IXBA14N300HV IXYS
Hersteller: IXYSDescription: IGBT NPT 3000V 38A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A
Supplier Device Package: TO-263
IGBT Type: NPT
Td (on/off) @ 25°C: 40ns/166ns
Test Condition: 960V, 14A, 20Ohm, 15V
Gate Charge: 62 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 60.93 EUR |
| 50+ | 38.69 EUR |
| 100+ | 38.4 EUR |
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Technische Details IXBA14N300HV IXYS
Description: IGBT NPT 3000V 38A TO-263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 1.4 µs, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A, Supplier Device Package: TO-263, IGBT Type: NPT, Td (on/off) @ 25°C: 40ns/166ns, Test Condition: 960V, 14A, 20Ohm, 15V, Gate Charge: 62 nC, Current - Collector (Ic) (Max): 38 A, Voltage - Collector Emitter Breakdown (Max): 3000 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 200 W.
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Category: SMD IGBT transistors Description: Transistor: IGBT; 3kV; 38A; 200W; D2PAK Case: D2PAK Mounting: SMD Kind of package: tube Type of transistor: IGBT Gate charge: 62nC Collector current: 38A Power dissipation: 200W Gate-emitter voltage: ±20V Collector-emitter voltage: 3kV Pulsed collector current: 120A |
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