
IXFQ72N30X3 IXYS


Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 82nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 100ns
Drain-source voltage: 300V
Drain current: 72A
On-state resistance: 19mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
6+ | 13.27 EUR |
8+ | 8.99 EUR |
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Technische Details IXFQ72N30X3 IXYS
Description: MOSFET N-CH 300V 72A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V.
Weitere Produktangebote IXFQ72N30X3 nach Preis ab 8.99 EUR bis 18.59 EUR
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IXFQ72N30X3 | Hersteller : IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 72A; 390W; TO3P Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Gate charge: 82nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO3P Reverse recovery time: 100ns Drain-source voltage: 300V Drain current: 72A On-state resistance: 19mΩ |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFQ72N30X3 | Hersteller : IXYS |
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auf Bestellung 292 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFQ72N30X3 | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
auf Bestellung 816 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFQ72N30X3 | Hersteller : Littelfuse |
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