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IXYP20N120C4 IXYP20N120C4 IXYS littelfuse-discrete-igbts-ixy-20n120c4-datasheet?assetguid=3c16feb5-2ff7-4546-a254-e439f5e43f0d Description: IGBT 1200V 68A TO-220
Power - Max: 375 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 68 A
Part Status: Active
Gate Charge: 44 nC
Test Condition: 960V, 20A, 10Ohm, 15V
Switching Energy: 4.4mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 14ns/160ns
Supplier Device Package: TO-220 (IXYP)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Reverse Recovery Time (trr): 53 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXGM40N60 IXYS Description: IGBT 600V 75A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 250 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
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N0530YN250 IXYS Description: SCR 2.5KV 1040A W91
Voltage - Off State: 2.5 kV
Current - On State (It (RMS)) (Max): 1040 A
Supplier Device Package: W91
Current - Off State (Max): 70 mA
Voltage - On State (Vtm) (Max): 3.5 V
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 530 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -60°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Packaging: Box
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N1075LN180 IXYS Description: SCR 1.8KV 2415A
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IXYP20N120B4 IXYP20N120B4 IXYS littelfuse-discrete-igbts-ixy-20n120b4-datasheet?assetguid=aeb4cb01-5ee7-4115-97e3-a99b8c505c4e Description: IGBT 1200V 76A TO-220
Power - Max: 375 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 76 A
Part Status: Active
Gate Charge: 44 nC
Test Condition: 960V, 20A, 10Ohm, 15V
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 15ns/200ns
Supplier Device Package: TO-220 (IXYP)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Reverse Recovery Time (trr): 47 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXXH30N60C3 IXYS littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5 Description: IGBT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
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IXTA90N075T2-TRL IXTA90N075T2-TRL IXYS Description: MOSFET N-CH 75V 90A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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E1780TG65E E1780TG65E IXYS littelfuse_discrete_diodes_fast_recovery_e1780tg65e_datasheet.pdf.pdf Description: DIODE GEN PURP 3.6KV 1780A -
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IXTA200N055T2-7 IXYS Description: MOSFET N-CH 55V 200A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
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IXTA200N055T2-TRL IXTA200N055T2-TRL IXYS Description: MOSFET N-CH 55V 200A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
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IXBH42N300HV IXYS Description: DISC IGBT BIMSFT-VERYHIVOLT TO-2
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IXBH32N300HV IXYS media?resourcetype=datasheets&amp;itemid=1eb01c74-889c-4efa-95d9-e741e6c946af&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_32n300hv_datasheet.pdf Description: DISC IGBT BIMSFT-VERYHIVOLT TO-2
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247HV
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
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IXTN240N075L2 IXTN240N075L2 IXYS littelfuse-discrete-mosfets-ixtn240n075-datasheet?assetguid=9d96f440-24ed-44e0-aabd-3c9a5cde32ea Description: MOSFET N-CH 75V 225A SOT227B
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 3mA
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IXFH98N60X3 IXFH98N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh98n60x3_datasheet.pdf.pdf Description: MOSFET ULTRA JCT 600V 98A TO247
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IXFH78N60X3 IXFH78N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh78n60x3_datasheet.pdf.pdf Description: MOSFET ULTRA JCT 600V 78A TO247
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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CLA16E800PN IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA16E800PN.pdf Description: SCR 800V 16A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.14 V
Supplier Device Package: TO-220ABFP
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
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CLA16E1200PN CLA16E1200PN IXYS Littelfuse-Power-Semiconductors-CLA16E1200PN-Datasheet?assetguid=d60672de-ddba-4e11-8d6a-cf61d2811ac7 Description: SCR 1.2KV 16A TO-220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.14 V
Supplier Device Package: TO-220ABFP
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 1.2 kV
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DSB10P60PN DSB10P60PN IXYS Description: DIODE SCHOTTKY 60V 10A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 149pF @ 12V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220ABFP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
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M1494NC250 M1494NC250 IXYS Description: DIODE STANDARD 2500V 1494A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.9 µs
Technology: Standard
Current - Average Rectified (Io): 1494A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.34 V @ 4500 A
Current - Reverse Leakage @ Vr: 85 mA @ 2500 V
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M0659LC450 IXYS Description: FAST DIODE
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IXFA26N30X3 IXFA26N30X3 IXYS littelfuse-discrete-mosfets-ixf-26n30x3-datasheet?assetguid=878a0596-a6e9-4fba-b9d6-60f8987e5c06 Description: MOSFET N-CH 300V 26A TO263AA
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50+6.71 EUR
100+6.14 EUR
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ITF48IF1200HR ITF48IF1200HR IXYS media?resourcetype=datasheets&itemid=7cc07480-b755-4325-b4fc-520c77c2bae4&filename=littelfuse_discrete_igbts_xpt_itf48if1200hr_datasheet.pdf Description: IGBT TRENCH 1200V 72A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: ISO247
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 3mJ (on), 2.4mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 175 nC
Part Status: Active
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
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CS19-12HO1S-TRL CS19-12HO1S-TRL IXYS media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet Description: SCR 1.2KV 29A TO263
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 29 A
Part Status: Active
Supplier Device Package: TO-263AA
Current - Off State (Max): 5 mA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 19 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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CS19-12HO1S-TRL CS19-12HO1S-TRL IXYS media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet Description: SCR 1.2KV 29A TO263
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 29 A
Part Status: Active
Supplier Device Package: TO-263AA
Current - Off State (Max): 5 mA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 19 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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IXTA6N100D2-TRL IXTA6N100D2-TRL IXYS littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b Description: MOSFET N-CH 1000V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
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IXTA6N100D2HV IXTA6N100D2HV IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta6n100d2hv_datasheet.pdf?assetguid=d5edabee-7480-4970-a92b-1b6b944040ed Description: MOSFET N-CH 1000V 6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
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FII24N170AH1 IXYS FII24N170AH1.pdf Description: IGBT H BRIDGE 1700V 18A I4PAK4
Packaging: Tube
Package / Case: i4-Pac™-4, Isolated
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
NTC Thermistor: No
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.4 nF @ 25 V
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DPG20C400PC-TUB DPG20C400PC-TUB IXYS Description: POWER DIODE DISCRETES-FRED TO-26
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DPG20C400PC-TRL DPG20C400PC-TRL IXYS DPG20C400PC.pdf Description: DIODE ARRAY GP 400V 10A TO263
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MKE38RK600DFEL-TRR MKE38RK600DFEL-TRR IXYS littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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MKE38RK600DFEL-TRR MKE38RK600DFEL-TRR IXYS littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf Description: MOSFET N-CH 600V 50A SMPD
Packaging: Cut Tape (CT)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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IXFP130N15X3 IXFP130N15X3 IXYS DS100808B(IXFA-FP-FH130N15X3).pdf Description: MOSFET N-CH 150V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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MDMA120U1600VA MDMA120U1600VA IXYS Description: 3-PH. REC. BRIDGE, B6U
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 1.42 V @ 120 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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IXA70R1200NA IXA70R1200NA IXYS media?resourcetype=datasheets&itemid=fc5d3dbd-88b8-4127-8521-3b8c1f32f4ed&filename=littelfuse_discrete_igbts_xpt_ixa70r1200na_datasheet.pdf Description: DISC IGBT XPT-GENX3 SOT-227B(MIN
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 190 nC
Test Condition: 600V, 50A, 15Ohm, 15V
Switching Energy: 4.5mJ (on), 5.5mJ (off)
Td (on/off) @ 25°C: 70ns/250ns
IGBT Type: PT
Supplier Device Package: SOT-227B
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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R0577YC12E IXYS Description: SCR 1.2KV 1169A W58
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R0577YC12D IXYS Description: SCR 1.2KV 1169A W58
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R0577YC12C IXYS Description: SCR 1.2KV 1169A W58
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IXTL2N470 IXTL2N470 IXYS DS100759IXTL2N470.pdf Description: MOSFET N-CH 4700V 2A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 1A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4700 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V
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N4165EE450 IXYS Description: SCR 4.5KV W108
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IXYK120N120B3 IXYK120N120B3 IXYS littelfuse-discrete-igbts-ixy-120n120b3-datasheet?assetguid=18553f1c-eef0-4d23-a446-4aba83b01353 Description: IGBT PT 1200V 320A TO-264
Power - Max: 1500 W
Current - Collector Pulsed (Icm): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 320 A
Part Status: Active
Gate Charge: 400 nC
Test Condition: 960V, 100A, 1Ohm, 15V
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Td (on/off) @ 25°C: 30ns/340ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXYK)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Reverse Recovery Time (trr): 54 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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IXYK110N120C4 IXYK110N120C4 IXYS littelfuse-discrete-igbts-xpt-ixyk110n120c4-datasheet?assetguid=e811414b-e767-4e99-a24a-d3da268d9109 Description: IGBT 1200V 310A PLUS264
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 1360 W
Current - Collector Pulsed (Icm): 740 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 310 A
Part Status: Active
Gate Charge: 330 nC
Test Condition: 600V, 50A, 2Ohm, 15V
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 40ns/320ns
Supplier Device Package: PLUS264™
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Reverse Recovery Time (trr): 48 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
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IXYX110N120B4 IXYX110N120B4 IXYS littelfuse-discrete-igbts-xpt-ixyx110n120b4-datasheet?assetguid=3690078d-f346-41db-b4c2-00adc54c6541 Description: IGBT 1200V 340A PLUS247
Power - Max: 1360 W
Current - Collector Pulsed (Icm): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 340 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 600V, 50A, 2Ohm, 15V
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Td (on/off) @ 25°C: 45ns/390ns
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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IXYX110N120C4 IXYX110N120C4 IXYS littelfuse-discrete-igbts-xpt-ixyx110n120c4-datasheet?assetguid=9eb515e0-1e98-41ab-a832-9f7c6d9306a4 Description: IGBT 1200V 310A PLUS247
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Package / Case: TO-247-3 Variant
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 1360 W
Current - Collector Pulsed (Icm): 740 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 310 A
Part Status: Active
Gate Charge: 330 nC
Test Condition: 600V, 50A, 2Ohm, 15V
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 40ns/320ns
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Reverse Recovery Time (trr): 48 ns
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IXYK110N120B4 IXYK110N120B4 IXYS littelfuse-discrete-igbts-xpt-ixyk110n120b4-datasheet?assetguid=fd01dab2-a2c0-4beb-a09e-3281186f62f3 Description: IGBT 1200V 340A TO-264
Power - Max: 1360 W
Current - Collector Pulsed (Icm): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 340 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 600V, 50A, 2Ohm, 15V
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Td (on/off) @ 25°C: 45ns/390ns
Supplier Device Package: TO-264 (IXYK)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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IXYN110N120C4 IXYN110N120C4 IXYS littelfuse-discrete-igbts-xpt-ixyn110n120c4-datasheet?assetguid=56460bc8-cdd6-4f36-a01d-dfbb9fad811a Description: IGBT MOD 1200V 220A 830W SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5.42 nF @ 25 V
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IXYH55N120C4 IXYH55N120C4 IXYS media?resourcetype=datasheets&itemid=09ec817a-29e6-4554-80d0-ab94fd184b7f&filename=littelfuse-discrete-igbts-xpt-ixyh55n120c4-datasheet Description: IGBT 1200V 140A TO247
Power - Max: 650 W
Current - Collector Pulsed (Icm): 290 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 140 A
Part Status: Active
Gate Charge: 114 nC
Test Condition: 600V, 40A, 5Ohm, 15V
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Td (on/off) @ 25°C: 20ns/180ns
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXYH85N120C4 IXYH85N120C4 IXYS littelfuse-discrete-igbts-ixyh85n120c4-datasheet?assetguid=5d47d7d9-57ae-4f7e-a907-0f6fb1df1c9d Description: IGBT 1200V 240A TO-247
Switching Energy: 4.3mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 35ns/280ns
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Test Condition: 600V, 50A, 5Ohm, 15V
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 240 A
Part Status: Active
Gate Charge: 192 nC
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MDD26-16N1B MDD26-16N1B IXYS media?resourcetype=datasheets&itemid=C376EA2F-504E-4F0F-9FD3-4FD56272018D&filename=Littelfuse-Power-Semiconductors-MDD26-16N1B-Datasheet Description: DIODE MOD GP 1.6KV 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
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MDD600-14N1 IXYS Description: DIODE MODULE GEN PURP 1400V 883A
Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A
Voltage - DC Reverse (Vr) (Max): 1400 V
Operating Temperature - Junction: -40°C ~ 125°C
Current - Average Rectified (Io) (per Diode): 883A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 18 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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IXFA76N15T2-TRL IXFA76N15T2-TRL IXYS Description: MOSFET N-CH 150V 76A TO263
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DSS6-0045AS-TRL DSS6-0045AS-TRL IXYS media?resourcetype=datasheets&itemid=26f424a8-fa3a-4cf3-ac9d-39e46233ee00&filename=Power-Semiconductor-Discrete-Diode-DSS6-0045AS-Datasheet Description: DIODE SCHOTTKY 45V 6A TO252AA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 6A
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DSS6-0045AS-TRL DSS6-0045AS-TRL IXYS media?resourcetype=datasheets&itemid=26f424a8-fa3a-4cf3-ac9d-39e46233ee00&filename=Power-Semiconductor-Discrete-Diode-DSS6-0045AS-Datasheet Description: DIODE SCHOTTKY 45V 6A TO252AA
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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M2325HA400 M2325HA400 IXYS M2325HA400_450_DS.pdf Description: DIODE FAST RECOVERY 4000V 2325A
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M2325HA450 M2325HA450 IXYS M2325HA400_450_DS.pdf Description: DIODE FAST RECOVERY 4500V 2325A
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IXYH20N65B3 IXYS media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-247AD
Power - Max: 230 W
Current - Collector Pulsed (Icm): 108 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 58 A
Part Status: Active
Gate Charge: 29 nC
Test Condition: 400V, 20A, 20Ohm, 15V
Switching Energy: 500µJ (on), 450µJ (off)
Td (on/off) @ 25°C: 12ns/103ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXTA86N20T-TRL IXTA86N20T-TRL IXYS Description: MOSFET N-CH 200V 86A TO263
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MEA95-06DA MEA95-06DA IXYS Littelfuse-Power-Semiconductors-MEA95-06DA-MEK95-06DA-MEE95-06DA-Datasheet?assetguid=28370ac9-cdbf-432b-9115-f10f0447c92e Description: DIODE MODULE GP 600V 95A TO240AA
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 95A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
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CMA80E1600HB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA80E1600HB.pdf Description: SCR 1.6KV 126A TO247
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 126 A
Supplier Device Package: TO-247 (IXTH)
Voltage - On State (Vtm) (Max): 1.47 V
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 80 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Hold (Ih) (Max): 100 mA
Operating Temperature: -40°C ~ 150°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXTA08N100D2HV-TRL IXTA08N100D2HV-TRL IXYS littelfuse-discrete-mosfets-ixta08n100d2hv-datasheet?assetguid=23b14127-6bd0-4c59-8a5b-b6c34e880015 Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA1R6N100D2-TRL IXTA1R6N100D2-TRL IXYS Description: MOSFET N-CH 1000V 1.6A TO263
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IXYP20N120C4 littelfuse-discrete-igbts-ixy-20n120c4-datasheet?assetguid=3c16feb5-2ff7-4546-a254-e439f5e43f0d
IXYP20N120C4
Hersteller: IXYS
Description: IGBT 1200V 68A TO-220
Power - Max: 375 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 68 A
Part Status: Active
Gate Charge: 44 nC
Test Condition: 960V, 20A, 10Ohm, 15V
Switching Energy: 4.4mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 14ns/160ns
Supplier Device Package: TO-220 (IXYP)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Reverse Recovery Time (trr): 53 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXGM40N60
Hersteller: IXYS
Description: IGBT 600V 75A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 250 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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N0530YN250
Hersteller: IXYS
Description: SCR 2.5KV 1040A W91
Voltage - Off State: 2.5 kV
Current - On State (It (RMS)) (Max): 1040 A
Supplier Device Package: W91
Current - Off State (Max): 70 mA
Voltage - On State (Vtm) (Max): 3.5 V
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 530 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -60°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Packaging: Box
Produkt ist nicht verfügbar
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N1075LN180
Hersteller: IXYS
Description: SCR 1.8KV 2415A
auf Bestellung 6 Stücke:
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IXYP20N120B4 littelfuse-discrete-igbts-ixy-20n120b4-datasheet?assetguid=aeb4cb01-5ee7-4115-97e3-a99b8c505c4e
IXYP20N120B4
Hersteller: IXYS
Description: IGBT 1200V 76A TO-220
Power - Max: 375 W
Current - Collector Pulsed (Icm): 130 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 76 A
Part Status: Active
Gate Charge: 44 nC
Test Condition: 960V, 20A, 10Ohm, 15V
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Td (on/off) @ 25°C: 15ns/200ns
Supplier Device Package: TO-220 (IXYP)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Reverse Recovery Time (trr): 47 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXXH30N60C3 littelfuse-discrete-igbts-ixxh30n60c3-datasheet?assetguid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5
Hersteller: IXYS
Description: IGBT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
Produkt ist nicht verfügbar
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IXTA90N075T2-TRL
IXTA90N075T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 75V 90A TO263
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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E1780TG65E littelfuse_discrete_diodes_fast_recovery_e1780tg65e_datasheet.pdf.pdf
E1780TG65E
Hersteller: IXYS
Description: DIODE GEN PURP 3.6KV 1780A -
Produkt ist nicht verfügbar
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IXTA200N055T2-7
Hersteller: IXYS
Description: MOSFET N-CH 55V 200A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA200N055T2-TRL
IXTA200N055T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 55V 200A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
Produkt ist nicht verfügbar
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IXBH42N300HV
Hersteller: IXYS
Description: DISC IGBT BIMSFT-VERYHIVOLT TO-2
Produkt ist nicht verfügbar
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IXBH32N300HV media?resourcetype=datasheets&amp;itemid=1eb01c74-889c-4efa-95d9-e741e6c946af&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_32n300hv_datasheet.pdf
Hersteller: IXYS
Description: DISC IGBT BIMSFT-VERYHIVOLT TO-2
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247HV
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
Produkt ist nicht verfügbar
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IXTN240N075L2 littelfuse-discrete-mosfets-ixtn240n075-datasheet?assetguid=9d96f440-24ed-44e0-aabd-3c9a5cde32ea
IXTN240N075L2
Hersteller: IXYS
Description: MOSFET N-CH 75V 225A SOT227B
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 3mA
auf Bestellung 556 Stücke:
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1+110.96 EUR
10+84.67 EUR
100+76.58 EUR
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IXFH98N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh98n60x3_datasheet.pdf.pdf
IXFH98N60X3
Hersteller: IXYS
Description: MOSFET ULTRA JCT 600V 98A TO247
auf Bestellung 194 Stücke:
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1+34.22 EUR
10+31.44 EUR
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IXFH78N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh78n60x3_datasheet.pdf.pdf
IXFH78N60X3
Hersteller: IXYS
Description: MOSFET ULTRA JCT 600V 78A TO247
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 780W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 39A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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1+28.3 EUR
10+24.92 EUR
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CLA16E800PN Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA16E800PN.pdf
Hersteller: IXYS
Description: SCR 800V 16A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.14 V
Supplier Device Package: TO-220ABFP
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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CLA16E1200PN Littelfuse-Power-Semiconductors-CLA16E1200PN-Datasheet?assetguid=d60672de-ddba-4e11-8d6a-cf61d2811ac7
CLA16E1200PN
Hersteller: IXYS
Description: SCR 1.2KV 16A TO-220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.14 V
Supplier Device Package: TO-220ABFP
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 1.2 kV
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4+6.81 EUR
50+3.44 EUR
100+3.12 EUR
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DSB10P60PN
DSB10P60PN
Hersteller: IXYS
Description: DIODE SCHOTTKY 60V 10A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 149pF @ 12V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220ABFP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Produkt ist nicht verfügbar
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M1494NC250
M1494NC250
Hersteller: IXYS
Description: DIODE STANDARD 2500V 1494A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.9 µs
Technology: Standard
Current - Average Rectified (Io): 1494A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.34 V @ 4500 A
Current - Reverse Leakage @ Vr: 85 mA @ 2500 V
Produkt ist nicht verfügbar
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M0659LC450
Hersteller: IXYS
Description: FAST DIODE
auf Bestellung 12 Stücke:
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IXFA26N30X3 littelfuse-discrete-mosfets-ixf-26n30x3-datasheet?assetguid=878a0596-a6e9-4fba-b9d6-60f8987e5c06
IXFA26N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 26A TO263AA
auf Bestellung 629 Stücke:
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2+12.61 EUR
10+8.48 EUR
50+6.71 EUR
100+6.14 EUR
500+5.14 EUR
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ITF48IF1200HR media?resourcetype=datasheets&itemid=7cc07480-b755-4325-b4fc-520c77c2bae4&filename=littelfuse_discrete_igbts_xpt_itf48if1200hr_datasheet.pdf
ITF48IF1200HR
Hersteller: IXYS
Description: IGBT TRENCH 1200V 72A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: ISO247
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 3mJ (on), 2.4mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 175 nC
Part Status: Active
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Produkt ist nicht verfügbar
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CS19-12HO1S-TRL media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet
CS19-12HO1S-TRL
Hersteller: IXYS
Description: SCR 1.2KV 29A TO263
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 29 A
Part Status: Active
Supplier Device Package: TO-263AA
Current - Off State (Max): 5 mA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 19 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CS19-12HO1S-TRL media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet
CS19-12HO1S-TRL
Hersteller: IXYS
Description: SCR 1.2KV 29A TO263
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 29 A
Part Status: Active
Supplier Device Package: TO-263AA
Current - Off State (Max): 5 mA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 19 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 644 Stücke:
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2+11.13 EUR
10+7.41 EUR
100+5.31 EUR
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IXTA6N100D2-TRL littelfuse-discrete-mosfets-ixt-6n100-datasheet?assetguid=c49ba42b-7a18-44bb-be04-da2e6496f67b
IXTA6N100D2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1000V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA6N100D2HV littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta6n100d2hv_datasheet.pdf?assetguid=d5edabee-7480-4970-a92b-1b6b944040ed
IXTA6N100D2HV
Hersteller: IXYS
Description: MOSFET N-CH 1000V 6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
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300+15.95 EUR
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FII24N170AH1 FII24N170AH1.pdf
Hersteller: IXYS
Description: IGBT H BRIDGE 1700V 18A I4PAK4
Packaging: Tube
Package / Case: i4-Pac™-4, Isolated
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
NTC Thermistor: No
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.4 nF @ 25 V
Produkt ist nicht verfügbar
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DPG20C400PC-TUB
DPG20C400PC-TUB
Hersteller: IXYS
Description: POWER DIODE DISCRETES-FRED TO-26
Produkt ist nicht verfügbar
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DPG20C400PC-TRL DPG20C400PC.pdf
DPG20C400PC-TRL
Hersteller: IXYS
Description: DIODE ARRAY GP 400V 10A TO263
Produkt ist nicht verfügbar
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MKE38RK600DFEL-TRR littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf
MKE38RK600DFEL-TRR
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
auf Bestellung 200 Stücke:
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AnzahlPrivatkunde
200+49.75 EUR
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MKE38RK600DFEL-TRR littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf
MKE38RK600DFEL-TRR
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Cut Tape (CT)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
auf Bestellung 200 Stücke:
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AnzahlPrivatkunde
1+74.83 EUR
10+55.61 EUR
100+49.75 EUR
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IXFP130N15X3 DS100808B(IXFA-FP-FH130N15X3).pdf
IXFP130N15X3
Hersteller: IXYS
Description: MOSFET N-CH 150V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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MDMA120U1600VA
MDMA120U1600VA
Hersteller: IXYS
Description: 3-PH. REC. BRIDGE, B6U
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 1.42 V @ 120 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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IXA70R1200NA media?resourcetype=datasheets&itemid=fc5d3dbd-88b8-4127-8521-3b8c1f32f4ed&filename=littelfuse_discrete_igbts_xpt_ixa70r1200na_datasheet.pdf
IXA70R1200NA
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 SOT-227B(MIN
Power - Max: 350 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 190 nC
Test Condition: 600V, 50A, 15Ohm, 15V
Switching Energy: 4.5mJ (on), 5.5mJ (off)
Td (on/off) @ 25°C: 70ns/250ns
IGBT Type: PT
Supplier Device Package: SOT-227B
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Input Type: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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R0577YC12E
Hersteller: IXYS
Description: SCR 1.2KV 1169A W58
Produkt ist nicht verfügbar
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R0577YC12D
Hersteller: IXYS
Description: SCR 1.2KV 1169A W58
Produkt ist nicht verfügbar
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R0577YC12C
Hersteller: IXYS
Description: SCR 1.2KV 1169A W58
Produkt ist nicht verfügbar
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IXTL2N470 DS100759IXTL2N470.pdf
IXTL2N470
Hersteller: IXYS
Description: MOSFET N-CH 4700V 2A I5PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 1A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 6V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4700 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V
Produkt ist nicht verfügbar
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N4165EE450
Hersteller: IXYS
Description: SCR 4.5KV W108
Produkt ist nicht verfügbar
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IXYK120N120B3 littelfuse-discrete-igbts-ixy-120n120b3-datasheet?assetguid=18553f1c-eef0-4d23-a446-4aba83b01353
IXYK120N120B3
Hersteller: IXYS
Description: IGBT PT 1200V 320A TO-264
Power - Max: 1500 W
Current - Collector Pulsed (Icm): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 320 A
Part Status: Active
Gate Charge: 400 nC
Test Condition: 960V, 100A, 1Ohm, 15V
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Td (on/off) @ 25°C: 30ns/340ns
IGBT Type: PT
Supplier Device Package: TO-264 (IXYK)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Reverse Recovery Time (trr): 54 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXYK110N120C4 littelfuse-discrete-igbts-xpt-ixyk110n120c4-datasheet?assetguid=e811414b-e767-4e99-a24a-d3da268d9109
IXYK110N120C4
Hersteller: IXYS
Description: IGBT 1200V 310A PLUS264
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Power - Max: 1360 W
Current - Collector Pulsed (Icm): 740 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 310 A
Part Status: Active
Gate Charge: 330 nC
Test Condition: 600V, 50A, 2Ohm, 15V
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 40ns/320ns
Supplier Device Package: PLUS264™
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Reverse Recovery Time (trr): 48 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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IXYX110N120B4 littelfuse-discrete-igbts-xpt-ixyx110n120b4-datasheet?assetguid=3690078d-f346-41db-b4c2-00adc54c6541
IXYX110N120B4
Hersteller: IXYS
Description: IGBT 1200V 340A PLUS247
Power - Max: 1360 W
Current - Collector Pulsed (Icm): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 340 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 600V, 50A, 2Ohm, 15V
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Td (on/off) @ 25°C: 45ns/390ns
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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IXYX110N120C4 littelfuse-discrete-igbts-xpt-ixyx110n120c4-datasheet?assetguid=9eb515e0-1e98-41ab-a832-9f7c6d9306a4
IXYX110N120C4
Hersteller: IXYS
Description: IGBT 1200V 310A PLUS247
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Package / Case: TO-247-3 Variant
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 1360 W
Current - Collector Pulsed (Icm): 740 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 310 A
Part Status: Active
Gate Charge: 330 nC
Test Condition: 600V, 50A, 2Ohm, 15V
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Td (on/off) @ 25°C: 40ns/320ns
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Reverse Recovery Time (trr): 48 ns
Produkt ist nicht verfügbar
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IXYK110N120B4 littelfuse-discrete-igbts-xpt-ixyk110n120b4-datasheet?assetguid=fd01dab2-a2c0-4beb-a09e-3281186f62f3
IXYK110N120B4
Hersteller: IXYS
Description: IGBT 1200V 340A TO-264
Power - Max: 1360 W
Current - Collector Pulsed (Icm): 800 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 340 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 600V, 50A, 2Ohm, 15V
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Td (on/off) @ 25°C: 45ns/390ns
Supplier Device Package: TO-264 (IXYK)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
auf Bestellung 231 Stücke:
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1+43.04 EUR
25+28.02 EUR
100+25.55 EUR
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IXYN110N120C4 littelfuse-discrete-igbts-xpt-ixyn110n120c4-datasheet?assetguid=56460bc8-cdd6-4f36-a01d-dfbb9fad811a
IXYN110N120C4
Hersteller: IXYS
Description: IGBT MOD 1200V 220A 830W SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5.42 nF @ 25 V
auf Bestellung 369 Stücke:
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1+74.14 EUR
10+55.18 EUR
100+46.8 EUR
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IXYH55N120C4 media?resourcetype=datasheets&itemid=09ec817a-29e6-4554-80d0-ab94fd184b7f&filename=littelfuse-discrete-igbts-xpt-ixyh55n120c4-datasheet
IXYH55N120C4
Hersteller: IXYS
Description: IGBT 1200V 140A TO247
Power - Max: 650 W
Current - Collector Pulsed (Icm): 290 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 140 A
Part Status: Active
Gate Charge: 114 nC
Test Condition: 600V, 40A, 5Ohm, 15V
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Td (on/off) @ 25°C: 20ns/180ns
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 210 Stücke:
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2+18.22 EUR
30+10.71 EUR
120+9.06 EUR
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IXYH85N120C4 littelfuse-discrete-igbts-ixyh85n120c4-datasheet?assetguid=5d47d7d9-57ae-4f7e-a907-0f6fb1df1c9d
IXYH85N120C4
Hersteller: IXYS
Description: IGBT 1200V 240A TO-247
Switching Energy: 4.3mJ (on), 2mJ (off)
Td (on/off) @ 25°C: 35ns/280ns
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Test Condition: 600V, 50A, 5Ohm, 15V
Power - Max: 1150 W
Current - Collector Pulsed (Icm): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 240 A
Part Status: Active
Gate Charge: 192 nC
auf Bestellung 252 Stücke:
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1+28.42 EUR
30+17.48 EUR
120+15.09 EUR
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MDD26-16N1B media?resourcetype=datasheets&itemid=C376EA2F-504E-4F0F-9FD3-4FD56272018D&filename=Littelfuse-Power-Semiconductors-MDD26-16N1B-Datasheet
MDD26-16N1B
Hersteller: IXYS
Description: DIODE MOD GP 1.6KV 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
auf Bestellung 262 Stücke:
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1+48.22 EUR
36+33.34 EUR
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MDD600-14N1
Hersteller: IXYS
Description: DIODE MODULE GEN PURP 1400V 883A
Current - Reverse Leakage @ Vr: 50 mA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1800 A
Voltage - DC Reverse (Vr) (Max): 1400 V
Operating Temperature - Junction: -40°C ~ 125°C
Current - Average Rectified (Io) (per Diode): 883A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 18 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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IXFA76N15T2-TRL
IXFA76N15T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 150V 76A TO263
Produkt ist nicht verfügbar
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DSS6-0045AS-TRL media?resourcetype=datasheets&itemid=26f424a8-fa3a-4cf3-ac9d-39e46233ee00&filename=Power-Semiconductor-Discrete-Diode-DSS6-0045AS-Datasheet
DSS6-0045AS-TRL
Hersteller: IXYS
Description: DIODE SCHOTTKY 45V 6A TO252AA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 6A
Produkt ist nicht verfügbar
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DSS6-0045AS-TRL media?resourcetype=datasheets&itemid=26f424a8-fa3a-4cf3-ac9d-39e46233ee00&filename=Power-Semiconductor-Discrete-Diode-DSS6-0045AS-Datasheet
DSS6-0045AS-TRL
Hersteller: IXYS
Description: DIODE SCHOTTKY 45V 6A TO252AA
Current - Reverse Leakage @ Vr: 300 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 6A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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M2325HA400 M2325HA400_450_DS.pdf
M2325HA400
Hersteller: IXYS
Description: DIODE FAST RECOVERY 4000V 2325A
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
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M2325HA450 M2325HA400_450_DS.pdf
M2325HA450
Hersteller: IXYS
Description: DIODE FAST RECOVERY 4500V 2325A
Produkt ist nicht verfügbar
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IXYH20N65B3 media?resourcetype=datasheets&amp;itemid=1ada074a-a195-4f5e-bc03-b3cf3a2bd9e1&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n65b3_datasheet.pdf
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Power - Max: 230 W
Current - Collector Pulsed (Icm): 108 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 58 A
Part Status: Active
Gate Charge: 29 nC
Test Condition: 400V, 20A, 20Ohm, 15V
Switching Energy: 500µJ (on), 450µJ (off)
Td (on/off) @ 25°C: 12ns/103ns
IGBT Type: PT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTA86N20T-TRL
IXTA86N20T-TRL
Hersteller: IXYS
Description: MOSFET N-CH 200V 86A TO263
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MEA95-06DA Littelfuse-Power-Semiconductors-MEA95-06DA-MEK95-06DA-MEE95-06DA-Datasheet?assetguid=28370ac9-cdbf-432b-9115-f10f0447c92e
MEA95-06DA
Hersteller: IXYS
Description: DIODE MODULE GP 600V 95A TO240AA
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 95A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
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CMA80E1600HB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA80E1600HB.pdf
Hersteller: IXYS
Description: SCR 1.6KV 126A TO247
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 126 A
Supplier Device Package: TO-247 (IXTH)
Voltage - On State (Vtm) (Max): 1.47 V
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (AV)) (Max): 80 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Hold (Ih) (Max): 100 mA
Operating Temperature: -40°C ~ 150°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 1805 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.28 EUR
10+12.25 EUR
100+10.2 EUR
500+9.01 EUR
1000+8.1 EUR
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IXTA08N100D2HV-TRL littelfuse-discrete-mosfets-ixta08n100d2hv-datasheet?assetguid=23b14127-6bd0-4c59-8a5b-b6c34e880015
IXTA08N100D2HV-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
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IXTA1R6N100D2-TRL
IXTA1R6N100D2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.6A TO263
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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