hersteller: IXYS
Description: IGBT 650V 132A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 800µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
Produkt ist nicht verfügbar
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IXFN27N120SK
Hersteller: IXYS
Description: SICARBIDE-DISCRETE MOSFET SOT-22
Produkt ist nicht verfügbar
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MIXA80W1200PTEH
Hersteller: IXYS
Description: IGBT MODULE SIXPACK E3-PACK-PF
Produkt ist nicht verfügbar
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IXFY30N25X3 littelfuse-discrete-mosfets-ixf-30n25x3-datasheet?assetguid=f98c5907-f43b-4415-a418-45a0a7855e6d
IXFY30N25X3
Hersteller: IXYS
Description: MOSFET N-CH 250V 30A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 6203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.95 EUR
70+6.21 EUR
140+5.72 EUR
560+5.09 EUR
Mindestbestellmenge: 2
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IXTQ36P15P littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86
IXTQ36P15P
Hersteller: IXYS
Description: MOSFET P-CH 150V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 895 Stücke:
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Anzahl Preis
2+12.99 EUR
30+7.1 EUR
120+6.4 EUR
510+5.7 EUR
Mindestbestellmenge: 2
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IXFP14N55X2
Hersteller: IXYS
Description: IXFP14N55X2
Packaging: Tube
Produkt ist nicht verfügbar
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IXFP14N55X2M
Hersteller: IXYS
Description: IXFP14N55X2M
Packaging: Tube
Produkt ist nicht verfügbar
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IXFK21N100F DS98880A(IXFK-FX21N100F).pdf
IXFK21N100F
Hersteller: IXYS
Description: MOSFET N-CH 1000V 21A TO264
Produkt ist nicht verfügbar
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IXTM1630
Hersteller: IXYS
Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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N4845EE320 media?resourcetype=datasheets&itemid=A38836A5-5E37-4579-BBBB-5CC2031DEE94&filename=Littelfuse-Discrete-Thyristors-Phase-Control-N4845EE3-0-Datasheet.PDF
N4845EE320
Hersteller: IXYS
Description: SCR 3.2KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50Hz
Current - On State (It (AV)) (Max): 4845 A
Supplier Device Package: W108
Voltage - Off State: 3.2 kV
Produkt ist nicht verfügbar
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IXYT55N120A4HV 014125.pdf
IXYT55N120A4HV
Hersteller: IXYS
Description: IGBT PT 1200V 175A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.54 EUR
30+13.15 EUR
120+11.31 EUR
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IXYH55N120A4 littelfuse-discrete-igbts-xpt-ixyh55n120a4-datasheet?assetguid=7cc37be0-870e-4788-8cf1-9672fa37c982
IXYH55N120A4
Hersteller: IXYS
Description: IGBT PT 1200V 175A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
auf Bestellung 563 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.62 EUR
30+10.56 EUR
120+9.02 EUR
510+8.52 EUR
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IXYH85N120A4 littelfuse-discrete-igbts-xpt-ixyh85n120a4-datasheet?assetguid=f5249e62-6772-4617-a066-4441b1dbab32
IXYH85N120A4
Hersteller: IXYS
Description: IGBT PT 1200V 300A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.08 EUR
30+18.19 EUR
120+16.22 EUR
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IXTY48P05T-TRL littelfusediscretemosfetspchannelixt48p05td.pdf
IXTY48P05T-TRL
Hersteller: IXYS
Description: MOSFET P-CH 50V 48A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA48P05T-TRL littelfuse-discrete-mosfets-ixt-4n80p-datasheet?assetguid=595aff53-2a35-43a0-b191-4cbac9044a16
IXTA48P05T-TRL
Hersteller: IXYS
Description: MOSFET P-CH 50V 48A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Produkt ist nicht verfügbar
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IXYK140N120A4 IXYK140N120A4_DS.pdf
IXYK140N120A4
Hersteller: IXYS
Description: IGBT PT 1200V 480A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+65.33 EUR
25+45.22 EUR
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IXYX140N120A4 IXYX140N120A4_DS.pdf
IXYX140N120A4
Hersteller: IXYS
Description: IGBT PT 1200V 480A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+69.33 EUR
30+48.4 EUR
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IXYN140N120A4 littelfuse-discrete-igbts-xpt-ixyn140n120a4-datasheet?assetguid=13a5ea28-9028-4ba7-bc80-764d7c886511
IXYN140N120A4
Hersteller: IXYS
Description: IGBT MODULE 1200V 380A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1070 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+80.08 EUR
10+60.82 EUR
100+58.1 EUR
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IXTA3N110-TRL
IXTA3N110-TRL
Hersteller: IXYS
Description: IXTA3N110 TRL
Produkt ist nicht verfügbar
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