MCNA120UI2200PED IXYS
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: 3-phase diode-thyristor bridge; boost chopper
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Case: E2-Pack
Mechanical mounting: screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: 3-phase diode-thyristor bridge; boost chopper
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 150A
Anzahl je Verpackung: 1 Stücke
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Technische Details MCNA120UI2200PED IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw, Max. off-state voltage: 1.7kV, Electrical mounting: Press-in PCB, Case: E2-Pack, Mechanical mounting: screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: 3-phase diode-thyristor bridge; boost chopper, Gate-emitter voltage: ±20V, Collector current: 80A, Pulsed collector current: 150A, Anzahl je Verpackung: 1 Stücke.
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| MCNA120UI2200PED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Max. off-state voltage: 1.7kV Electrical mounting: Press-in PCB Case: E2-Pack Mechanical mounting: screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: 3-phase diode-thyristor bridge; boost chopper Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 150A |
Produkt ist nicht verfügbar |