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IXYH8N250C IXYS

DS100789A(IXYH8N250C)_.pdf
Hersteller: IXYS
Description: IGBT 2500V 29A TO247AD
Power - Max: 280 W
Current - Collector Pulsed (Icm): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 29 A
Part Status: Active
Gate Charge: 45 nC
Test Condition: 1250V, 8A, 15Ohm, 15V
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Td (on/off) @ 25°C: 11ns/180ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Reverse Recovery Time (trr): 5 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IXYH8N250C IXYS

Description: IGBT 2500V 29A TO247AD, Power - Max: 280 W, Current - Collector Pulsed (Icm): 70 A, Voltage - Collector Emitter Breakdown (Max): 2500 V, Current - Collector (Ic) (Max): 29 A, Part Status: Active, Gate Charge: 45 nC, Test Condition: 1250V, 8A, 15Ohm, 15V, Switching Energy: 2.6mJ (on), 1.07mJ (off), Td (on/off) @ 25°C: 11ns/180ns, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A, Reverse Recovery Time (trr): 5 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

Weitere Produktangebote IXYH8N250C

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IXYH8N250C IXYS DS100789A(IXYH8N250C)_.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 29A; 280W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 32A
Type of transistor: IGBT
Turn-on time: 12ns
Kind of package: tube
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 29A
Collector-emitter voltage: 2.5kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYH8N250C DS100789A(IXYH8N250C)_.pdf
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 29A; 280W; TO247-3
Case: TO247-3
Mounting: THT
Power dissipation: 280W
Gate charge: 45nC
Technology: XPT™
Features of semiconductor devices: high voltage
Pulsed collector current: 32A
Type of transistor: IGBT
Turn-on time: 12ns
Kind of package: tube
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 29A
Collector-emitter voltage: 2.5kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH