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DPG20C400PC-TUB DPG20C400PC-TUB IXYS Description: POWER DIODE DISCRETES-FRED TO-26
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DPG20C400PC-TRL DPG20C400PC-TRL IXYS DPG20C400PC.pdf Description: DIODE ARRAY GP 400V 10A TO263
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MKE38RK600DFEL-TRR MKE38RK600DFEL-TRR IXYS littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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MKE38RK600DFEL-TRR MKE38RK600DFEL-TRR IXYS littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf Description: MOSFET N-CH 600V 50A SMPD
Packaging: Cut Tape (CT)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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IXFP130N15X3 IXFP130N15X3 IXYS DS100808B(IXFA-FP-FH130N15X3).pdf Description: MOSFET N-CH 150V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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MDMA120U1600VA MDMA120U1600VA IXYS Description: 3-PH. REC. BRIDGE, B6U
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 1.42 V @ 120 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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IXA70R1200NA IXA70R1200NA IXYS media?resourcetype=datasheets&itemid=fc5d3dbd-88b8-4127-8521-3b8c1f32f4ed&filename=littelfuse_discrete_igbts_xpt_ixa70r1200na_datasheet.pdf Description: DISC IGBT XPT-GENX3 SOT-227B(MIN
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 4.5mJ (on), 5.5mJ (off)
Test Condition: 600V, 50A, 15Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
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R0577YC12E IXYS Description: SCR 1.2KV 1169A W58
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R0577YC12D IXYS Description: SCR 1.2KV 1169A W58
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R0577YC12C IXYS Description: SCR 1.2KV 1169A W58
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IXTL2N470 IXTL2N470 IXYS DS100759IXTL2N470.pdf Description: MOSFET N-CH 4700V 2A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 1A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4700 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V
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N4165EE450 IXYS Description: SCR 4.5KV W108
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IXYK120N120B3 IXYK120N120B3 IXYS littelfuse-discrete-igbts-ixy-120n120b3-datasheet?assetguid=18553f1c-eef0-4d23-a446-4aba83b01353 Description: IGBT PT 1200V 320A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
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IXYK110N120C4 IXYK110N120C4 IXYS littelfuse-discrete-igbts-xpt-ixyk110n120c4-datasheet?assetguid=e811414b-e767-4e99-a24a-d3da268d9109 Description: IGBT 1200V 310A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
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IXYX110N120B4 IXYX110N120B4 IXYS littelfuse-discrete-igbts-xpt-ixyx110n120b4-datasheet?assetguid=3690078d-f346-41db-b4c2-00adc54c6541 Description: IGBT 1200V 340A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 45ns/390ns
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1360 W
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IXYX110N120C4 IXYX110N120C4 IXYS littelfuse-discrete-igbts-xpt-ixyx110n120c4-datasheet?assetguid=9eb515e0-1e98-41ab-a832-9f7c6d9306a4 Description: IGBT 1200V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
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IXYK110N120B4 IXYK110N120B4 IXYS littelfuse-discrete-igbts-xpt-ixyk110n120b4-datasheet?assetguid=fd01dab2-a2c0-4beb-a09e-3281186f62f3 Description: IGBT 1200V 340A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 45ns/390ns
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1360 W
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IXYN110N120C4 IXYN110N120C4 IXYS Description: IGBT 1200V 110A GEN4 XPT SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5.42 nF @ 25 V
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IXYH55N120C4 IXYH55N120C4 IXYS media?resourcetype=datasheets&itemid=09ec817a-29e6-4554-80d0-ab94fd184b7f&filename=littelfuse-discrete-igbts-xpt-ixyh55n120c4-datasheet Description: IGBT 1200V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
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IXYH85N120C4 IXYH85N120C4 IXYS littelfuse-discrete-igbts-ixyh85n120c4-datasheet?assetguid=5d47d7d9-57ae-4f7e-a907-0f6fb1df1c9d Description: IGBT 1200V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
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MDD26-16N1B MDD26-16N1B IXYS media?resourcetype=datasheets&itemid=C376EA2F-504E-4F0F-9FD3-4FD56272018D&filename=Littelfuse-Power-Semiconductors-MDD26-16N1B-Datasheet Description: DIODE MOD GP 1.6KV 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
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MDD600-14N1 IXYS Description: DIODE MODULE GEN PURP 1400V 883A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 883A
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A
Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
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IXFA76N15T2-TRL IXFA76N15T2-TRL IXYS Description: MOSFET N-CH 150V 76A TO263
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DSS6-0045AS-TRL DSS6-0045AS-TRL IXYS media?resourcetype=datasheets&itemid=26f424a8-fa3a-4cf3-ac9d-39e46233ee00&filename=Power-Semiconductor-Discrete-Diode-DSS6-0045AS-Datasheet Description: DIODE SCHOTTKY 45V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
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DSS6-0045AS-TRL DSS6-0045AS-TRL IXYS media?resourcetype=datasheets&itemid=26f424a8-fa3a-4cf3-ac9d-39e46233ee00&filename=Power-Semiconductor-Discrete-Diode-DSS6-0045AS-Datasheet Description: DIODE SCHOTTKY 45V 6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
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M2325HA400 M2325HA400 IXYS M2325HA400_450_DS.pdf Description: DIODE FAST RECOVERY 4000V 2325A
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M2325HA450 M2325HA450 IXYS M2325HA400_450_DS.pdf Description: DIODE FAST RECOVERY 4500V 2325A
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IXYH20N65B3 IXYS media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
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IXTA86N20T-TRL IXTA86N20T-TRL IXYS Description: MOSFET N-CH 200V 86A TO263
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MEA95-06DA MEA95-06DA IXYS Littelfuse-Power-Semiconductors-MEA95-06DA-MEK95-06DA-MEE95-06DA-Datasheet?assetguid=28370ac9-cdbf-432b-9115-f10f0447c92e Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
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CMA80E1600HB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA80E1600HB.pdf Description: SCR 1.6KV 126A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - On State (Vtm) (Max): 1.47 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
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IXTA08N100D2HV-TRL IXTA08N100D2HV-TRL IXYS Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA1R6N100D2-TRL IXTA1R6N100D2-TRL IXYS Description: MOSFET N-CH 1000V 1.6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY1R6N100D2-TRL IXYS Description: MOSFET N-CH 1000V 1.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ72N30X3 IXFQ72N30X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_72n30x3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXGA20N250HV IXGA20N250HV IXYS media?resourcetype=datasheets&itemid=9fde41e4-137a-41fe-b3f2-26b1771c44c3&filename=littelfuse_discrete_igbts_npt_ixga20n250hv_datasheet.pdf Description: DISC IGBT NPT-VERY HI VOLTAGE TO
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: TO-263HV
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 150 W
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IXGA20N250HV-TRL IXGA20N250HV-TRL IXYS Description: DISC IGBT NPT VERY HI VOLTAGE TO
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: TO-263HV
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 150 W
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MCC700-16IO1W-T IXYS Description: MOD SCR THYRISTOR 1600V
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MCMA110P1800TA MCMA110P1800TA IXYS Littelfuse-Power-Semiconductors-MCMA110P1800TA-Datasheet?assetguid=1A80BF49-FDDD-4808-88B6-6F483E1C0835 Description: SCR MODULE 1.8KV 200A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 200 A
Voltage - Off State: 1.8 kV
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MCMA700P1600CA MCMA700P1600CA IXYS Littelfuse-Power-Semiconductors-MCMA700P1600CA-Datasheet?assetguid=57518344-5E3E-45C3-87E9-9D9F6D24E9A7 Description: SCR MODULE 1.6KV 1100A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1100 A
Voltage - Off State: 1.6 kV
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IXYH20N120C4 IXYS Description: IGBT DISCRETE TO-247
Packaging: Tube
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MCMA400PD1600PTSF IXYS Description: SCR MODULE 1.6KV 400A SIMBUS F
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MDMA600P1600PTSF IXYS Description: BIPOLAR MODULE - DIODE SIMBUS F-
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MDNA425P2200PTSF IXYS Description: BIPOLAR MODULE - DIODE SIMBUS F-
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MDNA300P2200PTSF IXYS Description: BIPOLAR MODULE - DIODE SIMBUS F-
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MDNA600P2200PTSF IXYS Description: BIPOLAR MODULE - DIODE SIMBUS F-
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MCMA550PD1600PTSF IXYS Description: SCR MODULE 1.6KV SIMBUS F
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MDNA360UB2200PTED MDNA360UB2200PTED IXYS MDNA360UB2200PTED.pdf Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Packaging: Tray
Package / Case: E2
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E2
Voltage - Peak Reverse (Max): 1.7 kV
Current - Average Rectified (Io): 360 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
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MDNA240U2200ED IXYS Description: BIPOLARMODULE-BRIDGERECTIFIER E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E2
Part Status: Active
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 240 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 240 A
Current - Reverse Leakage @ Vr: 200 µA @ 2200 V
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MDMA450UB1600PTED IXYS Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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MDMA280UB1600PTED IXYS Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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MDMA240UB1600ED IXYS Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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MDMA210UB1600PTED IXYS Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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MDMA360UB1600PTED IXYS Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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MCMA240UI1600PED IXYS Description: SCR MODULE 1.6KV 200A E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Current - On State (It (AV)) (Max): 88 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 200 A
Voltage - Off State: 1.6 kV
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MCMA240UI1600ED IXYS Description: SCR MODULE 1.6KV 200A E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Current - On State (It (AV)) (Max): 240 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 200 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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VVZB170-16IOXT-PFP IXYS Description: BIPOLAR MODULE-THYRISTOR/DIODE E
Packaging: Bulk
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Current - On State (It (AV)) (Max): 48 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 200 A
Voltage - Off State: 1.6 kV
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MCNA120UI2200PED IXYS Description: BIPOLAR MODULE - THYRISTOR E2-P
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N2543ZD300 IXYS Description: SCR 3KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 3 kV
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N2418ZD300 IXYS Description: SCR 3KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - On State (It (AV)) (Max): 2418 A
Supplier Device Package: W46
Voltage - Off State: 3 kV
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DPG20C400PC-TUB
DPG20C400PC-TUB
Hersteller: IXYS
Description: POWER DIODE DISCRETES-FRED TO-26
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DPG20C400PC-TRL DPG20C400PC.pdf
DPG20C400PC-TRL
Hersteller: IXYS
Description: DIODE ARRAY GP 400V 10A TO263
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MKE38RK600DFEL-TRR littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf
MKE38RK600DFEL-TRR
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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Anzahl Preis
200+41.81 EUR
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MKE38RK600DFEL-TRR littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf
MKE38RK600DFEL-TRR
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Cut Tape (CT)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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1+62.88 EUR
10+46.73 EUR
100+41.81 EUR
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IXFP130N15X3 DS100808B(IXFA-FP-FH130N15X3).pdf
IXFP130N15X3
Hersteller: IXYS
Description: MOSFET N-CH 150V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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MDMA120U1600VA
MDMA120U1600VA
Hersteller: IXYS
Description: 3-PH. REC. BRIDGE, B6U
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 1.42 V @ 120 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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IXA70R1200NA media?resourcetype=datasheets&itemid=fc5d3dbd-88b8-4127-8521-3b8c1f32f4ed&filename=littelfuse_discrete_igbts_xpt_ixa70r1200na_datasheet.pdf
IXA70R1200NA
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 SOT-227B(MIN
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 4.5mJ (on), 5.5mJ (off)
Test Condition: 600V, 50A, 15Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
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R0577YC12E
Hersteller: IXYS
Description: SCR 1.2KV 1169A W58
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R0577YC12D
Hersteller: IXYS
Description: SCR 1.2KV 1169A W58
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R0577YC12C
Hersteller: IXYS
Description: SCR 1.2KV 1169A W58
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IXTL2N470 DS100759IXTL2N470.pdf
IXTL2N470
Hersteller: IXYS
Description: MOSFET N-CH 4700V 2A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 1A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4700 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V
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1+133.5 EUR
25+131.12 EUR
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N4165EE450
Hersteller: IXYS
Description: SCR 4.5KV W108
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IXYK120N120B3 littelfuse-discrete-igbts-ixy-120n120b3-datasheet?assetguid=18553f1c-eef0-4d23-a446-4aba83b01353
IXYK120N120B3
Hersteller: IXYS
Description: IGBT PT 1200V 320A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
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IXYK110N120C4 littelfuse-discrete-igbts-xpt-ixyk110n120c4-datasheet?assetguid=e811414b-e767-4e99-a24a-d3da268d9109
IXYK110N120C4
Hersteller: IXYS
Description: IGBT 1200V 310A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
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IXYX110N120B4 littelfuse-discrete-igbts-xpt-ixyx110n120b4-datasheet?assetguid=3690078d-f346-41db-b4c2-00adc54c6541
IXYX110N120B4
Hersteller: IXYS
Description: IGBT 1200V 340A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 45ns/390ns
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
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IXYX110N120C4 littelfuse-discrete-igbts-xpt-ixyx110n120c4-datasheet?assetguid=9eb515e0-1e98-41ab-a832-9f7c6d9306a4
IXYX110N120C4
Hersteller: IXYS
Description: IGBT 1200V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
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IXYK110N120B4 littelfuse-discrete-igbts-xpt-ixyk110n120b4-datasheet?assetguid=fd01dab2-a2c0-4beb-a09e-3281186f62f3
IXYK110N120B4
Hersteller: IXYS
Description: IGBT 1200V 340A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 45ns/390ns
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1360 W
auf Bestellung 231 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.17 EUR
25+23.55 EUR
100+21.47 EUR
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IXYN110N120C4
IXYN110N120C4
Hersteller: IXYS
Description: IGBT 1200V 110A GEN4 XPT SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5.42 nF @ 25 V
auf Bestellung 296 Stücke:
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Anzahl Preis
1+55.25 EUR
10+40.94 EUR
100+36.35 EUR
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IXYH55N120C4 media?resourcetype=datasheets&itemid=09ec817a-29e6-4554-80d0-ab94fd184b7f&filename=littelfuse-discrete-igbts-xpt-ixyh55n120c4-datasheet
IXYH55N120C4
Hersteller: IXYS
Description: IGBT 1200V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
auf Bestellung 210 Stücke:
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Anzahl Preis
2+15.31 EUR
30+9 EUR
120+7.61 EUR
Mindestbestellmenge: 2
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IXYH85N120C4 littelfuse-discrete-igbts-ixyh85n120c4-datasheet?assetguid=5d47d7d9-57ae-4f7e-a907-0f6fb1df1c9d
IXYH85N120C4
Hersteller: IXYS
Description: IGBT 1200V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
auf Bestellung 252 Stücke:
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Anzahl Preis
1+23.88 EUR
30+14.69 EUR
120+12.68 EUR
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MDD26-16N1B media?resourcetype=datasheets&itemid=C376EA2F-504E-4F0F-9FD3-4FD56272018D&filename=Littelfuse-Power-Semiconductors-MDD26-16N1B-Datasheet
MDD26-16N1B
Hersteller: IXYS
Description: DIODE MOD GP 1.6KV 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
auf Bestellung 262 Stücke:
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Anzahl Preis
1+40.52 EUR
36+28.02 EUR
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MDD600-14N1
Hersteller: IXYS
Description: DIODE MODULE GEN PURP 1400V 883A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 18 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 883A
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A
Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
Produkt ist nicht verfügbar
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IXFA76N15T2-TRL
IXFA76N15T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 150V 76A TO263
Produkt ist nicht verfügbar
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DSS6-0045AS-TRL media?resourcetype=datasheets&itemid=26f424a8-fa3a-4cf3-ac9d-39e46233ee00&filename=Power-Semiconductor-Discrete-Diode-DSS6-0045AS-Datasheet
DSS6-0045AS-TRL
Hersteller: IXYS
Description: DIODE SCHOTTKY 45V 6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Produkt ist nicht verfügbar
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DSS6-0045AS-TRL media?resourcetype=datasheets&itemid=26f424a8-fa3a-4cf3-ac9d-39e46233ee00&filename=Power-Semiconductor-Discrete-Diode-DSS6-0045AS-Datasheet
DSS6-0045AS-TRL
Hersteller: IXYS
Description: DIODE SCHOTTKY 45V 6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Produkt ist nicht verfügbar
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M2325HA400 M2325HA400_450_DS.pdf
M2325HA400
Hersteller: IXYS
Description: DIODE FAST RECOVERY 4000V 2325A
Produkt ist nicht verfügbar
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M2325HA450 M2325HA400_450_DS.pdf
M2325HA450
Hersteller: IXYS
Description: DIODE FAST RECOVERY 4500V 2325A
Produkt ist nicht verfügbar
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IXYH20N65B3 media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
Produkt ist nicht verfügbar
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IXTA86N20T-TRL
IXTA86N20T-TRL
Hersteller: IXYS
Description: MOSFET N-CH 200V 86A TO263
Produkt ist nicht verfügbar
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MEA95-06DA Littelfuse-Power-Semiconductors-MEA95-06DA-MEK95-06DA-MEE95-06DA-Datasheet?assetguid=28370ac9-cdbf-432b-9115-f10f0447c92e
MEA95-06DA
Hersteller: IXYS
Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Produkt ist nicht verfügbar
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CMA80E1600HB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA80E1600HB.pdf
Hersteller: IXYS
Description: SCR 1.6KV 126A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - On State (Vtm) (Max): 1.47 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
auf Bestellung 1805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12 EUR
10+10.29 EUR
100+8.57 EUR
500+7.57 EUR
1000+6.81 EUR
Mindestbestellmenge: 2
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IXTA08N100D2HV-TRL
IXTA08N100D2HV-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA1R6N100D2-TRL
IXTA1R6N100D2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY1R6N100D2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ72N30X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_72n30x3_datasheet.pdf.pdf
IXFQ72N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.59 EUR
10+15.93 EUR
100+13.27 EUR
500+11.71 EUR
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IXGA20N250HV media?resourcetype=datasheets&itemid=9fde41e4-137a-41fe-b3f2-26b1771c44c3&filename=littelfuse_discrete_igbts_npt_ixga20n250hv_datasheet.pdf
IXGA20N250HV
Hersteller: IXYS
Description: DISC IGBT NPT-VERY HI VOLTAGE TO
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: TO-263HV
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 150 W
auf Bestellung 1200 Stücke:
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Anzahl Preis
300+74.18 EUR
Mindestbestellmenge: 300
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IXGA20N250HV-TRL
IXGA20N250HV-TRL
Hersteller: IXYS
Description: DISC IGBT NPT VERY HI VOLTAGE TO
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 20A
Supplier Device Package: TO-263HV
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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MCC700-16IO1W-T
Hersteller: IXYS
Description: MOD SCR THYRISTOR 1600V
Produkt ist nicht verfügbar
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MCMA110P1800TA Littelfuse-Power-Semiconductors-MCMA110P1800TA-Datasheet?assetguid=1A80BF49-FDDD-4808-88B6-6F483E1C0835
MCMA110P1800TA
Hersteller: IXYS
Description: SCR MODULE 1.8KV 200A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 200 A
Voltage - Off State: 1.8 kV
auf Bestellung 32 Stücke:
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Anzahl Preis
1+59.51 EUR
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MCMA700P1600CA Littelfuse-Power-Semiconductors-MCMA700P1600CA-Datasheet?assetguid=57518344-5E3E-45C3-87E9-9D9F6D24E9A7
MCMA700P1600CA
Hersteller: IXYS
Description: SCR MODULE 1.6KV 1100A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1100 A
Voltage - Off State: 1.6 kV
auf Bestellung 3 Stücke:
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Anzahl Preis
1+331.69 EUR
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IXYH20N120C4
Hersteller: IXYS
Description: IGBT DISCRETE TO-247
Packaging: Tube
Produkt ist nicht verfügbar
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MCMA400PD1600PTSF
Hersteller: IXYS
Description: SCR MODULE 1.6KV 400A SIMBUS F
Produkt ist nicht verfügbar
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MDMA600P1600PTSF
Hersteller: IXYS
Description: BIPOLAR MODULE - DIODE SIMBUS F-
Produkt ist nicht verfügbar
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MDNA425P2200PTSF
Hersteller: IXYS
Description: BIPOLAR MODULE - DIODE SIMBUS F-
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+266.17 EUR
Mindestbestellmenge: 24
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MDNA300P2200PTSF
Hersteller: IXYS
Description: BIPOLAR MODULE - DIODE SIMBUS F-
Produkt ist nicht verfügbar
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MDNA600P2200PTSF
Hersteller: IXYS
Description: BIPOLAR MODULE - DIODE SIMBUS F-
Produkt ist nicht verfügbar
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MCMA550PD1600PTSF
Hersteller: IXYS
Description: SCR MODULE 1.6KV SIMBUS F
Produkt ist nicht verfügbar
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MDNA360UB2200PTED MDNA360UB2200PTED.pdf
MDNA360UB2200PTED
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Packaging: Tray
Package / Case: E2
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E2
Voltage - Peak Reverse (Max): 1.7 kV
Current - Average Rectified (Io): 360 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+317.93 EUR
10+297.78 EUR
28+286.58 EUR
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MDNA240U2200ED
Hersteller: IXYS
Description: BIPOLARMODULE-BRIDGERECTIFIER E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E2
Part Status: Active
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 240 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 240 A
Current - Reverse Leakage @ Vr: 200 µA @ 2200 V
Produkt ist nicht verfügbar
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MDMA450UB1600PTED
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
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MDMA280UB1600PTED
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
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MDMA240UB1600ED
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
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MDMA210UB1600PTED
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
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MDMA360UB1600PTED
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
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MCMA240UI1600PED
Hersteller: IXYS
Description: SCR MODULE 1.6KV 200A E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Current - On State (It (AV)) (Max): 88 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 200 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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MCMA240UI1600ED
Hersteller: IXYS
Description: SCR MODULE 1.6KV 200A E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1620A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Current - On State (It (AV)) (Max): 240 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 200 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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VVZB170-16IOXT-PFP
Hersteller: IXYS
Description: BIPOLAR MODULE-THYRISTOR/DIODE E
Packaging: Bulk
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Current - On State (It (AV)) (Max): 48 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 200 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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MCNA120UI2200PED
Hersteller: IXYS
Description: BIPOLAR MODULE - THYRISTOR E2-P
Produkt ist nicht verfügbar
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N2543ZD300
Hersteller: IXYS
Description: SCR 3KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 3 kV
Produkt ist nicht verfügbar
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N2418ZD300
Hersteller: IXYS
Description: SCR 3KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - On State (It (AV)) (Max): 2418 A
Supplier Device Package: W46
Voltage - Off State: 3 kV
Produkt ist nicht verfügbar
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