Technische Details MDD600-14N1 IXYS
Description: DIODE MODULE GEN PURP 1400V 883A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 18 µs, Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 883A, Operating Temperature - Junction: -40°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 1400 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A, Current - Reverse Leakage @ Vr: 50 mA @ 1400 V.
Weitere Produktangebote MDD600-14N1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MDD600-14N1 | Hersteller : IXYS |
Description: DIODE MODULE GEN PURP 1400V 883A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 18 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 883A Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A Current - Reverse Leakage @ Vr: 50 mA @ 1400 V |
Produkt ist nicht verfügbar |
||
 |
MDD600-14N1 | Hersteller : IXYS |
 Discrete Semiconductor Modules |
Produkt ist nicht verfügbar |