Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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M2325HA450 | IXYS | Description: DIODE FAST RECOVERY 4500V 2325A |
Produkt ist nicht verfügbar |
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IXYH20N65B3 | IXYS |
Description: DISC IGBT XPT-GENX3 TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 12ns/103ns Switching Energy: 500µJ (on), 450µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 29 nC Part Status: Active Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 108 A Power - Max: 230 W |
Produkt ist nicht verfügbar |
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IXTA60N20X4 | IXYS |
Description: MOSFET ULTRA X4 200V 60A TO-263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (IXTA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V |
auf Bestellung 1667 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA86N20T-TRL | IXYS | Description: MOSFET N-CH 200V 86A TO263 |
Produkt ist nicht verfügbar |
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MEA95-06DA | IXYS | Description: DIODE MODULE 600V 95A TO240AA |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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CMA80E1600HB | IXYS |
Description: SCR 1.6KV 126A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 80 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A Current - On State (It (AV)) (Max): 80 A Voltage - Gate Trigger (Vgt) (Max): 1.4 V Voltage - On State (Vtm) (Max): 1.47 V Supplier Device Package: TO-247 (IXTH) Current - On State (It (RMS)) (Max): 126 A Voltage - Off State: 1.6 kV |
auf Bestellung 1805 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA1R6N100D2HV | IXYS |
Description: MOSFET N-CH 1000V 1.6A TO263HV Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-263HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V |
auf Bestellung 239 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA08N100D2HV-TRL | IXYS |
Description: MOSFET N-CH 1000V 800MA TO263HV Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tj) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: TO-263HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA1R6N100D2-TRL | IXYS |
Description: MOSFET N-CH 1000V 1.6A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTY1R6N100D2-TRL | IXYS |
Description: MOSFET N-CH 1000V 1.6A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA3N50D2-TRL | IXYS |
Description: MOSFET N-CH 500V 3A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V FET Feature: Depletion Mode Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFQ72N30X3 | IXYS |
Description: MOSFET N-CH 300V 72A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V |
auf Bestellung 816 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGA20N250HV | IXYS | Description: DISC IGBT NPT-VERY HI VOLTAGE TO |
Produkt ist nicht verfügbar |
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IXGA20N250HV-TRL | IXYS | Description: DISC IGBT NPT VERY HI VOLTAGE TO |
Produkt ist nicht verfügbar |
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MCC700-16IO1W-T | IXYS | Description: MOD SCR THYRISTOR 1600V |
Produkt ist nicht verfügbar |
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MCMA110P1800TA | IXYS |
Description: SCR MODULE 1.8KV 110A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 110 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 200 A Voltage - Off State: 1.8 kV |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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MCMA700P1600CA | IXYS | Description: SCR MODULE 1.6KV 700A COMPACK |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH20N120C4 | IXYS |
Description: IGBT DISCRETE TO-247 Packaging: Tube |
Produkt ist nicht verfügbar |
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MCMA400PD1600PTSF | IXYS | Description: SCR MODULE 1.6KV 400A SIMBUS F |
Produkt ist nicht verfügbar |
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MDMA600P1600PTSF | IXYS | Description: BIPOLAR MODULE - DIODE SIMBUS F- |
Produkt ist nicht verfügbar |
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MDNA425P2200PTSF | IXYS | Description: BIPOLAR MODULE - DIODE SIMBUS F- |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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MDNA300P2200PTSF | IXYS | Description: BIPOLAR MODULE - DIODE SIMBUS F- |
Produkt ist nicht verfügbar |
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MDNA600P2200PTSF | IXYS | Description: BIPOLAR MODULE - DIODE SIMBUS F- |
Produkt ist nicht verfügbar |
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MCMA550PD1600PTSF | IXYS | Description: SCR MODULE 1.6KV SIMBUS F |
Produkt ist nicht verfügbar |
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MDNA360UB2200PTED | IXYS |
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2 Packaging: Tray Package / Case: E2 Mounting Type: Chassis Mount Diode Type: Three Phase (Braking) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: E2 Voltage - Peak Reverse (Max): 1.7 kV Current - Average Rectified (Io): 360 A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A Current - Reverse Leakage @ Vr: 200 µA @ 1700 V |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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MDNA240U2200ED | IXYS |
Description: BIPOLARMODULE-BRIDGERECTIFIER E2 Packaging: Box Package / Case: E2 Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: E2 Part Status: Active Voltage - Peak Reverse (Max): 2.2 kV Current - Average Rectified (Io): 240 A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 240 A Current - Reverse Leakage @ Vr: 200 µA @ 2200 V |
Produkt ist nicht verfügbar |
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MDMA450UB1600PTED | IXYS | Description: BIPOLARMODULE-RECTIFIER+BRAKE E2 |
Produkt ist nicht verfügbar |
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MDMA280UB1600PTED | IXYS | Description: BIPOLARMODULE-RECTIFIER+BRAKE E2 |
Produkt ist nicht verfügbar |
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MDMA240UB1600ED | IXYS | Description: BIPOLARMODULE-RECTIFIER+BRAKE E2 |
Produkt ist nicht verfügbar |
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MDMA210UB1600PTED | IXYS | Description: BIPOLARMODULE-RECTIFIER+BRAKE E2 |
Produkt ist nicht verfügbar |
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MDMA360UB1600PTED | IXYS | Description: BIPOLARMODULE-RECTIFIER+BRAKE E2 |
Produkt ist nicht verfügbar |
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MCMA240UI1600PED | IXYS | Description: SCR MODULE 1.6KV 88A E2 PACK |
Produkt ist nicht verfügbar |
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MCMA240UI1600ED | IXYS | Description: SCR MODULE 1.6KV 240A E2 PACK |
Produkt ist nicht verfügbar |
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VVZB170-16IOXT-PFP | IXYS |
Description: BIPOLAR MODULE-THYRISTOR/DIODE E Packaging: Bulk Package / Case: E2 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 95 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A Number of SCRs, Diodes: 3 SCRs, 3 Diodes Current - On State (It (AV)) (Max): 48 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 200 A Voltage - Off State: 1.6 kV |
Produkt ist nicht verfügbar |
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MCNA120UI2200PED | IXYS | Description: BIPOLAR MODULE - THYRISTOR E2-P |
Produkt ist nicht verfügbar |
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N2543ZD300 | IXYS |
Description: SCR 3KV W46 Packaging: Box Package / Case: TO-200AF Mounting Type: Chassis Mount SCR Type: Standard Recovery Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz Current - On State (It (AV)) (Max): 2543 A Supplier Device Package: W46 Voltage - Off State: 3 kV |
Produkt ist nicht verfügbar |
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N2418ZD300 | IXYS |
Description: SCR 3KV W46 Packaging: Box Package / Case: TO-200AF Mounting Type: Chassis Mount SCR Type: Standard Recovery Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz Current - On State (It (AV)) (Max): 2418 A Supplier Device Package: W46 Voltage - Off State: 3 kV |
Produkt ist nicht verfügbar |
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DPG60B600LB-TRR | IXYS |
Description: BIPOLAR MODULE-BRIDGE RECTIFIER Packaging: Tape & Reel (TR) Package / Case: 9-PowerSMD Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: 9-SMPD-B Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 60 A Voltage - Forward (Vf) (Max) @ If: 3.19 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
Produkt ist nicht verfügbar |
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DPG60B600LB-TUB | IXYS |
Description: BIPOLAR MODULE-BRIDGE RECTIFIER Packaging: Tube Package / Case: 9-PowerSMD Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Standard Supplier Device Package: 9-SMPD-B Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 60 A Voltage - Forward (Vf) (Max) @ If: 3.19 V @ 60 A Current - Reverse Leakage @ Vr: 250 µA @ 600 V |
Produkt ist nicht verfügbar |
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IXFN70N120SK | IXYS |
Description: SICFET N-CH 1200V 68A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Vgs(th) (Max) @ Id: 4V @ 15mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V |
Produkt ist nicht verfügbar |
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CS19-08HO1S-TRL | IXYS |
Description: SCR 800V 29A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 28 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A Current - On State (It (AV)) (Max): 13 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 5 mA Supplier Device Package: TO-263AA Part Status: Active Current - On State (It (RMS)) (Max): 29 A Voltage - Off State: 800 V |
Produkt ist nicht verfügbar |
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CS19-08HO1S-TRL | IXYS |
Description: SCR 800V 29A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 28 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A Current - On State (It (AV)) (Max): 13 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 5 mA Supplier Device Package: TO-263AA Part Status: Active Current - On State (It (RMS)) (Max): 29 A Voltage - Off State: 800 V |
auf Bestellung 770 Stücke: Lieferzeit 10-14 Tag (e) |
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N1449QL200 | IXYS |
Description: SCR 2KV 2790A WP6 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz Current - On State (It (AV)) (Max): 1410 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.65 V Current - Off State (Max): 100 mA Supplier Device Package: WP6 Current - On State (It (RMS)) (Max): 2790 A Voltage - Off State: 2 kV |
Produkt ist nicht verfügbar |
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DPG60C300PC-TRL | IXYS |
Description: DIODE ARRAY GP 300V 30A TO263AA Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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DPG60C300PC-TRL | IXYS |
Description: DIODE ARRAY GP 300V 30A TO263AA Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A Current - Reverse Leakage @ Vr: 1 µA @ 300 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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CS19-08HO1S-TUB | IXYS |
Description: SCR 800V 31A TO263 Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 28 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A Current - On State (It (AV)) (Max): 20 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.32 V Current - Off State (Max): 50 µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Current - On State (It (RMS)) (Max): 31 A Voltage - Off State: 800 V |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA90N20X3-TRL | IXYS |
Description: MOSFET N-CH 200V 90A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V |
Produkt ist nicht verfügbar |
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MDD72-16N1B | IXYS |
Description: DIODE MOD GP 1600V 113A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 113A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A Current - Reverse Leakage @ Vr: 15 mA @ 1600 V |
Produkt ist nicht verfügbar |
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MDD72-08N1B | IXYS |
Description: DIODE MOD GP 800V 113A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 113A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A Current - Reverse Leakage @ Vr: 15 mA @ 800 V |
Produkt ist nicht verfügbar |
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IXTD4N80P-3J | IXYS | Description: MOSFET N-CH 800V 3.6A DIE |
Produkt ist nicht verfügbar |
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M0790YC200 | IXYS | Description: FAST DIODE |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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W1263YC250 | IXYS | Description: RECTIFIER DIODE |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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W1263YC160 | IXYS | Description: RECTIFIER DIODE |
Produkt ist nicht verfügbar |
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IXTX240N075L2 | IXYS | Description: MOSFET N-CH 75V 240A PLUS247-3 |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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MDD44-14N1B | IXYS |
Description: DIODE MOD GP 1.4KV 64A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 1400 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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MDD44-18N1B | IXYS |
Description: DIODE MOD GP 1800V 64A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 1800 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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MDD44-12N1B | IXYS |
Description: DIODE MOD GP 1.2KV 64A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 1200 V |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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MDD44-08N1B | IXYS |
Description: DIODE MODULE GP 800V 64A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 64A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A Current - Reverse Leakage @ Vr: 10 mA @ 800 V |
Produkt ist nicht verfügbar |
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MCNA120PD2200TB-NI | IXYS |
Description: BIPOLAR MODULE THYRISTOR/DIODE T Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 120 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 190 A Voltage - Off State: 2.2 kV |
Produkt ist nicht verfügbar |
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MCNA120PD2200TB | IXYS |
Description: BIPOLAR MODULE - THYRISTOR TO-2 Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 120 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 190 A Voltage - Off State: 2.2 kV |
Produkt ist nicht verfügbar |
IXYH20N65B3 |
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
Produkt ist nicht verfügbar
IXTA60N20X4 |
Hersteller: IXYS
Description: MOSFET ULTRA X4 200V 60A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
Description: MOSFET ULTRA X4 200V 60A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 30A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 1667 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.02 EUR |
50+ | 14.39 EUR |
100+ | 12.87 EUR |
500+ | 11.36 EUR |
1000+ | 10.22 EUR |
MEA95-06DA |
Hersteller: IXYS
Description: DIODE MODULE 600V 95A TO240AA
Description: DIODE MODULE 600V 95A TO240AA
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 54.45 EUR |
10+ | 50.23 EUR |
CMA80E1600HB |
Hersteller: IXYS
Description: SCR 1.6KV 126A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - On State (Vtm) (Max): 1.47 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 126A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 720A, 780A
Current - On State (It (AV)) (Max): 80 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - On State (Vtm) (Max): 1.47 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 126 A
Voltage - Off State: 1.6 kV
auf Bestellung 1805 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 12 EUR |
10+ | 10.29 EUR |
100+ | 8.57 EUR |
500+ | 7.57 EUR |
1000+ | 6.81 EUR |
IXTA1R6N100D2HV |
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V
Description: MOSFET N-CH 1000V 1.6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 8.94 EUR |
50+ | 7.08 EUR |
100+ | 6.07 EUR |
IXTA08N100D2HV-TRL |
Hersteller: IXYS
Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Description: MOSFET N-CH 1000V 800MA TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
IXTA1R6N100D2-TRL |
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Description: MOSFET N-CH 1000V 1.6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Produkt ist nicht verfügbar
IXTY1R6N100D2-TRL |
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Description: MOSFET N-CH 1000V 1.6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Produkt ist nicht verfügbar
IXTA3N50D2-TRL |
Hersteller: IXYS
Description: MOSFET N-CH 500V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Description: MOSFET N-CH 500V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Produkt ist nicht verfügbar
IXFQ72N30X3 |
Hersteller: IXYS
Description: MOSFET N-CH 300V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Description: MOSFET N-CH 300V 72A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.59 EUR |
10+ | 15.93 EUR |
100+ | 13.27 EUR |
500+ | 11.71 EUR |
IXGA20N250HV |
Hersteller: IXYS
Description: DISC IGBT NPT-VERY HI VOLTAGE TO
Description: DISC IGBT NPT-VERY HI VOLTAGE TO
Produkt ist nicht verfügbar
IXGA20N250HV-TRL |
Hersteller: IXYS
Description: DISC IGBT NPT VERY HI VOLTAGE TO
Description: DISC IGBT NPT VERY HI VOLTAGE TO
Produkt ist nicht verfügbar
MCMA110P1800TA |
Hersteller: IXYS
Description: SCR MODULE 1.8KV 110A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 200 A
Voltage - Off State: 1.8 kV
Description: SCR MODULE 1.8KV 110A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 200 A
Voltage - Off State: 1.8 kV
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 61.93 EUR |
36+ | 51.9 EUR |
MCMA700P1600CA |
Hersteller: IXYS
Description: SCR MODULE 1.6KV 700A COMPACK
Description: SCR MODULE 1.6KV 700A COMPACK
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 386.83 EUR |
IXYH20N120C4 |
Produkt ist nicht verfügbar
MCMA400PD1600PTSF |
Hersteller: IXYS
Description: SCR MODULE 1.6KV 400A SIMBUS F
Description: SCR MODULE 1.6KV 400A SIMBUS F
Produkt ist nicht verfügbar
MDMA600P1600PTSF |
Hersteller: IXYS
Description: BIPOLAR MODULE - DIODE SIMBUS F-
Description: BIPOLAR MODULE - DIODE SIMBUS F-
Produkt ist nicht verfügbar
MDNA425P2200PTSF |
Hersteller: IXYS
Description: BIPOLAR MODULE - DIODE SIMBUS F-
Description: BIPOLAR MODULE - DIODE SIMBUS F-
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 266.17 EUR |
MDNA300P2200PTSF |
Hersteller: IXYS
Description: BIPOLAR MODULE - DIODE SIMBUS F-
Description: BIPOLAR MODULE - DIODE SIMBUS F-
Produkt ist nicht verfügbar
MDNA600P2200PTSF |
Hersteller: IXYS
Description: BIPOLAR MODULE - DIODE SIMBUS F-
Description: BIPOLAR MODULE - DIODE SIMBUS F-
Produkt ist nicht verfügbar
MCMA550PD1600PTSF |
Hersteller: IXYS
Description: SCR MODULE 1.6KV SIMBUS F
Description: SCR MODULE 1.6KV SIMBUS F
Produkt ist nicht verfügbar
MDNA360UB2200PTED |
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Packaging: Tray
Package / Case: E2
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E2
Voltage - Peak Reverse (Max): 1.7 kV
Current - Average Rectified (Io): 360 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Packaging: Tray
Package / Case: E2
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E2
Voltage - Peak Reverse (Max): 1.7 kV
Current - Average Rectified (Io): 360 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 317.93 EUR |
10+ | 297.78 EUR |
28+ | 286.58 EUR |
MDNA240U2200ED |
Hersteller: IXYS
Description: BIPOLARMODULE-BRIDGERECTIFIER E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E2
Part Status: Active
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 240 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 240 A
Current - Reverse Leakage @ Vr: 200 µA @ 2200 V
Description: BIPOLARMODULE-BRIDGERECTIFIER E2
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E2
Part Status: Active
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 240 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 240 A
Current - Reverse Leakage @ Vr: 200 µA @ 2200 V
Produkt ist nicht verfügbar
MDMA450UB1600PTED |
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
MDMA280UB1600PTED |
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
MDMA240UB1600ED |
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
MDMA210UB1600PTED |
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
MDMA360UB1600PTED |
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
MCMA240UI1600PED |
Hersteller: IXYS
Description: SCR MODULE 1.6KV 88A E2 PACK
Description: SCR MODULE 1.6KV 88A E2 PACK
Produkt ist nicht verfügbar
MCMA240UI1600ED |
Hersteller: IXYS
Description: SCR MODULE 1.6KV 240A E2 PACK
Description: SCR MODULE 1.6KV 240A E2 PACK
Produkt ist nicht verfügbar
VVZB170-16IOXT-PFP |
Hersteller: IXYS
Description: BIPOLAR MODULE-THYRISTOR/DIODE E
Packaging: Bulk
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Current - On State (It (AV)) (Max): 48 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 200 A
Voltage - Off State: 1.6 kV
Description: BIPOLAR MODULE-THYRISTOR/DIODE E
Packaging: Bulk
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Current - On State (It (AV)) (Max): 48 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 200 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
MCNA120UI2200PED |
Hersteller: IXYS
Description: BIPOLAR MODULE - THYRISTOR E2-P
Description: BIPOLAR MODULE - THYRISTOR E2-P
Produkt ist nicht verfügbar
N2543ZD300 |
Hersteller: IXYS
Description: SCR 3KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 3 kV
Description: SCR 3KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 3 kV
Produkt ist nicht verfügbar
N2418ZD300 |
Hersteller: IXYS
Description: SCR 3KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - On State (It (AV)) (Max): 2418 A
Supplier Device Package: W46
Voltage - Off State: 3 kV
Description: SCR 3KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - On State (It (AV)) (Max): 2418 A
Supplier Device Package: W46
Voltage - Off State: 3 kV
Produkt ist nicht verfügbar
DPG60B600LB-TRR |
Hersteller: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 3.19 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 3.19 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
DPG60B600LB-TUB |
Hersteller: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tube
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 3.19 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tube
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 3.19 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
IXFN70N120SK |
Hersteller: IXYS
Description: SICFET N-CH 1200V 68A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
Description: SICFET N-CH 1200V 68A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
Produkt ist nicht verfügbar
CS19-08HO1S-TRL |
Hersteller: IXYS
Description: SCR 800V 29A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 13 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-263AA
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 800 V
Description: SCR 800V 29A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 13 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-263AA
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
CS19-08HO1S-TRL |
Hersteller: IXYS
Description: SCR 800V 29A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 13 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-263AA
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 800 V
Description: SCR 800V 29A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 13 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-263AA
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 800 V
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.22 EUR |
10+ | 6.06 EUR |
100+ | 4.9 EUR |
N1449QL200 |
Hersteller: IXYS
Description: SCR 2KV 2790A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1410 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Current - On State (It (RMS)) (Max): 2790 A
Voltage - Off State: 2 kV
Description: SCR 2KV 2790A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1410 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Current - On State (It (RMS)) (Max): 2790 A
Voltage - Off State: 2 kV
Produkt ist nicht verfügbar
DPG60C300PC-TRL |
Hersteller: IXYS
Description: DIODE ARRAY GP 300V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE ARRAY GP 300V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 6.07 EUR |
DPG60C300PC-TRL |
Hersteller: IXYS
Description: DIODE ARRAY GP 300V 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
Description: DIODE ARRAY GP 300V 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.05 EUR |
10+ | 8.44 EUR |
100+ | 6.83 EUR |
CS19-08HO1S-TUB |
Hersteller: IXYS
Description: SCR 800V 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.32 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 800 V
Description: SCR 800V 31A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 20 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.32 V
Current - Off State (Max): 50 µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 31 A
Voltage - Off State: 800 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.42 EUR |
10+ | 4.55 EUR |
IXFA90N20X3-TRL |
Hersteller: IXYS
Description: MOSFET N-CH 200V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Description: MOSFET N-CH 200V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
Produkt ist nicht verfügbar
MDD72-16N1B |
Hersteller: IXYS
Description: DIODE MOD GP 1600V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
Description: DIODE MOD GP 1600V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
Produkt ist nicht verfügbar
MDD72-08N1B |
Hersteller: IXYS
Description: DIODE MOD GP 800V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 800 V
Description: DIODE MOD GP 800V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 800 V
Produkt ist nicht verfügbar
M0790YC200 |
Hersteller: IXYS
Description: FAST DIODE
Description: FAST DIODE
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 203.14 EUR |
10+ | 193.52 EUR |
W1263YC250 |
Hersteller: IXYS
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 151.82 EUR |
10+ | 143.97 EUR |
IXTX240N075L2 |
Hersteller: IXYS
Description: MOSFET N-CH 75V 240A PLUS247-3
Description: MOSFET N-CH 75V 240A PLUS247-3
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 64.7 EUR |
10+ | 59.68 EUR |
100+ | 50.96 EUR |
MDD44-14N1B |
Hersteller: IXYS
Description: DIODE MOD GP 1.4KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
Description: DIODE MOD GP 1.4KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 44.77 EUR |
MDD44-18N1B |
Hersteller: IXYS
Description: DIODE MOD GP 1800V 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1800 V
Description: DIODE MOD GP 1800V 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1800 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 48.84 EUR |
MDD44-12N1B |
Hersteller: IXYS
Description: DIODE MOD GP 1.2KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
Description: DIODE MOD GP 1.2KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 42.73 EUR |
10+ | 37.97 EUR |
MDD44-08N1B |
Hersteller: IXYS
Description: DIODE MODULE GP 800V 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
Description: DIODE MODULE GP 800V 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
Produkt ist nicht verfügbar
MCNA120PD2200TB-NI |
Hersteller: IXYS
Description: BIPOLAR MODULE THYRISTOR/DIODE T
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE THYRISTOR/DIODE T
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
MCNA120PD2200TB |
Hersteller: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 2.2 kV
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 190 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar