IXFN70N120SK IXYS

Description: SICFET N-CH 1200V 68A SOT227B, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Active, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4V @ 15mA, Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V.