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IXFN55N120SK

IXFN55N120SK IXYS


ixfn55n120sk-datasheet?assetguid=17f1b6bd-0e80-47d7-b655-3862c1de6cf4 Hersteller: IXYS
Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 12mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V
auf Bestellung 172 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+90.68 EUR
10+81.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFN55N120SK IXYS

Description: SIC AND MULTICHIP DISCRETE, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V, Vgs(th) (Max) @ Id: 3.6V @ 12mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V.

Weitere Produktangebote IXFN55N120SK nach Preis ab 89.90 EUR bis 102.92 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFN55N120SK IXFN55N120SK Hersteller : Littelfuse ixfn55n120sk-datasheet?assetguid=17f1b6bd-0e80-47d7-b655-3862c1de6cf4 MOSFET Modules MOSFET MINIBLOC single switch / SOT-227B
auf Bestellung 50 Stücke:
Lieferzeit 339-343 Tag (e)
Anzahl Preis
1+102.92 EUR
10+89.90 EUR
Im Einkaufswagen  Stück im Wert von  UAH