IXGT32N120A3-TRL IXYS
Hersteller: IXYS
Description: IGBT PT 1200V 75A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-268HV (IXGT)
IGBT Type: PT
Gate Charge: 89 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
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Technische Details IXGT32N120A3-TRL IXYS
Description: IGBT PT 1200V 75A TO268HV, Packaging: Tape & Reel (TR), Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A, Supplier Device Package: TO-268HV (IXGT), IGBT Type: PT, Gate Charge: 89 nC, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 230 A, Power - Max: 300 W.
Weitere Produktangebote IXGT32N120A3-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXGT32N120A3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 32A; 300W; TO268HV Case: TO268HV Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 1.2kV Power dissipation: 300W Gate charge: 89nC Pulsed collector current: 230A Type of transistor: IGBT Collector current: 32A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXGT32N120A3-TRL |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 32A; 300W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Pulsed collector current: 230A
Type of transistor: IGBT
Collector current: 32A
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 32A; 300W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 1.2kV
Power dissipation: 300W
Gate charge: 89nC
Pulsed collector current: 230A
Type of transistor: IGBT
Collector current: 32A
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH