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IXYK110N120A4 IXYK110N120A4 IXYS Description: IGBT PT 1200V 375A TO-264
IGBT Type: PT
Supplier Device Package: TO-264 (IXYK)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 1360 W
Current - Collector Pulsed (Icm): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 375 A
Part Status: Active
Gate Charge: 305 nC
Test Condition: 600V, 50A, 1.5Ohm, 15V
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Td (on/off) @ 25°C: 42ns/550ns
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IXYN110N120A4 IXYN110N120A4 IXYS IXYN110N120A4_DS.pdf Description: IGBT PT 1200V 275A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
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IXFA20N85XHV-TRL IXFA20N85XHV-TRL IXYS Description: MOSFET N-CH 850V 20A TO263HV
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IXFJ20N85X IXFJ20N85X IXYS DS100772A(IXFJ20N85X).pdf Description: MOSFET N-CH 850V 9.5A ISO TO247
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IXFN170N65X2 IXFN170N65X2 IXYS littelfuse-discrete-mosfets-ixfn170n65x2-datasheet?assetguid=2a189d3c-4251-4340-a4a2-11dcae55c724 Description: MOSFET N-CH 650V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V
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IXFN400N15X3 IXFN400N15X3 IXYS littelfuse-discrete-mosfets-ixfn400n15x3-datasheet?assetguid=e5c6a43f-5a1c-4da5-a5aa-a1af5947d874 Description: MOSFET N-CH 150V 400A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
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N6012ZD020 IXYS media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf Description: SCR 200V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 200 V
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MCB40P1200LB-TUB IXYS media?resourcetype=datasheets&itemid=342f592b-5d45-4a74-859b-9516f656d799&filename=littelfuse-power-semiconductors-mcb40p1200lb-datasheet Description: POWER MOSFET
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Surface Mount
Package / Case: 9-SMD Power Module
Packaging: Tube
Part Status: Active
Supplier Device Package: SMPD
Current - Continuous Drain (Id) @ 25°C: 58A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
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IXFP36N20X3M IXFP36N20X3M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n20x3m_datasheet.pdf.pdf Description: MOSFET N-CH 200V 36A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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IXYH8N250CHV IXYH8N250CHV IXYS littelfuse-discrete-igbts-ixy-8n250chv-datasheet?assetguid=78ea8f5b-1880-4f0f-b0fa-520bc5357c4b Description: IGBT 2500V 29A TO-247HV
Power - Max: 280 W
Current - Collector Pulsed (Icm): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 29 A
Part Status: Active
Gate Charge: 45 nC
Test Condition: 1250V, 8A, 15Ohm, 15V
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Td (on/off) @ 25°C: 11ns/180ns
Supplier Device Package: TO-247HV
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Reverse Recovery Time (trr): 5 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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N2543ZD240 IXYS Description: SCR 2.4KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 2.4 kV
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IXXX200N60B3 IXXX200N60B3 IXYS littelfuse-discrete-igbts-ixx-200n60b3-datasheet?assetguid=ab8f4978-25e6-40df-9e1a-1d06b1455e31 Description: IGBT 600V 380A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 4.4mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
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IXYT85N120A4HV IXYT85N120A4HV IXYS Description: IGBT PT 1200V 300A TO-268HV
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 300 A
Part Status: Active
Gate Charge: 200 nC
Test Condition: 600V, 60A, 5Ohm, 15V
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Td (on/off) @ 25°C: 40ns/400ns
IGBT Type: PT
Supplier Device Package: TO-268HV (IXYT)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Reverse Recovery Time (trr): 40 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 520 A
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LSIC2SD120N120PA LSIC2SD120N120PA IXYS LSIC2SD120N120PA.PDF Description: DIODE MODULE SIC 1200V 120A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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DSEC29-02AS-TUB DSEC29-02AS-TUB IXYS DSEC29-02AS.pdf Description: DIODE ARRAY GP 200V 15A TO263
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CLB30I1200HB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLB30I1200HB.pdf Description: SCR 1.2KV 47A TO247
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IXGT6N170-TRL IXYS Description: IXGT6N170 TRL
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IXGT6N170AHV-TRL IXYS Description: IXGT6N170AHV TRL
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IXGT6N170A-TRL IXYS Description: IXGT6N170A TRL
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IXFA44N25X3 IXFA44N25X3 IXYS media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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IXFP44N25X3 IXFP44N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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IXTH44N25L2 IXYS media?resourcetype=datasheets&itemid=04e8b47d-2398-4a0b-bd4f-d92d25c9b38c&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_44n25l2_datasheet.pdf Description: MOSFET N-CH 250V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V
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R1158NC26P IXYS Description: SCR 2.6KV 2328A W11
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CLA100E1200TZ-TUB CLA100E1200TZ-TUB IXYS Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet?assetguid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4 Description: SCR 1.2KV 160A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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IXGK120N60B3 IXYS littelfuse_discrete_igbts_pt_ixg_120n60b3_datasheet?assetguid=360c665e-d7b3-4ccb-ba05-1f3b3a839463 Description: IGBT PT 600V 280A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
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LSIC2SD120N80PA LSIC2SD120N80PA IXYS littelfuse-power-semiconductors-lsic2sd120n80pa-series-datasheet?assetguid=c1153406-f42d-4f53-bda5-00181628278f Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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IXFK14N100Q IXYS Description: MOSFET N-CH 1000V 14A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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DSEK300-06A DSEK300-06A IXYS littelfuse-power-semiconductors-dsek300-06a-datasheet?assetguid=1c3e2386-7e3d-42ec-9d6b-41501918dda4 Description: DIODE MOD GP 600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 150 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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N2055MC260 IXYS littelfusediscretethyristorsphasecontroln2055mc20datasheetpdf.pdf Description: SCR 2.6KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.6 kV
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N2055MC280 IXYS littelfusediscretethyristorsphasecontroln2055mc20datasheetpdf.pdf Description: SCR 2.8KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.8 kV
Produkt ist nicht verfügbar
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IXFN130N90SK IXFN130N90SK IXYS Description: SICARBIDE-DISCRETE MOSFET SOT-22
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M1494NK250 IXYS Description: FAST DIODE
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DSEP30-12B DSEP30-12B IXYS media?resourcetype=datasheets&itemid=5be1dfe3-9c2a-4a98-8d2f-e25f24a9a483&filename=littelfuse%2520power%2520semiconductors%2520dsep30-12b%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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MCB60I1200TZ IXYS media?resourcetype=datasheets&itemid=f8cb0642-3abb-46b6-94fa-7b975f84c651&filename=mcb60i1200tz-1623296 Description: 1200V 90A SIC POWER MOSFET
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
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N1366JK120 IXYS media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf Description: SCR 1.2KV 2718A WP1
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Packaging: Box
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 2718 A
Supplier Device Package: WP1
Current - Off State (Max): 100 mA
Voltage - On State (Vtm) (Max): 1.99 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 1366 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
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N1366JK140 IXYS media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf Description: SCR 1.4KV 2718A WP1
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 2718 A
Supplier Device Package: WP1
Current - Off State (Max): 100 mA
Voltage - On State (Vtm) (Max): 1.99 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 1366 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Packaging: Box
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IXFQ60N25X3 IXFQ60N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_60n25x3_datasheet.pdf.pdf Description: MOSFET N-CHANNEL 250V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
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100+12.59 EUR
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IXGM20N60 IXYS Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
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IXGM25N100A IXYS littelfuse_discrete_igbts_pt_ixgm25n100a_datasheet.pdf.pdf Description: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
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IXTY1N120PTRL IXTY1N120PTRL IXYS Description: MOSFET N-CH 1200V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V
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DSP45-12AZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDSP45-12AZ.pdf Description: DIODE GEN PURP 1.2KV 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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CLA30E1200PB CLA30E1200PB IXYS Littelfuse-Power-Semiconductors-CLA30E1200PB-Datasheet?assetguid=a4d05f17-646e-47d1-8dd8-9de3c784ec65 Description: SCR 1.2KV 47A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.59 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220-3
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
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3+8.4 EUR
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MEK95-06DA MEK95-06DA IXYS Littelfuse-Power-Semiconductors-MEA95-06DA-MEK95-06DA-MEE95-06DA-Datasheet?assetguid=28370ac9-cdbf-432b-9115-f10f0447c92e Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
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N1159NC380 IXYS Description: SCR 3.8KV 2268A W11
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N1159NC420 IXYS Description: SCR 4.2KV 2268A W11
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MEA75-12DA MEA75-12DA IXYS MEA-MEK-MEE_75-12DA.PDF Description: DIODE MOD GP 1.2KV 75A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
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MEK150-04DA MEK150-04DA IXYS Littelfuse-Power-Semiconductors-MEK150-04DA-Datasheet?assetguid=cdfb7df5-7ced-4bec-863c-29b13272ae6f Description: DIODE MOD GP 400V 150A TO-240AA
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Bulk
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MDD44-16N1B MDD44-16N1B IXYS Littelfuse-Power-Semiconductors-MDD44-16N1B-Datasheet?assetguid=472568E2-30F6-4226-80BC-79C3D899C4DC Description: DIODE MOD GP 1600V 64A TO-240AA
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 64A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
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MDMA660U1600PTEH IXYS media?resourcetype=datasheets&itemid=6121d227-b8cc-43e1-b8e1-5fab292cc1a4&filename=littelfuse%2520power%2520semiconductors%2520mdma660u1600pteh%2520datasheet.pdf Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A
Current - Average Rectified (Io): 660 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: E3
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MDMA660U1600PT-PC IXYS Description: MDMA660U1600PTEH-PC
Packaging: Box
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MDMA900U1600PTEH MDMA900U1600PTEH IXYS MDMA900U1600PTEH.pdf Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 900 A
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
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MDMA900U1600PT-PC IXYS Description: MDMA900U1600PTEH-PC
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VVZ24-12IO1 IXYS Description: BRIDGE RECT 3 PHASE 1200V 27A
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DMA40U1800GU DMA40U1800GU IXYS media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf Description: POWER DIODE DISCRETES-RECTIFIER
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Average Rectified (Io): 40 A
Voltage - Peak Reverse (Max): 1.8 kV
Supplier Device Package: GUFP
Technology: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 5-SIP
Packaging: Tube
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DMA90U1800LB-TUB IXYS DMA90U1800LB.pdf Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.8 kV
Supplier Device Package: ISOPLUS-SMPD™.B
Technology: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Diode Type: Three Phase
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Packaging: Tube
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IXGA28N60A3 IXGA28N60A3 IXYS littelfuse_discrete_igbts_pt_ixg_28n60a3_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
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N1718NC180 IXYS Description: SCR 1.8KV 3450A W11
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N1718NC120 IXYS Description: SCR 1.2KV 3450A W11
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MCC95-08I01B MCC95-08I01B IXYS Description: DIODE MOD GP 800V 116A TO240AA
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 800 V
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 116A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Bulk
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IXTA110N12T2 IXTA110N12T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_110n12t2_datasheet.pdf.pdf Description: MOSFET N-CH 120V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
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IXYK110N120A4
IXYK110N120A4
Hersteller: IXYS
Description: IGBT PT 1200V 375A TO-264
IGBT Type: PT
Supplier Device Package: TO-264 (IXYK)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 1360 W
Current - Collector Pulsed (Icm): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 375 A
Part Status: Active
Gate Charge: 305 nC
Test Condition: 600V, 50A, 1.5Ohm, 15V
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Td (on/off) @ 25°C: 42ns/550ns
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IXYN110N120A4 IXYN110N120A4_DS.pdf
IXYN110N120A4
Hersteller: IXYS
Description: IGBT PT 1200V 275A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
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IXFA20N85XHV-TRL
IXFA20N85XHV-TRL
Hersteller: IXYS
Description: MOSFET N-CH 850V 20A TO263HV
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IXFJ20N85X DS100772A(IXFJ20N85X).pdf
IXFJ20N85X
Hersteller: IXYS
Description: MOSFET N-CH 850V 9.5A ISO TO247
Produkt ist nicht verfügbar
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IXFN170N65X2 littelfuse-discrete-mosfets-ixfn170n65x2-datasheet?assetguid=2a189d3c-4251-4340-a4a2-11dcae55c724
IXFN170N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V
auf Bestellung 185 Stücke:
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10+79.04 EUR
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IXFN400N15X3 littelfuse-discrete-mosfets-ixfn400n15x3-datasheet?assetguid=e5c6a43f-5a1c-4da5-a5aa-a1af5947d874
IXFN400N15X3
Hersteller: IXYS
Description: MOSFET N-CH 150V 400A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
auf Bestellung 170 Stücke:
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N6012ZD020 media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf
Hersteller: IXYS
Description: SCR 200V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 200 V
Produkt ist nicht verfügbar
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MCB40P1200LB-TUB media?resourcetype=datasheets&itemid=342f592b-5d45-4a74-859b-9516f656d799&filename=littelfuse-power-semiconductors-mcb40p1200lb-datasheet
Hersteller: IXYS
Description: POWER MOSFET
Configuration: 2 N-Channel (Dual) Common Source
Mounting Type: Surface Mount
Package / Case: 9-SMD Power Module
Packaging: Tube
Part Status: Active
Supplier Device Package: SMPD
Current - Continuous Drain (Id) @ 25°C: 58A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
auf Bestellung 13 Stücke:
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1+475.82 EUR
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IXFP36N20X3M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n20x3m_datasheet.pdf.pdf
IXFP36N20X3M
Hersteller: IXYS
Description: MOSFET N-CH 200V 36A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Produkt ist nicht verfügbar
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IXYH8N250CHV littelfuse-discrete-igbts-ixy-8n250chv-datasheet?assetguid=78ea8f5b-1880-4f0f-b0fa-520bc5357c4b
IXYH8N250CHV
Hersteller: IXYS
Description: IGBT 2500V 29A TO-247HV
Power - Max: 280 W
Current - Collector Pulsed (Icm): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 29 A
Part Status: Active
Gate Charge: 45 nC
Test Condition: 1250V, 8A, 15Ohm, 15V
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Td (on/off) @ 25°C: 11ns/180ns
Supplier Device Package: TO-247HV
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Reverse Recovery Time (trr): 5 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
auf Bestellung 1080 Stücke:
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1+34.95 EUR
30+21.92 EUR
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N2543ZD240
Hersteller: IXYS
Description: SCR 2.4KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 2.4 kV
Produkt ist nicht verfügbar
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IXXX200N60B3 littelfuse-discrete-igbts-ixx-200n60b3-datasheet?assetguid=ab8f4978-25e6-40df-9e1a-1d06b1455e31
IXXX200N60B3
Hersteller: IXYS
Description: IGBT 600V 380A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 4.4mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
auf Bestellung 294 Stücke:
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1+37.07 EUR
30+23.36 EUR
120+21.13 EUR
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IXYT85N120A4HV
IXYT85N120A4HV
Hersteller: IXYS
Description: IGBT PT 1200V 300A TO-268HV
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 300 A
Part Status: Active
Gate Charge: 200 nC
Test Condition: 600V, 60A, 5Ohm, 15V
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Td (on/off) @ 25°C: 40ns/400ns
IGBT Type: PT
Supplier Device Package: TO-268HV (IXYT)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Reverse Recovery Time (trr): 40 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 520 A
auf Bestellung 258 Stücke:
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1+42.19 EUR
30+30.39 EUR
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LSIC2SD120N120PA LSIC2SD120N120PA.PDF
LSIC2SD120N120PA
Hersteller: IXYS
Description: DIODE MODULE SIC 1200V 120A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Current - Average Rectified (Io) (per Diode): 120A (DC)
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
auf Bestellung 86 Stücke:
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1+111.59 EUR
10+85.42 EUR
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DSEC29-02AS-TUB DSEC29-02AS.pdf
DSEC29-02AS-TUB
Hersteller: IXYS
Description: DIODE ARRAY GP 200V 15A TO263
Produkt ist nicht verfügbar
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CLB30I1200HB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLB30I1200HB.pdf
Hersteller: IXYS
Description: SCR 1.2KV 47A TO247
Produkt ist nicht verfügbar
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IXGT6N170-TRL
Hersteller: IXYS
Description: IXGT6N170 TRL
Produkt ist nicht verfügbar
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IXGT6N170AHV-TRL
Hersteller: IXYS
Description: IXGT6N170AHV TRL
Produkt ist nicht verfügbar
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IXGT6N170A-TRL
Hersteller: IXYS
Description: IXGT6N170A TRL
Produkt ist nicht verfügbar
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IXFA44N25X3 media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf
IXFA44N25X3
Hersteller: IXYS
Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1550 Stücke:
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300+7.66 EUR
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IXFP44N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf
IXFP44N25X3
Hersteller: IXYS
Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1550 Stücke:
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AnzahlPrivatkunde
300+9.15 EUR
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IXTH44N25L2 media?resourcetype=datasheets&itemid=04e8b47d-2398-4a0b-bd4f-d92d25c9b38c&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_44n25l2_datasheet.pdf
Hersteller: IXYS
Description: MOSFET N-CH 250V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V
Produkt ist nicht verfügbar
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R1158NC26P
Hersteller: IXYS
Description: SCR 2.6KV 2328A W11
Produkt ist nicht verfügbar
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CLA100E1200TZ-TUB Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet?assetguid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4
CLA100E1200TZ-TUB
Hersteller: IXYS
Description: SCR 1.2KV 160A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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IXGK120N60B3 littelfuse_discrete_igbts_pt_ixg_120n60b3_datasheet?assetguid=360c665e-d7b3-4ccb-ba05-1f3b3a839463
Hersteller: IXYS
Description: IGBT PT 600V 280A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
Produkt ist nicht verfügbar
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LSIC2SD120N80PA littelfuse-power-semiconductors-lsic2sd120n80pa-series-datasheet?assetguid=c1153406-f42d-4f53-bda5-00181628278f
LSIC2SD120N80PA
Hersteller: IXYS
Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 100 Stücke:
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1+93.42 EUR
10+65.75 EUR
100+36.71 EUR
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IXFK14N100Q
Hersteller: IXYS
Description: MOSFET N-CH 1000V 14A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
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DSEK300-06A littelfuse-power-semiconductors-dsek300-06a-datasheet?assetguid=1c3e2386-7e3d-42ec-9d6b-41501918dda4
DSEK300-06A
Hersteller: IXYS
Description: DIODE MOD GP 600V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 150 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
Produkt ist nicht verfügbar
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N2055MC260 littelfusediscretethyristorsphasecontroln2055mc20datasheetpdf.pdf
Hersteller: IXYS
Description: SCR 2.6KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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N2055MC280 littelfusediscretethyristorsphasecontroln2055mc20datasheetpdf.pdf
Hersteller: IXYS
Description: SCR 2.8KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.8 kV
Produkt ist nicht verfügbar
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IXFN130N90SK
IXFN130N90SK
Hersteller: IXYS
Description: SICARBIDE-DISCRETE MOSFET SOT-22
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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M1494NK250
Hersteller: IXYS
Description: FAST DIODE
Produkt ist nicht verfügbar
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DSEP30-12B media?resourcetype=datasheets&itemid=5be1dfe3-9c2a-4a98-8d2f-e25f24a9a483&filename=littelfuse%2520power%2520semiconductors%2520dsep30-12b%2520datasheet.pdf
DSEP30-12B
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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MCB60I1200TZ media?resourcetype=datasheets&itemid=f8cb0642-3abb-46b6-94fa-7b975f84c651&filename=mcb60i1200tz-1623296
Hersteller: IXYS
Description: 1200V 90A SIC POWER MOSFET
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
Produkt ist nicht verfügbar
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N1366JK120 media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf
Hersteller: IXYS
Description: SCR 1.2KV 2718A WP1
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Packaging: Box
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 2718 A
Supplier Device Package: WP1
Current - Off State (Max): 100 mA
Voltage - On State (Vtm) (Max): 1.99 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 1366 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Produkt ist nicht verfügbar
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N1366JK140 media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf
Hersteller: IXYS
Description: SCR 1.4KV 2718A WP1
Voltage - Off State: 1.4 kV
Current - On State (It (RMS)) (Max): 2718 A
Supplier Device Package: WP1
Current - Off State (Max): 100 mA
Voltage - On State (Vtm) (Max): 1.99 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 1366 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Packaging: Box
Produkt ist nicht verfügbar
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IXFQ60N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_60n25x3_datasheet.pdf.pdf
IXFQ60N25X3
Hersteller: IXYS
Description: MOSFET N-CHANNEL 250V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
auf Bestellung 1713 Stücke:
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AnzahlPrivatkunde
2+17.64 EUR
10+15.11 EUR
100+12.59 EUR
500+11.11 EUR
1000+10 EUR
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IXGM20N60
Hersteller: IXYS
Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IXGM25N100A littelfuse_discrete_igbts_pt_ixgm25n100a_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXTY1N120PTRL
IXTY1N120PTRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V
Produkt ist nicht verfügbar
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DSP45-12AZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDSP45-12AZ.pdf
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Produkt ist nicht verfügbar
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CLA30E1200PB Littelfuse-Power-Semiconductors-CLA30E1200PB-Datasheet?assetguid=a4d05f17-646e-47d1-8dd8-9de3c784ec65
CLA30E1200PB
Hersteller: IXYS
Description: SCR 1.2KV 47A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 325A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.59 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220-3
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.2 kV
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.4 EUR
50+4.33 EUR
100+3.94 EUR
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MEK95-06DA Littelfuse-Power-Semiconductors-MEA95-06DA-MEK95-06DA-MEE95-06DA-Datasheet?assetguid=28370ac9-cdbf-432b-9115-f10f0447c92e
MEK95-06DA
Hersteller: IXYS
Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Produkt ist nicht verfügbar
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N1159NC380
Hersteller: IXYS
Description: SCR 3.8KV 2268A W11
Produkt ist nicht verfügbar
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N1159NC420
Hersteller: IXYS
Description: SCR 4.2KV 2268A W11
Produkt ist nicht verfügbar
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MEA75-12DA MEA-MEK-MEE_75-12DA.PDF
MEA75-12DA
Hersteller: IXYS
Description: DIODE MOD GP 1.2KV 75A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
Produkt ist nicht verfügbar
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MEK150-04DA Littelfuse-Power-Semiconductors-MEK150-04DA-Datasheet?assetguid=cdfb7df5-7ced-4bec-863c-29b13272ae6f
MEK150-04DA
Hersteller: IXYS
Description: DIODE MOD GP 400V 150A TO-240AA
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 150A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Bulk
Produkt ist nicht verfügbar
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MDD44-16N1B Littelfuse-Power-Semiconductors-MDD44-16N1B-Datasheet?assetguid=472568E2-30F6-4226-80BC-79C3D899C4DC
MDD44-16N1B
Hersteller: IXYS
Description: DIODE MOD GP 1600V 64A TO-240AA
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 64A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+54.07 EUR
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MDMA660U1600PTEH media?resourcetype=datasheets&itemid=6121d227-b8cc-43e1-b8e1-5fab292cc1a4&filename=littelfuse%2520power%2520semiconductors%2520mdma660u1600pteh%2520datasheet.pdf
Hersteller: IXYS
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase
Mounting Type: Chassis Mount
Package / Case: E3
Packaging: Box
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A
Current - Average Rectified (Io): 660 A
Voltage - Peak Reverse (Max): 1.6 kV
Supplier Device Package: E3
Produkt ist nicht verfügbar
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MDMA660U1600PT-PC
Hersteller: IXYS
Description: MDMA660U1600PTEH-PC
Packaging: Box
Produkt ist nicht verfügbar
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MDMA900U1600PTEH MDMA900U1600PTEH.pdf
MDMA900U1600PTEH
Hersteller: IXYS
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 900 A
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
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MDMA900U1600PT-PC
Hersteller: IXYS
Description: MDMA900U1600PTEH-PC
Produkt ist nicht verfügbar
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VVZ24-12IO1
Hersteller: IXYS
Description: BRIDGE RECT 3 PHASE 1200V 27A
Produkt ist nicht verfügbar
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DMA40U1800GU media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf
DMA40U1800GU
Hersteller: IXYS
Description: POWER DIODE DISCRETES-RECTIFIER
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Average Rectified (Io): 40 A
Voltage - Peak Reverse (Max): 1.8 kV
Supplier Device Package: GUFP
Technology: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 5-SIP
Packaging: Tube
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+38.37 EUR
14+27.56 EUR
112+25.26 EUR
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DMA90U1800LB-TUB DMA90U1800LB.pdf
Hersteller: IXYS
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Average Rectified (Io): 90 A
Voltage - Peak Reverse (Max): 1.8 kV
Supplier Device Package: ISOPLUS-SMPD™.B
Technology: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Diode Type: Three Phase
Mounting Type: Surface Mount
Package / Case: 9-SMD Module
Packaging: Tube
Produkt ist nicht verfügbar
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IXGA28N60A3 littelfuse_discrete_igbts_pt_ixg_28n60a3_datasheet.pdf.pdf
IXGA28N60A3
Hersteller: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 24A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/300ns
Switching Energy: 700µJ (on), 2.4mJ (off)
Test Condition: 480V, 24A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 190 W
Produkt ist nicht verfügbar
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N1718NC180
Hersteller: IXYS
Description: SCR 1.8KV 3450A W11
auf Bestellung 12 Stücke:
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N1718NC120
Hersteller: IXYS
Description: SCR 1.2KV 3450A W11
Produkt ist nicht verfügbar
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MCC95-08I01B
MCC95-08I01B
Hersteller: IXYS
Description: DIODE MOD GP 800V 116A TO240AA
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 800 V
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 116A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Bulk
Produkt ist nicht verfügbar
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IXTA110N12T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_110n12t2_datasheet.pdf.pdf
IXTA110N12T2
Hersteller: IXYS
Description: MOSFET N-CH 120V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
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