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DPG30C300PC-TRL DPG30C300PC-TRL IXYS Littelfuse-Power-Semiconductors-DPG30C300PC-Datasheet?assetguid=A6D00945-3547-4C51-A033-F4148B459A51 Description: DIODE ARRAY GP 300V 15A TO-263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Produkt ist nicht verfügbar
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DPG30C300PC-TUB DPG30C300PC-TUB IXYS Description: DIODE ARRAY GP 300V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Produkt ist nicht verfügbar
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LSIC2SD120N40PA LSIC2SD120N40PA IXYS littelfuse-power-semiconductors-lsic2sd120n40pa-series-datasheet?assetguid=aa1f0fd4-53ef-4907-b3b6-d4310e1c03ce Description: DIODE MOD SIC 1200V 42A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 42A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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IXBH14N300HV IXYS media?resourcetype=datasheets&amp;itemid=6643a0d7-67d9-4a4e-8987-b0703e2c517c&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_14n300hv_datasheet.pdf Description: DISC IGBT BIMSFT VERYHIVOLT TO-2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A
Supplier Device Package: TO-247HV (IXBH)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXYN100N65B3D1 IXYN100N65B3D1 IXYS Description: IGBT MOD 650V 185A 600W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 185 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.74 nF @ 25 V
Produkt ist nicht verfügbar
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IXGM40N60AL IXYS Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
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IXYP30N120B4 IXYS Description: IGBT DISCRETE TO-220
Packaging: Tube
Part Status: Active
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IXYP30N120C4 IXYS Description: IGBT DISCRETE TO-220
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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IXYP30N120A4 IXYP30N120A4 IXYS littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4 Description: IGBT 1200V 106A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
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IXYA30N120A3HV IXYS Description: IGBT DISCRETE TO-263HV
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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IXGH30N120B3 IXYS littelfuse-discrete-igbts-ixg-30n120b3-datasheet?assetguid=cb0c0eda-e177-4166-a05f-e0899ba5bd64 Description: IGBT PT 1200V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
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IXBA14N300HV IXBA14N300HV IXYS Description: IGBT NPT 3000V 38A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A
Supplier Device Package: TO-263
IGBT Type: NPT
Td (on/off) @ 25°C: 40ns/166ns
Test Condition: 960V, 14A, 20Ohm, 15V
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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W2054NC450 IXYS Description: DIODE STANDARD 4500V 2055A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2055A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
Produkt ist nicht verfügbar
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M1104NC450 IXYS Description: DIODE STANDARD 4500V 1104A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 µs
Technology: Standard
Current - Average Rectified (Io): 1104A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
Produkt ist nicht verfügbar
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GWM100-01X1-SLSAM IXYS GWM100-01X1.pdf Description: MOSFET 6N-CH 100V 90A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS-DIL™
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GWM120-0075X1-SLSAM IXYS GWM120-0075X1.pdf Description: MOSFET 6N-CH 75V 110A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
Produkt ist nicht verfügbar
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GWM160-0055X1-SLSAM IXYS GWM160-0055X1.pdf Description: MOSFET 6N-CH 55V 150A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
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GWM220-004P3-SL SAM IXYS GWM220-004P3.pdf Description: MOSFET 6N-CH 40V 180A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Produkt ist nicht verfügbar
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MEE95-06DA MEE95-06DA IXYS MEA95-06DA_MEK95-06DA_MEE95-06DA.pdf Description: DIODE MODULE 600V 95A TO240AA
auf Bestellung 36 Stücke:
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MEK75-12DA MEK75-12DA IXYS MEA-MEK-MEE_75-12DA.PDF Description: DIODE MOD GP 1200V 75A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
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MEE75-12DA MEE75-12DA IXYS MEA-MEK-MEE_75-12DA.PDF Description: DIODE MOD GP 1200V 75A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
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CLA60MT1200NTZ-TRL IXYS Description: THYRISTOR - TO268AA
Produkt ist nicht verfügbar
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IXTF1N250 IXYS media?resourcetype=datasheets&amp;itemid=d862da0b-11e1-49fe-a32a-4515921a64e4&amp;filename=littelfuse_discrete_mosfets_n-channel_standard_ixtf1n250_datasheet.pdf Description: MOSFET N-CH 2500V 1A ISOPLUS I4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 110W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Produkt ist nicht verfügbar
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DSP45-12AZ-TRL DSP45-12AZ-TRL IXYS littelfuse-power-semiconductors-dsp45-12az-datasheet?assetguid=349b9449-ba5f-4e77-88ae-4ec5807e9b7b Description: DIODE ARRAY GP 1200V 45A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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Mindestbestellmenge: 400
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DSP45-18A DSP45-18A IXYS Littelfuse-Power-Semiconductors-DSP45-18A-Datasheet?assetguid=91090e86-fca9-4436-8c3a-e9be97a70b50 Description: DIODE STANDARD 1800V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-247 (IXTH)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
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IXYX50N170C IXYX50N170C IXYS littelfuse-discrete-igbts-ixyx50n170c-datasheet?assetguid=07d284af-ff38-43e9-9dc7-89f24c802f28 Description: IGBT 1700V 178A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 8.7mJ (on), 5.6mJ (off)
Test Condition: 850V, 50A, 1Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 178 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 1500 W
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W5715ED600 IXYS Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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IXFY8N65X2 IXFY8N65X2 IXYS littelfuse-discrete-mosfets-ixf-8n65x2-datasheet?assetguid=aba0f080-6f89-458e-871e-e69e2a873fc7 Description: MOSFET N-CH 650V 8A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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IX6610T IX6610T IXYS IX6610_R00A.pdf Description: IC MOSF DRIVER
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IXTM6N90A IXYS 91543.pdf Description: MOSFET N-CH 900V 6A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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IXFT54N65X3HV IXYS Description: DISCRETE MOSFET 54A 650V X3 TO26
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IXGH4N250C IXGH4N250C IXYS DS100320(IXGH-GT4N250C).pdf Description: IGBT 2500V 13A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: -/350ns
Switching Energy: 360µJ (off)
Test Condition: 1250V, 4A, 20Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 46 A
Power - Max: 150 W
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IXYH8N250C IXYS DS100789A(IXYH8N250C)_.pdf Description: IGBT 2500V 29A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
Produkt ist nicht verfügbar
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DSS10-01AS-TRL DSS10-01AS-TRL IXYS DSS10-01AS_2021.pdf Description: DIODE SCHOTTKY 100V 10A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Produkt ist nicht verfügbar
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MDD72-18N1B MDD72-18N1B IXYS MDD72-18N1B.pdf Description: DIODE MOD GP 1800V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1800 V
Produkt ist nicht verfügbar
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IXGM17N100A IXYS littelfuse_discrete_igbts_pt_ixgh17n100_datasheet.pdf.pdf Description: IGBT 1000V 34A 150W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IXBOD2-17R IXYS Description: POWER DIODE DISC-OTHERS FP-CASE
Packaging: Tube
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - On State: 1.3 V
Supplier Device Package: FP-Case
Produkt ist nicht verfügbar
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DHG10IM1800UZ-TUB IXYS Description: SONIC-1800V-10A- DPAK-HV-TUBE
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DHG10IM1800UZ-TRL IXYS Description: SONIC-1800V-10A- DPAK-HV-REEL
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W1980JK180 IXYS Description: DIODE GEN PURP 1.8KV 1980A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1980A
Supplier Device Package: W113
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Produkt ist nicht verfügbar
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IXFA30N25X3 IXFA30N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_30n25x3_datasheet.pdf.pdf Description: MOSFET N-CHANNEL 250V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 640 Stücke:
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IXYP15N65B3D1 IXYS Description: IGBT TO220AB
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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DMA80IM1600HB DMA80IM1600HB IXYS DMA80IM1600HB.pdf Description: PWR DIODE RECT 80A 1600V TO-247
auf Bestellung 4 Stücke:
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N0910LC260 IXYS media?resourcetype=datasheets&itemid=aa249cdc-6382-4a83-aed0-009d552ad579&filename=littelfuse-discrete-thyristors-phase-control-n0910lc2-0-datasheet Description: SCR 2.6KV 1788A W10
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10100A @ 50Hz
Current - On State (It (AV)) (Max): 910 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.07 V
Current - Off State (Max): 60 mA
Supplier Device Package: W10
Current - On State (It (RMS)) (Max): 1788 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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N1174JK220 IXYS littelfusediscretethyristorsphasecontroln1174jk20datasheetpdf.pdf Description: SCR 2.2KV 2313A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - On State (It (AV)) (Max): 1174 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.46 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2313 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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IX4310N IXYS Description: HIGH SPEED LOW-SIDE DRIVER 2A 8L
Produkt ist nicht verfügbar
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IX4310NTR IXYS Description: HIGH SPEED LOW-SIDE DRIVER 2A 8L
Produkt ist nicht verfügbar
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N5320FE450 IXYS Description: SCR 4.5KV W119
Produkt ist nicht verfügbar
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N5320FE420 IXYS Description: SCR 4.2KV W119
Produkt ist nicht verfügbar
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IXFY26N30X3 IXFY26N30X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_26n30x3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 26A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
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100+6.06 EUR
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MDD26-14N1B MDD26-14N1B IXYS MDD26-14N1B.pdf Description: DIODE MODULE 1.4KV 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
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1+47.15 EUR
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IXYP20N120A4 IXYP20N120A4 IXYS littelfuse-discrete-igbts-ixy-20n120a4-datasheet?assetguid=b40a9e42-70b2-4715-a4d2-5a93d0449e25 Description: IGBT PT 1200V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXYA20N120C3HV-TRL IXYA20N120C3HV-TRL IXYS DS100484BIXYHPA20N120C3HV.pdf Description: IGBT 1200V 40A TO-263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
Produkt ist nicht verfügbar
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IXYP20N120C4 IXYP20N120C4 IXYS littelfuse-discrete-igbts-ixy-20n120c4-datasheet?assetguid=3c16feb5-2ff7-4546-a254-e439f5e43f0d Description: IGBT 1200V 68A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXGM40N60 IXYS Description: IGBT 600V 75A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 250 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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N0530YN250 IXYS Description: SCR 2.5KV 1040A W91
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Current - On State (It (AV)) (Max): 530 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3.5 V
Current - Off State (Max): 70 mA
Supplier Device Package: W91
Current - On State (It (RMS)) (Max): 1040 A
Voltage - Off State: 2.5 kV
Produkt ist nicht verfügbar
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N1075LN180 IXYS Description: SCR 1.8KV 2415A
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IXYP20N120B4 IXYP20N120B4 IXYS littelfuse-discrete-igbts-ixy-20n120b4-datasheet?assetguid=aeb4cb01-5ee7-4115-97e3-a99b8c505c4e Description: IGBT 1200V 76A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
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IXXH30N60C3 IXYS littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5 Description: IGBT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
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IXTA90N075T2-TRL IXTA90N075T2-TRL IXYS Description: MOSFET N-CH 75V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
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DPG30C300PC-TRL Littelfuse-Power-Semiconductors-DPG30C300PC-Datasheet?assetguid=A6D00945-3547-4C51-A033-F4148B459A51
DPG30C300PC-TRL
Hersteller: IXYS
Description: DIODE ARRAY GP 300V 15A TO-263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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DPG30C300PC-TUB
DPG30C300PC-TUB
Hersteller: IXYS
Description: DIODE ARRAY GP 300V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Produkt ist nicht verfügbar
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LSIC2SD120N40PA littelfuse-power-semiconductors-lsic2sd120n40pa-series-datasheet?assetguid=aa1f0fd4-53ef-4907-b3b6-d4310e1c03ce
LSIC2SD120N40PA
Hersteller: IXYS
Description: DIODE MOD SIC 1200V 42A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 42A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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Anzahl Preis
1+34.43 EUR
10+24.83 EUR
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IXBH14N300HV media?resourcetype=datasheets&amp;itemid=6643a0d7-67d9-4a4e-8987-b0703e2c517c&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_14n300hv_datasheet.pdf
Hersteller: IXYS
Description: DISC IGBT BIMSFT VERYHIVOLT TO-2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A
Supplier Device Package: TO-247HV (IXBH)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXYN100N65B3D1
IXYN100N65B3D1
Hersteller: IXYS
Description: IGBT MOD 650V 185A 600W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 185 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.74 nF @ 25 V
Produkt ist nicht verfügbar
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IXGM40N60AL
Hersteller: IXYS
Description: POWER MOSFET TO-3
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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IXYP30N120B4
Hersteller: IXYS
Description: IGBT DISCRETE TO-220
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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IXYP30N120C4
Hersteller: IXYS
Description: IGBT DISCRETE TO-220
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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IXYP30N120A4 littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4
IXYP30N120A4
Hersteller: IXYS
Description: IGBT 1200V 106A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
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IXYA30N120A3HV
Hersteller: IXYS
Description: IGBT DISCRETE TO-263HV
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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IXGH30N120B3 littelfuse-discrete-igbts-ixg-30n120b3-datasheet?assetguid=cb0c0eda-e177-4166-a05f-e0899ba5bd64
Hersteller: IXYS
Description: IGBT PT 1200V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXBA14N300HV
IXBA14N300HV
Hersteller: IXYS
Description: IGBT NPT 3000V 38A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A
Supplier Device Package: TO-263
IGBT Type: NPT
Td (on/off) @ 25°C: 40ns/166ns
Test Condition: 960V, 14A, 20Ohm, 15V
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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W2054NC450
Hersteller: IXYS
Description: DIODE STANDARD 4500V 2055A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2055A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
Produkt ist nicht verfügbar
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M1104NC450
Hersteller: IXYS
Description: DIODE STANDARD 4500V 1104A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 µs
Technology: Standard
Current - Average Rectified (Io): 1104A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 1500 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
Produkt ist nicht verfügbar
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GWM100-01X1-SLSAM GWM100-01X1.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 100V 90A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 90A
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS-DIL™
Produkt ist nicht verfügbar
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GWM120-0075X1-SLSAM GWM120-0075X1.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 75V 110A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
Produkt ist nicht verfügbar
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GWM160-0055X1-SLSAM GWM160-0055X1.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 55V 150A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Produkt ist nicht verfügbar
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GWM220-004P3-SL SAM GWM220-004P3.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 40V 180A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 180A
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Produkt ist nicht verfügbar
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MEE95-06DA MEA95-06DA_MEK95-06DA_MEE95-06DA.pdf
MEE95-06DA
Hersteller: IXYS
Description: DIODE MODULE 600V 95A TO240AA
auf Bestellung 36 Stücke:
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Anzahl Preis
1+56.14 EUR
10+51.78 EUR
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MEK75-12DA MEA-MEK-MEE_75-12DA.PDF
MEK75-12DA
Hersteller: IXYS
Description: DIODE MOD GP 1200V 75A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
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Anzahl Preis
1+50.28 EUR
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MEE75-12DA MEA-MEK-MEE_75-12DA.PDF
MEE75-12DA
Hersteller: IXYS
Description: DIODE MOD GP 1200V 75A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
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Anzahl Preis
1+50.86 EUR
36+32.93 EUR
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CLA60MT1200NTZ-TRL
Hersteller: IXYS
Description: THYRISTOR - TO268AA
Produkt ist nicht verfügbar
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IXTF1N250 media?resourcetype=datasheets&amp;itemid=d862da0b-11e1-49fe-a32a-4515921a64e4&amp;filename=littelfuse_discrete_mosfets_n-channel_standard_ixtf1n250_datasheet.pdf
Hersteller: IXYS
Description: MOSFET N-CH 2500V 1A ISOPLUS I4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 110W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Produkt ist nicht verfügbar
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DSP45-12AZ-TRL littelfuse-power-semiconductors-dsp45-12az-datasheet?assetguid=349b9449-ba5f-4e77-88ae-4ec5807e9b7b
DSP45-12AZ-TRL
Hersteller: IXYS
Description: DIODE ARRAY GP 1200V 45A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
auf Bestellung 1200 Stücke:
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Anzahl Preis
400+5.94 EUR
Mindestbestellmenge: 400
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DSP45-18A Littelfuse-Power-Semiconductors-DSP45-18A-Datasheet?assetguid=91090e86-fca9-4436-8c3a-e9be97a70b50
DSP45-18A
Hersteller: IXYS
Description: DIODE STANDARD 1800V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-247 (IXTH)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
auf Bestellung 5741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.6 EUR
30+6.17 EUR
120+5.4 EUR
Mindestbestellmenge: 2
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IXYX50N170C littelfuse-discrete-igbts-ixyx50n170c-datasheet?assetguid=07d284af-ff38-43e9-9dc7-89f24c802f28
IXYX50N170C
Hersteller: IXYS
Description: IGBT 1700V 178A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 8.7mJ (on), 5.6mJ (off)
Test Condition: 850V, 50A, 1Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 178 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 1500 W
auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.43 EUR
30+26.51 EUR
120+24.76 EUR
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W5715ED600
Hersteller: IXYS
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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IXFY8N65X2 littelfuse-discrete-mosfets-ixf-8n65x2-datasheet?assetguid=aba0f080-6f89-458e-871e-e69e2a873fc7
IXFY8N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 8A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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IX6610T IX6610_R00A.pdf
IX6610T
Hersteller: IXYS
Description: IC MOSF DRIVER
Produkt ist nicht verfügbar
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IXTM6N90A 91543.pdf
Hersteller: IXYS
Description: MOSFET N-CH 900V 6A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT54N65X3HV
Hersteller: IXYS
Description: DISCRETE MOSFET 54A 650V X3 TO26
Produkt ist nicht verfügbar
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IXGH4N250C DS100320(IXGH-GT4N250C).pdf
IXGH4N250C
Hersteller: IXYS
Description: IGBT 2500V 13A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: -/350ns
Switching Energy: 360µJ (off)
Test Condition: 1250V, 4A, 20Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 46 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IXYH8N250C DS100789A(IXYH8N250C)_.pdf
Hersteller: IXYS
Description: IGBT 2500V 29A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
Produkt ist nicht verfügbar
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DSS10-01AS-TRL DSS10-01AS_2021.pdf
DSS10-01AS-TRL
Hersteller: IXYS
Description: DIODE SCHOTTKY 100V 10A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
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MDD72-18N1B MDD72-18N1B.pdf
MDD72-18N1B
Hersteller: IXYS
Description: DIODE MOD GP 1800V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1800 V
Produkt ist nicht verfügbar
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IXGM17N100A littelfuse_discrete_igbts_pt_ixgh17n100_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT 1000V 34A 150W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IXBOD2-17R
Hersteller: IXYS
Description: POWER DIODE DISC-OTHERS FP-CASE
Packaging: Tube
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - On State: 1.3 V
Supplier Device Package: FP-Case
Produkt ist nicht verfügbar
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DHG10IM1800UZ-TUB
Hersteller: IXYS
Description: SONIC-1800V-10A- DPAK-HV-TUBE
auf Bestellung 770 Stücke:
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DHG10IM1800UZ-TRL
Hersteller: IXYS
Description: SONIC-1800V-10A- DPAK-HV-REEL
auf Bestellung 5000 Stücke:
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W1980JK180
Hersteller: IXYS
Description: DIODE GEN PURP 1.8KV 1980A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1980A
Supplier Device Package: W113
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Produkt ist nicht verfügbar
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IXFA30N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_30n25x3_datasheet.pdf.pdf
IXFA30N25X3
Hersteller: IXYS
Description: MOSFET N-CHANNEL 250V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.57 EUR
10+11.36 EUR
100+9.4 EUR
500+8.19 EUR
Mindestbestellmenge: 2
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IXYP15N65B3D1
Hersteller: IXYS
Description: IGBT TO220AB
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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DMA80IM1600HB DMA80IM1600HB.pdf
DMA80IM1600HB
Hersteller: IXYS
Description: PWR DIODE RECT 80A 1600V TO-247
auf Bestellung 4 Stücke:
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N0910LC260 media?resourcetype=datasheets&itemid=aa249cdc-6382-4a83-aed0-009d552ad579&filename=littelfuse-discrete-thyristors-phase-control-n0910lc2-0-datasheet
Hersteller: IXYS
Description: SCR 2.6KV 1788A W10
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10100A @ 50Hz
Current - On State (It (AV)) (Max): 910 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.07 V
Current - Off State (Max): 60 mA
Supplier Device Package: W10
Current - On State (It (RMS)) (Max): 1788 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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N1174JK220 littelfusediscretethyristorsphasecontroln1174jk20datasheetpdf.pdf
Hersteller: IXYS
Description: SCR 2.2KV 2313A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - On State (It (AV)) (Max): 1174 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.46 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2313 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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IX4310N
Hersteller: IXYS
Description: HIGH SPEED LOW-SIDE DRIVER 2A 8L
Produkt ist nicht verfügbar
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IX4310NTR
Hersteller: IXYS
Description: HIGH SPEED LOW-SIDE DRIVER 2A 8L
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N5320FE450
Hersteller: IXYS
Description: SCR 4.5KV W119
Produkt ist nicht verfügbar
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N5320FE420
Hersteller: IXYS
Description: SCR 4.2KV W119
Produkt ist nicht verfügbar
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IXFY26N30X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_26n30x3_datasheet.pdf.pdf
IXFY26N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 26A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.24 EUR
10+7.4 EUR
100+6.06 EUR
Mindestbestellmenge: 3
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MDD26-14N1B MDD26-14N1B.pdf
MDD26-14N1B
Hersteller: IXYS
Description: DIODE MODULE 1.4KV 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
auf Bestellung 25 Stücke:
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Anzahl Preis
1+47.15 EUR
10+43.49 EUR
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IXYP20N120A4 littelfuse-discrete-igbts-ixy-20n120a4-datasheet?assetguid=b40a9e42-70b2-4715-a4d2-5a93d0449e25
IXYP20N120A4
Hersteller: IXYS
Description: IGBT PT 1200V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
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IXYA20N120C3HV-TRL DS100484BIXYHPA20N120C3HV.pdf
IXYA20N120C3HV-TRL
Hersteller: IXYS
Description: IGBT 1200V 40A TO-263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
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IXYP20N120C4 littelfuse-discrete-igbts-ixy-20n120c4-datasheet?assetguid=3c16feb5-2ff7-4546-a254-e439f5e43f0d
IXYP20N120C4
Hersteller: IXYS
Description: IGBT 1200V 68A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXGM40N60
Hersteller: IXYS
Description: IGBT 600V 75A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 250 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
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N0530YN250
Hersteller: IXYS
Description: SCR 2.5KV 1040A W91
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Current - On State (It (AV)) (Max): 530 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3.5 V
Current - Off State (Max): 70 mA
Supplier Device Package: W91
Current - On State (It (RMS)) (Max): 1040 A
Voltage - Off State: 2.5 kV
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N1075LN180
Hersteller: IXYS
Description: SCR 1.8KV 2415A
auf Bestellung 6 Stücke:
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IXYP20N120B4 littelfuse-discrete-igbts-ixy-20n120b4-datasheet?assetguid=aeb4cb01-5ee7-4115-97e3-a99b8c505c4e
IXYP20N120B4
Hersteller: IXYS
Description: IGBT 1200V 76A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
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IXXH30N60C3 littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5
Hersteller: IXYS
Description: IGBT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
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IXTA90N075T2-TRL
IXTA90N075T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 75V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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