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MEE75-12DA MEE75-12DA IXYS MEA-MEK-MEE_75-12DA.PDF Description: DIODE MOD GP 1200V 75A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
auf Bestellung 101 Stücke:
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1+50.86 EUR
36+32.93 EUR
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CLA60MT1200NTZ-TRL IXYS Description: THYRISTOR - TO268AA
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IXTF1N250 IXYS media?resourcetype=datasheets&amp;itemid=d862da0b-11e1-49fe-a32a-4515921a64e4&amp;filename=littelfuse_discrete_mosfets_n-channel_standard_ixtf1n250_datasheet.pdf Description: MOSFET N-CH 2500V 1A ISOPLUS I4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 110W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
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DSP45-12AZ-TRL DSP45-12AZ-TRL IXYS littelfuse-power-semiconductors-dsp45-12az-datasheet?assetguid=349b9449-ba5f-4e77-88ae-4ec5807e9b7b Description: DIODE ARRAY GP 1200V 45A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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DSP45-18A DSP45-18A IXYS Littelfuse-Power-Semiconductors-DSP45-18A-Datasheet?assetguid=91090e86-fca9-4436-8c3a-e9be97a70b50 Description: DIODE STANDARD 1800V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-247 (IXTH)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
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IXYX50N170C IXYX50N170C IXYS littelfuse-discrete-igbts-ixyx50n170c-datasheet?assetguid=07d284af-ff38-43e9-9dc7-89f24c802f28 Description: IGBT 1700V 178A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 8.7mJ (on), 5.6mJ (off)
Test Condition: 850V, 50A, 1Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 178 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 1500 W
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W5715ED600 IXYS Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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IXFY8N65X2 IXFY8N65X2 IXYS littelfuse-discrete-mosfets-ixf-8n65x2-datasheet?assetguid=aba0f080-6f89-458e-871e-e69e2a873fc7 Description: MOSFET N-CH 650V 8A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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IX6610T IX6610T IXYS IX6610_R00A.pdf Description: IC MOSF DRIVER
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IXTM6N90A IXYS 91543.pdf Description: MOSFET N-CH 900V 6A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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IXFT54N65X3HV IXYS Description: DISCRETE MOSFET 54A 650V X3 TO26
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IXGH4N250C IXGH4N250C IXYS DS100320(IXGH-GT4N250C).pdf Description: IGBT 2500V 13A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: -/350ns
Switching Energy: 360µJ (off)
Test Condition: 1250V, 4A, 20Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 46 A
Power - Max: 150 W
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IXYH8N250C IXYS DS100789A(IXYH8N250C)_.pdf Description: IGBT 2500V 29A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
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DSS10-01AS-TRL DSS10-01AS-TRL IXYS DSS10-01AS_2021.pdf Description: DIODE SCHOTTKY 100V 10A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
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MDD72-18N1B MDD72-18N1B IXYS MDD72-18N1B.pdf Description: DIODE MOD GP 1800V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1800 V
Produkt ist nicht verfügbar
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IXGM17N100A IXYS littelfuse_discrete_igbts_pt_ixgh17n100_datasheet.pdf.pdf Description: IGBT 1000V 34A 150W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
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IXBOD2-17R IXYS Description: POWER DIODE DISC-OTHERS FP-CASE
Packaging: Tube
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - On State: 1.3 V
Supplier Device Package: FP-Case
Produkt ist nicht verfügbar
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DHG10IM1800UZ-TUB IXYS Description: SONIC-1800V-10A- DPAK-HV-TUBE
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DHG10IM1800UZ-TRL IXYS Description: SONIC-1800V-10A- DPAK-HV-REEL
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W1980JK180 IXYS Description: DIODE GEN PURP 1.8KV 1980A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1980A
Supplier Device Package: W113
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
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IXFA30N25X3 IXFA30N25X3 IXYS littelfuse-discrete-mosfets-ixf-30n25x3-datasheet?assetguid=f98c5907-f43b-4415-a418-45a0a7855e6d Description: MOSFET N-CHANNEL 250V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 2100 Stücke:
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50+6.83 EUR
100+6.28 EUR
500+5.43 EUR
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IXYP15N65B3D1 IXYS Description: IGBT TO220AB
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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DMA80IM1600HB DMA80IM1600HB IXYS DMA80IM1600HB.pdf Description: PWR DIODE RECT 80A 1600V TO-247
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N0910LC260 IXYS media?resourcetype=datasheets&itemid=aa249cdc-6382-4a83-aed0-009d552ad579&filename=littelfuse-discrete-thyristors-phase-control-n0910lc2-0-datasheet Description: SCR 2.6KV 1788A W10
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10100A @ 50Hz
Current - On State (It (AV)) (Max): 910 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.07 V
Current - Off State (Max): 60 mA
Supplier Device Package: W10
Current - On State (It (RMS)) (Max): 1788 A
Voltage - Off State: 2.6 kV
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N1174JK220 IXYS littelfusediscretethyristorsphasecontroln1174jk20datasheetpdf.pdf Description: SCR 2.2KV 2313A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - On State (It (AV)) (Max): 1174 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.46 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2313 A
Voltage - Off State: 2.2 kV
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IX4310N IXYS Description: HIGH SPEED LOW-SIDE DRIVER 2A 8L
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IX4310NTR IXYS Description: HIGH SPEED LOW-SIDE DRIVER 2A 8L
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N5320FE450 IXYS Description: SCR 4.5KV W119
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N5320FE420 IXYS Description: SCR 4.2KV W119
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IXFY26N30X3 IXFY26N30X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_26n30x3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 26A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
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MDD26-14N1B MDD26-14N1B IXYS MDD26-14N1B.pdf Description: DIODE MODULE 1.4KV 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
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IXYP20N120A4 IXYP20N120A4 IXYS littelfuse-discrete-igbts-ixy-20n120a4-datasheet?assetguid=b40a9e42-70b2-4715-a4d2-5a93d0449e25 Description: IGBT PT 1200V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
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IXYA20N120C3HV-TRL IXYA20N120C3HV-TRL IXYS DS100484BIXYHPA20N120C3HV.pdf Description: IGBT 1200V 40A TO-263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
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IXYP20N120C4 IXYP20N120C4 IXYS littelfuse-discrete-igbts-ixy-20n120c4-datasheet?assetguid=3c16feb5-2ff7-4546-a254-e439f5e43f0d Description: IGBT 1200V 68A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
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IXGM40N60 IXYS Description: IGBT 600V 75A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 250 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
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N0530YN250 IXYS Description: SCR 2.5KV 1040A W91
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Current - On State (It (AV)) (Max): 530 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3.5 V
Current - Off State (Max): 70 mA
Supplier Device Package: W91
Current - On State (It (RMS)) (Max): 1040 A
Voltage - Off State: 2.5 kV
Produkt ist nicht verfügbar
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N1075LN180 IXYS Description: SCR 1.8KV 2415A
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IXYP20N120B4 IXYP20N120B4 IXYS littelfuse-discrete-igbts-ixy-20n120b4-datasheet?assetguid=aeb4cb01-5ee7-4115-97e3-a99b8c505c4e Description: IGBT 1200V 76A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
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IXXH30N60C3 IXYS littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5 Description: IGBT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
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IXTA90N075T2-TRL IXTA90N075T2-TRL IXYS Description: MOSFET N-CH 75V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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E1780TG65E E1780TG65E IXYS littelfuse_discrete_diodes_fast_recovery_e1780tg65e_datasheet.pdf.pdf Description: DIODE GEN PURP 3.6KV 1780A -
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IXTA200N055T2-7 IXYS Description: MOSFET N-CH 55V 200A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
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IXTA200N055T2-TRL IXTA200N055T2-TRL IXYS Description: MOSFET N-CH 55V 200A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
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IXBH42N300HV IXYS Description: DISC IGBT BIMSFT-VERYHIVOLT TO-2
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IXBH32N300HV IXYS media?resourcetype=datasheets&amp;itemid=1eb01c74-889c-4efa-95d9-e741e6c946af&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_32n300hv_datasheet.pdf Description: DISC IGBT BIMSFT-VERYHIVOLT TO-2
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247HV
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
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IXTN240N075L2 IXTN240N075L2 IXYS littelfuse-discrete-mosfets-ixtn240n075-datasheet?assetguid=9d96f440-24ed-44e0-aabd-3c9a5cde32ea Description: MOSFET N-CH 75V 225A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFH98N60X3 IXFH98N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh98n60x3_datasheet.pdf.pdf Description: MOSFET ULTRA JCT 600V 98A TO247
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IXFH78N60X3 IXFH78N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh78n60x3_datasheet.pdf.pdf Description: MOSFET ULTRA JCT 600V 78A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 38mOhm @ 39A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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CLA16E800PN IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA16E800PN.pdf Description: SCR 800V 16A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.14 V
Supplier Device Package: TO-220ABFP
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
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CLA16E1200PN CLA16E1200PN IXYS Littelfuse-Power-Semiconductors-CLA16E1200PN-Datasheet?assetguid=d60672de-ddba-4e11-8d6a-cf61d2811ac7 Description: SCR 1.2KV 16A TO-220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.14 V
Supplier Device Package: TO-220ABFP
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 1.2 kV
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DSB10P60PN DSB10P60PN IXYS Description: DIODE SCHOTTKY 60V 10A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 149pF @ 12V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220ABFP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
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M1494NC250 M1494NC250 IXYS Description: DIODE STANDARD 2500V 1494A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.9 µs
Technology: Standard
Current - Average Rectified (Io): 1494A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.34 V @ 4500 A
Current - Reverse Leakage @ Vr: 85 mA @ 2500 V
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M0659LC450 IXYS Description: FAST DIODE
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IXFA26N30X3 IXFA26N30X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_26n30x3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 26A TO263AA
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ITF48IF1200HR ITF48IF1200HR IXYS media?resourcetype=datasheets&itemid=7cc07480-b755-4325-b4fc-520c77c2bae4&filename=littelfuse_discrete_igbts_xpt_itf48if1200hr_datasheet.pdf Description: IGBT TRENCH 1200V 72A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: ISO247
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 3mJ (on), 2.4mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 175 nC
Part Status: Active
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
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CS19-12HO1S-TRL CS19-12HO1S-TRL IXYS media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet Description: SCR 1.2KV 29A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 19 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-263AA
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 1.2 kV
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CS19-12HO1S-TRL CS19-12HO1S-TRL IXYS media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet Description: SCR 1.2KV 29A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 19 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-263AA
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 1.2 kV
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IXTA6N100D2-TRL IXTA6N100D2-TRL IXYS Description: MOSFET N-CH 1000V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
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IXTA6N100D2HV IXTA6N100D2HV IXYS media?resourcetype=datasheets&itemid=d5edabee-7480-4970-a92b-1b6b944040ed&filename=littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta6n100d2hv_datasheet.pdf Description: MOSFET N-CH 1000V 6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
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FII24N170AH1 IXYS FII24N170AH1.pdf Description: IGBT H BRIDGE 1700V 18A I4PAK5
Packaging: Tube
Package / Case: i4-Pac™-4, Isolated
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
NTC Thermistor: No
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.4 nF @ 25 V
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MEE75-12DA MEA-MEK-MEE_75-12DA.PDF
MEE75-12DA
Hersteller: IXYS
Description: DIODE MOD GP 1200V 75A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
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CLA60MT1200NTZ-TRL
Hersteller: IXYS
Description: THYRISTOR - TO268AA
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IXTF1N250 media?resourcetype=datasheets&amp;itemid=d862da0b-11e1-49fe-a32a-4515921a64e4&amp;filename=littelfuse_discrete_mosfets_n-channel_standard_ixtf1n250_datasheet.pdf
Hersteller: IXYS
Description: MOSFET N-CH 2500V 1A ISOPLUS I4
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Power Dissipation (Max): 110W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
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DSP45-12AZ-TRL littelfuse-power-semiconductors-dsp45-12az-datasheet?assetguid=349b9449-ba5f-4e77-88ae-4ec5807e9b7b
DSP45-12AZ-TRL
Hersteller: IXYS
Description: DIODE ARRAY GP 1200V 45A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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DSP45-18A Littelfuse-Power-Semiconductors-DSP45-18A-Datasheet?assetguid=91090e86-fca9-4436-8c3a-e9be97a70b50
DSP45-18A
Hersteller: IXYS
Description: DIODE STANDARD 1800V 45A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-247 (IXTH)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
auf Bestellung 5741 Stücke:
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Anzahl Preis
2+10.6 EUR
30+6.17 EUR
120+5.4 EUR
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IXYX50N170C littelfuse-discrete-igbts-ixyx50n170c-datasheet?assetguid=07d284af-ff38-43e9-9dc7-89f24c802f28
IXYX50N170C
Hersteller: IXYS
Description: IGBT 1700V 178A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 8.7mJ (on), 5.6mJ (off)
Test Condition: 850V, 50A, 1Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 178 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 1500 W
auf Bestellung 870 Stücke:
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1+41.43 EUR
30+26.51 EUR
120+24.76 EUR
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W5715ED600
Hersteller: IXYS
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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IXFY8N65X2 littelfuse-discrete-mosfets-ixf-8n65x2-datasheet?assetguid=aba0f080-6f89-458e-871e-e69e2a873fc7
IXFY8N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 8A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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IX6610T IX6610_R00A.pdf
IX6610T
Hersteller: IXYS
Description: IC MOSF DRIVER
Produkt ist nicht verfügbar
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IXTM6N90A 91543.pdf
Hersteller: IXYS
Description: MOSFET N-CH 900V 6A TO204AA
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-204AA (IXTM)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT54N65X3HV
Hersteller: IXYS
Description: DISCRETE MOSFET 54A 650V X3 TO26
Produkt ist nicht verfügbar
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IXGH4N250C DS100320(IXGH-GT4N250C).pdf
IXGH4N250C
Hersteller: IXYS
Description: IGBT 2500V 13A 150W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 4A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: -/350ns
Switching Energy: 360µJ (off)
Test Condition: 1250V, 4A, 20Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 46 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IXYH8N250C DS100789A(IXYH8N250C)_.pdf
Hersteller: IXYS
Description: IGBT 2500V 29A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
Produkt ist nicht verfügbar
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DSS10-01AS-TRL DSS10-01AS_2021.pdf
DSS10-01AS-TRL
Hersteller: IXYS
Description: DIODE SCHOTTKY 100V 10A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Produkt ist nicht verfügbar
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MDD72-18N1B MDD72-18N1B.pdf
MDD72-18N1B
Hersteller: IXYS
Description: DIODE MOD GP 1800V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1800 V
Produkt ist nicht verfügbar
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IXGM17N100A littelfuse_discrete_igbts_pt_ixgh17n100_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT 1000V 34A 150W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IXBOD2-17R
Hersteller: IXYS
Description: POWER DIODE DISC-OTHERS FP-CASE
Packaging: Tube
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - On State: 1.3 V
Supplier Device Package: FP-Case
Produkt ist nicht verfügbar
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DHG10IM1800UZ-TUB
Hersteller: IXYS
Description: SONIC-1800V-10A- DPAK-HV-TUBE
auf Bestellung 770 Stücke:
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DHG10IM1800UZ-TRL
Hersteller: IXYS
Description: SONIC-1800V-10A- DPAK-HV-REEL
auf Bestellung 5000 Stücke:
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W1980JK180
Hersteller: IXYS
Description: DIODE GEN PURP 1.8KV 1980A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1980A
Supplier Device Package: W113
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Produkt ist nicht verfügbar
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IXFA30N25X3 littelfuse-discrete-mosfets-ixf-30n25x3-datasheet?assetguid=f98c5907-f43b-4415-a418-45a0a7855e6d
IXFA30N25X3
Hersteller: IXYS
Description: MOSFET N-CHANNEL 250V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 2100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.55 EUR
50+6.83 EUR
100+6.28 EUR
500+5.43 EUR
Mindestbestellmenge: 2
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IXYP15N65B3D1
Hersteller: IXYS
Description: IGBT TO220AB
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
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DMA80IM1600HB DMA80IM1600HB.pdf
DMA80IM1600HB
Hersteller: IXYS
Description: PWR DIODE RECT 80A 1600V TO-247
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N0910LC260 media?resourcetype=datasheets&itemid=aa249cdc-6382-4a83-aed0-009d552ad579&filename=littelfuse-discrete-thyristors-phase-control-n0910lc2-0-datasheet
Hersteller: IXYS
Description: SCR 2.6KV 1788A W10
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10100A @ 50Hz
Current - On State (It (AV)) (Max): 910 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.07 V
Current - Off State (Max): 60 mA
Supplier Device Package: W10
Current - On State (It (RMS)) (Max): 1788 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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N1174JK220 littelfusediscretethyristorsphasecontroln1174jk20datasheetpdf.pdf
Hersteller: IXYS
Description: SCR 2.2KV 2313A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - On State (It (AV)) (Max): 1174 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.46 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2313 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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IX4310N
Hersteller: IXYS
Description: HIGH SPEED LOW-SIDE DRIVER 2A 8L
Produkt ist nicht verfügbar
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IX4310NTR
Hersteller: IXYS
Description: HIGH SPEED LOW-SIDE DRIVER 2A 8L
Produkt ist nicht verfügbar
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N5320FE450
Hersteller: IXYS
Description: SCR 4.5KV W119
Produkt ist nicht verfügbar
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N5320FE420
Hersteller: IXYS
Description: SCR 4.2KV W119
Produkt ist nicht verfügbar
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IXFY26N30X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_26n30x3_datasheet.pdf.pdf
IXFY26N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 26A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.24 EUR
10+7.4 EUR
100+6.06 EUR
Mindestbestellmenge: 3
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MDD26-14N1B MDD26-14N1B.pdf
MDD26-14N1B
Hersteller: IXYS
Description: DIODE MODULE 1.4KV 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
auf Bestellung 25 Stücke:
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Anzahl Preis
1+47.15 EUR
10+43.49 EUR
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IXYP20N120A4 littelfuse-discrete-igbts-ixy-20n120a4-datasheet?assetguid=b40a9e42-70b2-4715-a4d2-5a93d0449e25
IXYP20N120A4
Hersteller: IXYS
Description: IGBT PT 1200V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXYA20N120C3HV-TRL DS100484BIXYHPA20N120C3HV.pdf
IXYA20N120C3HV-TRL
Hersteller: IXYS
Description: IGBT 1200V 40A TO-263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
Produkt ist nicht verfügbar
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IXYP20N120C4 littelfuse-discrete-igbts-ixy-20n120c4-datasheet?assetguid=3c16feb5-2ff7-4546-a254-e439f5e43f0d
IXYP20N120C4
Hersteller: IXYS
Description: IGBT 1200V 68A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXGM40N60
Hersteller: IXYS
Description: IGBT 600V 75A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 250 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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N0530YN250
Hersteller: IXYS
Description: SCR 2.5KV 1040A W91
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Current - On State (It (AV)) (Max): 530 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3.5 V
Current - Off State (Max): 70 mA
Supplier Device Package: W91
Current - On State (It (RMS)) (Max): 1040 A
Voltage - Off State: 2.5 kV
Produkt ist nicht verfügbar
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N1075LN180
Hersteller: IXYS
Description: SCR 1.8KV 2415A
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IXYP20N120B4 littelfuse-discrete-igbts-ixy-20n120b4-datasheet?assetguid=aeb4cb01-5ee7-4115-97e3-a99b8c505c4e
IXYP20N120B4
Hersteller: IXYS
Description: IGBT 1200V 76A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
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IXXH30N60C3 littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5
Hersteller: IXYS
Description: IGBT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
Produkt ist nicht verfügbar
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IXTA90N075T2-TRL
IXTA90N075T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 75V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
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E1780TG65E littelfuse_discrete_diodes_fast_recovery_e1780tg65e_datasheet.pdf.pdf
E1780TG65E
Hersteller: IXYS
Description: DIODE GEN PURP 3.6KV 1780A -
Produkt ist nicht verfügbar
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IXTA200N055T2-7
Hersteller: IXYS
Description: MOSFET N-CH 55V 200A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA200N055T2-TRL
IXTA200N055T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 55V 200A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
Produkt ist nicht verfügbar
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IXBH42N300HV
Hersteller: IXYS
Description: DISC IGBT BIMSFT-VERYHIVOLT TO-2
Produkt ist nicht verfügbar
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IXBH32N300HV media?resourcetype=datasheets&amp;itemid=1eb01c74-889c-4efa-95d9-e741e6c946af&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_32n300hv_datasheet.pdf
Hersteller: IXYS
Description: DISC IGBT BIMSFT-VERYHIVOLT TO-2
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247HV
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
Produkt ist nicht verfügbar
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IXTN240N075L2 littelfuse-discrete-mosfets-ixtn240n075-datasheet?assetguid=9d96f440-24ed-44e0-aabd-3c9a5cde32ea
IXTN240N075L2
Hersteller: IXYS
Description: MOSFET N-CH 75V 225A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
auf Bestellung 228 Stücke:
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Anzahl Preis
1+79.02 EUR
10+59.89 EUR
100+56.87 EUR
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IXFH98N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh98n60x3_datasheet.pdf.pdf
IXFH98N60X3
Hersteller: IXYS
Description: MOSFET ULTRA JCT 600V 98A TO247
auf Bestellung 194 Stücke:
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Anzahl Preis
1+28.76 EUR
10+26.42 EUR
100+22.32 EUR
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IXFH78N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh78n60x3_datasheet.pdf.pdf
IXFH78N60X3
Hersteller: IXYS
Description: MOSFET ULTRA JCT 600V 78A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 38mOhm @ 39A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 22 Stücke:
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Anzahl Preis
1+23.78 EUR
10+20.94 EUR
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CLA16E800PN Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA16E800PN.pdf
Hersteller: IXYS
Description: SCR 800V 16A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.14 V
Supplier Device Package: TO-220ABFP
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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CLA16E1200PN Littelfuse-Power-Semiconductors-CLA16E1200PN-Datasheet?assetguid=d60672de-ddba-4e11-8d6a-cf61d2811ac7
CLA16E1200PN
Hersteller: IXYS
Description: SCR 1.2KV 16A TO-220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.14 V
Supplier Device Package: TO-220ABFP
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 1.2 kV
auf Bestellung 750 Stücke:
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Anzahl Preis
4+5.72 EUR
50+2.89 EUR
100+2.62 EUR
Mindestbestellmenge: 4
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DSB10P60PN
DSB10P60PN
Hersteller: IXYS
Description: DIODE SCHOTTKY 60V 10A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 149pF @ 12V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220ABFP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Produkt ist nicht verfügbar
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M1494NC250
M1494NC250
Hersteller: IXYS
Description: DIODE STANDARD 2500V 1494A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.9 µs
Technology: Standard
Current - Average Rectified (Io): 1494A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.34 V @ 4500 A
Current - Reverse Leakage @ Vr: 85 mA @ 2500 V
Produkt ist nicht verfügbar
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M0659LC450
Hersteller: IXYS
Description: FAST DIODE
auf Bestellung 12 Stücke:
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IXFA26N30X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_26n30x3_datasheet.pdf.pdf
IXFA26N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 26A TO263AA
auf Bestellung 4 Stücke:
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Anzahl Preis
3+8.25 EUR
Mindestbestellmenge: 3
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ITF48IF1200HR media?resourcetype=datasheets&itemid=7cc07480-b755-4325-b4fc-520c77c2bae4&filename=littelfuse_discrete_igbts_xpt_itf48if1200hr_datasheet.pdf
ITF48IF1200HR
Hersteller: IXYS
Description: IGBT TRENCH 1200V 72A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: ISO247
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 3mJ (on), 2.4mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 175 nC
Part Status: Active
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Produkt ist nicht verfügbar
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CS19-12HO1S-TRL media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet
CS19-12HO1S-TRL
Hersteller: IXYS
Description: SCR 1.2KV 29A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 19 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-263AA
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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CS19-12HO1S-TRL media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet
CS19-12HO1S-TRL
Hersteller: IXYS
Description: SCR 1.2KV 29A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 19 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-263AA
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 1.2 kV
auf Bestellung 644 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.35 EUR
10+6.23 EUR
100+4.46 EUR
Mindestbestellmenge: 2
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IXTA6N100D2-TRL
IXTA6N100D2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1000V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA6N100D2HV media?resourcetype=datasheets&itemid=d5edabee-7480-4970-a92b-1b6b944040ed&filename=littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta6n100d2hv_datasheet.pdf
IXTA6N100D2HV
Hersteller: IXYS
Description: MOSFET N-CH 1000V 6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
Produkt ist nicht verfügbar
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FII24N170AH1 FII24N170AH1.pdf
Hersteller: IXYS
Description: IGBT H BRIDGE 1700V 18A I4PAK5
Packaging: Tube
Package / Case: i4-Pac™-4, Isolated
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
NTC Thermistor: No
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.4 nF @ 25 V
Produkt ist nicht verfügbar
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