IXFN55N120SK IXYS
Hersteller: IXYSDescription: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 12mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 90.68 EUR |
| 10+ | 81.72 EUR |
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Technische Details IXFN55N120SK IXYS
Description: SIC AND MULTICHIP DISCRETE, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V, Vgs(th) (Max) @ Id: 3.6V @ 12mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V.
Weitere Produktangebote IXFN55N120SK nach Preis ab 87.84 EUR bis 108.12 EUR
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IXFN55N120SK | Hersteller : Littelfuse |
MOSFET Modules MOSFET MINIBLOC single switch / SOT-227B |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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