Technische Details MDD600-14N1 IXYS
Description: DIODE MODULE GEN PURP 1400V 883A, Current - Reverse Leakage @ Vr: 50 mA @ 1400 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A, Voltage - DC Reverse (Vr) (Max): 1400 V, Operating Temperature - Junction: -40°C ~ 125°C, Current - Average Rectified (Io) (per Diode): 883A, Diode Configuration: 1 Pair Series Connection, Technology: Standard, Reverse Recovery Time (trr): 18 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote MDD600-14N1
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| MDD600-14N1 | Hersteller : IXYS |
Description: DIODE MODULE GEN PURP 1400V 883A Current - Reverse Leakage @ Vr: 50 mA @ 1400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A Voltage - DC Reverse (Vr) (Max): 1400 V Operating Temperature - Junction: -40°C ~ 125°C Current - Average Rectified (Io) (per Diode): 883A Diode Configuration: 1 Pair Series Connection Technology: Standard Reverse Recovery Time (trr): 18 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
Produkt ist nicht verfügbar |
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MDD600-14N1 | Hersteller : IXYS |
 Discrete Semiconductor Modules |
Produkt ist nicht verfügbar |