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IXTP30N25L2 IXTP30N25L2 IXYS media?resourcetype=datasheets&itemid=8a2ca46a-7756-449e-84fc-309c9a333b9f&filename=littelfuse-discrete-mosfets-n-channel-linear-ixt-30n25l2-datasheet Description: MOSFET N-CH 250V 30A TO220AB
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N4340TE180 IXYS Description: SCR 1.8KV 8545A W82
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N4340TE220 IXYS Description: SCR 2.2KV 8545A W82
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N4340TJ180 IXYS Description: SCR 1.8KV 8545A W81
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N4340TJ220 IXYS Description: SCR 2.2KV 8545A W81
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DSEP90-12AZ-TUB DSEP90-12AZ-TUB IXYS media?resourcetype=datasheets&itemid=7f53a375-76c4-4444-bbe9-0b4f442daa52&filename=Littelfuse-Power-Semiconductors-DSEP90-12AZ-Datasheet Description: DIODE GEN PURP 1.2KV 90A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Capacitance @ Vr, F: 48pF @ 600V, 1MHz
Current - Average Rectified (Io): 90A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
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IXGK400N30B3 IXGK400N30B3 IXYS Description: IGBT 300V 400A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-264 (IXGK)
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
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MDMA60B1200MB IXYS Description: BIPOLAR MODULE - OTHER ECO-PAC1
Packaging: Tube
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MDD72-12N1B MDD72-12N1B IXYS MDD72-12N1B.pdf Description: DIODE MOD GP 1200V 113A TO240AA
Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 113A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
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W2340JK120 IXYS Description: DIODE GEN PURP 1.2KV 2340A W113
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: W113
Current - Average Rectified (Io): 2340A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Box
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MCMA260PD1800YB MCMA260PD1800YB IXYS media?resourcetype=datasheets&amp;itemid=214f7e0b-4391-44de-94d9-b2e861640996&amp;filename=littelfuse%2520power%2520semiconductors%2520mcma260pd1800yb%2520datasheet.pdf Description: SCR MODULE 1.8KV 260A Y4-M6
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 408 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 260 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 8300A, 8970A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 150 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Box
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MCMA200PD1800YB IXYS media?resourcetype=datasheets&itemid=294FA9BF-2490-4942-8301-8A50C78F70A7&filename=Littelfuse-Power-Semiconductors-MCMA200PD1800YB-Datasheet Description: DUAL THYRISTOR/DIODE Y4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 315 A
Voltage - Off State: 1.8 kV
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IXTT140N075L2HV IXYS Description: MOSFET N-CH 75V 140A TO268HV
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MCD552-16IO2 IXYS media?resourcetype=datasheets&amp;itemid=1e77c10b-81de-45cd-9742-54431e3fafd1&amp;filename=littelfuse_thyristor_modules_thyristor_diodes_m__552_1_io2_datasheet.pdf Description: MCD 552 - 16 IO2
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 550 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1300 A
Voltage - Off State: 1.6 kV
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DSS16-01AS-TRL DSS16-01AS-TRL IXYS Description: DIODE SCHOTTKY 100V 16A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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DNA40U2200GU DNA40U2200GU IXYS media?resourcetype=datasheets&itemid=cf81d105-78b5-47af-93e5-c4b7e07db20a&filename=littelfuse%2520power%2520semiconductors%2520dna40u2200gu%2520datasheet.pdf Description: POWER DIODE DISCRETES-RECTIFIER
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
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IXTY1N80P-TRL IXYS Description: MOSFET N-CH 800V 1A TO252
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MCMA200PD1600YB MCMA200PD1600YB IXYS media?resourcetype=datasheets&itemid=846A604C-5260-4156-82DD-E7EE599E2DC1&filename=Littelfuse-Power-Semiconductors-MCMA200PD1600YB-Datasheet Description: DUAL THYRISTOR/DIODE Y4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 315 A
Voltage - Off State: 1.6 kV
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STS802U2SRP STS802U2SRP IXYS littelfuse-thyristor-sts802u2srp-datasheet?assetguid=c4fba1a9-3d58-4c64-a908-4b7290790f33 Description: SCR MODULE 800V 0.6A 8-SOIC
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 3 mA
Structure: Independent - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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STS802U2SRP STS802U2SRP IXYS littelfuse-thyristor-sts802u2srp-datasheet?assetguid=c4fba1a9-3d58-4c64-a908-4b7290790f33 Description: SCR MODULE 800V 0.6A 8-SOIC
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 3 mA
Structure: Independent - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2598 Stücke:
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3+7.5 EUR
10+4.91 EUR
100+3.45 EUR
500+2.82 EUR
1000+2.62 EUR
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IXFT26N100XHV IXFT26N100XHV IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixf-26n100x-datasheet?assetguid=076A027D-4812-49A3-A9F0-F5C4645DC770 Description: MOSFET N-CH 1000V 26A TO268HV
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268HV (IXFT)
Vgs(th) (Max) @ Id: 6V @ 4mA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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IXTA64N10L2-TRL IXTA64N10L2-TRL IXYS Description: MOSFET N-CH 100V 64A TO263
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DHG30IM600PC-TUB DHG30IM600PC-TUB IXYS media?resourcetype=datasheets&itemid=9be4e181-1b4c-4682-b9b6-1359c1d9206a&filename=Littelfuse-Power-Semiconductors-DHG30IM600PC-Datasheet Description: DIODE GEN PURP 600V 30A TO263
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 1361 Stücke:
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50+16.51 EUR
100+14.77 EUR
250+13.9 EUR
500+13.03 EUR
1250+11.72 EUR
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DHG30IM600PC-TRL DHG30IM600PC-TRL IXYS media?resourcetype=datasheets&itemid=9be4e181-1b4c-4682-b9b6-1359c1d9206a&filename=Littelfuse-Power-Semiconductors-DHG30IM600PC-Datasheet Description: DIODE GEN PURP 600V 30A TO263AA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IXYA8N250CHV IXYA8N250CHV IXYS DS100835AIXYAYH8N250CHV.pdf Description: IGBT 2500V 29A TO-263HV
Power - Max: 280 W
Current - Collector Pulsed (Icm): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 29 A
Part Status: Active
Gate Charge: 45 nC
Test Condition: 1250V, 8A, 15Ohm, 15V
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Td (on/off) @ 25°C: 11ns/180ns
Supplier Device Package: TO-263HV
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Reverse Recovery Time (trr): 5 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 377 Stücke:
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QJ6025LH4TP QJ6025LH4TP IXYS Description: 600V HIGH TEMPERATURE TRIAC IN T
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: ITO-220AB
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab
Packaging: Tube
auf Bestellung 1000 Stücke:
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2+14.09 EUR
10+12.66 EUR
100+10.38 EUR
500+8.83 EUR
1000+7.53 EUR
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QJ6025NH4RP QJ6025NH4RP IXYS media?resourcetype=datasheets&itemid=1d60b987-d30b-4516-93ee-943bcce7172d&filename=littelfuse_thyristor_qxx12xhx_datasheet.pdf Description: TRIAC 600V 25A TO263
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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QJ6025NH4RP QJ6025NH4RP IXYS media?resourcetype=datasheets&itemid=1d60b987-d30b-4516-93ee-943bcce7172d&filename=littelfuse_thyristor_qxx12xhx_datasheet.pdf Description: TRIAC 600V 25A TO263
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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QJ6025RH4TP QJ6025RH4TP IXYS Description: 600V HIGH TEMPERATURE TRIAC IN T
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke:
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10+11.57 EUR
100+9.47 EUR
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QJ6025NH4TP QJ6025NH4TP IXYS media?resourcetype=datasheets&itemid=1d60b987-d30b-4516-93ee-943bcce7172d&filename=littelfuse_thyristor_qxx12xhx_datasheet.pdf Description: TRIAC 600V 25A TO263
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 1000 Stücke:
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3+8.46 EUR
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100+6.26 EUR
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IXFT78N60X3HV IXFT78N60X3HV IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixft78n60x3hv_datasheet.pdf.pdf Description: MOSFET ULTRA 600V 78A TO268HV
Produkt ist nicht verfügbar
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R0964LC12E IXYS Description: SCR 1.2KV 1971A W10
Voltage - On State (Vtm) (Max): 1.96 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 964 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 10800A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Packaging: Box
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 1971 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W10
Current - Off State (Max): 70 mA
auf Bestellung 6 Stücke:
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MDC600-22IO1W IXYS Description: MOD BIPOLAR DIODE 2200V
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N6012ZD040 IXYS media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf Description: SCR 400V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 400 V
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IXTP28N15P IXYS Description: MOSFET N-CH TO-220
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N3165HA260 IXYS Description: SCR 2.6KV 6230A W79
Voltage - Off State: 2.6 kV
Current - On State (It (RMS)) (Max): 6230 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W79
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 3165 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
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N3165HA280 IXYS Description: SCR 2.8KV 6230A W79
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
Voltage - Off State: 2.8 kV
Current - On State (It (RMS)) (Max): 6230 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W79
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 3165 A
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MDMA110P1600TG MDMA110P1600TG IXYS media?resourcetype=datasheets&itemid=a1f04155-5cf0-4999-955c-addf7cb69dc5&filename=Littelfuse-Power-Semiconductors-MDMA110P1600TG-Datasheet Description: DIODE MOD GP 1600V 110A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 110A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 110 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
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N2830HE260 IXYS Description: SCR 2.6KV 5585A W80
Voltage - Off State: 2.6 kV
Current - On State (It (RMS)) (Max): 5585 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W80
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 2830 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
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DFE240X600NA DFE240X600NA IXYS media?resourcetype=datasheets&itemid=5feac88a-b7aa-4d9e-91e0-6524932e5d38&filename=littelfuse%2520power%2520semiconductors%2520dfe240x600na%2520datasheet.pdf Description: DIODE MOD GP 600V 120A SOT227B
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227B
Current - Average Rectified (Io) (per Diode): 120A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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IXTD3N50P-2J IXYS Description: MOSFET N-CH 500V 3A DIE
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IXTM67N10 IXYS Description: MOSFET N-CH 100V 67A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
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IXFM67N10 IXYS Description: MOSFET N-CH 100V 67A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
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STP802U2SRP STP802U2SRP IXYS littelfuse-thyristor-stp802u2srp-datasheet?assetguid=8bfa922f-512f-4095-bee0-385789b17272 Description: SCR MODULE 800V 0.6A 8-SOIC
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 3 mA
Structure: Independent - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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STP802U2SRP STP802U2SRP IXYS littelfuse-thyristor-stp802u2srp-datasheet?assetguid=8bfa922f-512f-4095-bee0-385789b17272 Description: SCR MODULE 800V 0.6A 8-SOIC
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 3 mA
Structure: Independent - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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MCC162-18IO1B MCC162-18IO1B IXYS Description: SCR MODULE 1.8KV 300A Y4-M6
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 300 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 181 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Box
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MTC120WX75GD-SMD IXYS Description: MOSFET 6N-CH 75V 180A ISOPLUS
Supplier Device Package: ISOPLUS-DIL™
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL™
Packaging: Tube
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GWM160-0055X1-SMDSAM IXYS GWM160-0055X1.pdf Description: MOSFET 6N-CH 55V 150A ISOPLUS
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MCD600-22IO1W IXYS Description: MOD SCR HI POWER 1200V
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IXTK3N250L IXYS media?resourcetype=datasheets&itemid=697abaf0-8e4f-4022-850a-2222f0e095db&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_3n250l_datasheet.pdf Description: MOSFET N-CH 2500V 3A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXFM15N60 IXYS IXFH%2CIXFM_15N60%2C%20IXFH%2CIXFM_20N60.pdf Description: MOSFET N-CH 600V 15A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
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IXFT52N30Q TRL IXYS IXF(H,K,T)52N30Q.pdf Description: MOSFET N-CH 300V 52A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-268 (IXFT)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
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IXFX52N30Q IXYS Description: MOSFET N-CH 300V 52A PLUS247-3
Drain to Source Voltage (Vdss): 300 V
Part Status: Obsolete
Supplier Device Package: PLUS247™-3
Power Dissipation (Max): 360W (Tc)
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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MDD26-18N1B MDD26-18N1B IXYS MDD26-18N1B.pdf Description: DIODE MODULE 1.8KV 36A TO240AA
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MDD56-18N1B MDD56-18N1B IXYS MDD56-18N1B.pdf Description: DIODE MOD GP 1800V 95A TO240AA
Current - Reverse Leakage @ Vr: 10 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 95A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
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IXGH56N60B3 IXYS Description: DISC IGBT PT-MID FREQUENCY TO-24
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K1270MA420 IXYS Description: SCR 4.2KV W77
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MDA72-16N1B MDA72-16N1B IXYS MDD72,%20MDA72.pdf Description: DIODE MODULE 1.6KV 113A TO240AA
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 113A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
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IXFP30N25X3M IXFP30N25X3M IXYS littelfuse-discrete-mosfets-ixfp30n25x3m-datasheet?assetguid=2d206ff5-b2ac-4ccd-97cf-d473755efd4c Description: MOSFET N-CH 250V 30A TO220
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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IXFJ80N25X3 IXFJ80N25X3 IXYS PCIM_Highlights_2017.pdf Description: MOSFET N-CH 250V 44A ISO TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISO TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXTP30N25L2 media?resourcetype=datasheets&itemid=8a2ca46a-7756-449e-84fc-309c9a333b9f&filename=littelfuse-discrete-mosfets-n-channel-linear-ixt-30n25l2-datasheet
IXTP30N25L2
Hersteller: IXYS
Description: MOSFET N-CH 250V 30A TO220AB
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N4340TE180
Hersteller: IXYS
Description: SCR 1.8KV 8545A W82
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N4340TE220
Hersteller: IXYS
Description: SCR 2.2KV 8545A W82
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N4340TJ180
Hersteller: IXYS
Description: SCR 1.8KV 8545A W81
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N4340TJ220
Hersteller: IXYS
Description: SCR 2.2KV 8545A W81
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DSEP90-12AZ-TUB media?resourcetype=datasheets&itemid=7f53a375-76c4-4444-bbe9-0b4f442daa52&filename=Littelfuse-Power-Semiconductors-DSEP90-12AZ-Datasheet
DSEP90-12AZ-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 90A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85 ns
Technology: Standard
Capacitance @ Vr, F: 48pF @ 600V, 1MHz
Current - Average Rectified (Io): 90A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.69 V @ 90 A
Current - Reverse Leakage @ Vr: 1 mA @ 1200 V
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1+22.32 EUR
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IXGK400N30B3
IXGK400N30B3
Hersteller: IXYS
Description: IGBT 300V 400A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-264 (IXGK)
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 300 V
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MDMA60B1200MB
Hersteller: IXYS
Description: BIPOLAR MODULE - OTHER ECO-PAC1
Packaging: Tube
Produkt ist nicht verfügbar
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MDD72-12N1B MDD72-12N1B.pdf
MDD72-12N1B
Hersteller: IXYS
Description: DIODE MOD GP 1200V 113A TO240AA
Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 113A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
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1+68.46 EUR
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W2340JK120
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 2340A W113
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: W113
Current - Average Rectified (Io): 2340A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Box
Produkt ist nicht verfügbar
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MCMA260PD1800YB media?resourcetype=datasheets&amp;itemid=214f7e0b-4391-44de-94d9-b2e861640996&amp;filename=littelfuse%2520power%2520semiconductors%2520mcma260pd1800yb%2520datasheet.pdf
MCMA260PD1800YB
Hersteller: IXYS
Description: SCR MODULE 1.8KV 260A Y4-M6
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 408 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 260 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 8300A, 8970A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 150 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Box
auf Bestellung 5 Stücke:
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1+200.15 EUR
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MCMA200PD1800YB media?resourcetype=datasheets&itemid=294FA9BF-2490-4942-8301-8A50C78F70A7&filename=Littelfuse-Power-Semiconductors-MCMA200PD1800YB-Datasheet
Hersteller: IXYS
Description: DUAL THYRISTOR/DIODE Y4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 315 A
Voltage - Off State: 1.8 kV
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IXTT140N075L2HV
Hersteller: IXYS
Description: MOSFET N-CH 75V 140A TO268HV
Produkt ist nicht verfügbar
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MCD552-16IO2 media?resourcetype=datasheets&amp;itemid=1e77c10b-81de-45cd-9742-54431e3fafd1&amp;filename=littelfuse_thyristor_modules_thyristor_diodes_m__552_1_io2_datasheet.pdf
Hersteller: IXYS
Description: MCD 552 - 16 IO2
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 550 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1300 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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DSS16-01AS-TRL
DSS16-01AS-TRL
Hersteller: IXYS
Description: DIODE SCHOTTKY 100V 16A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
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DNA40U2200GU media?resourcetype=datasheets&itemid=cf81d105-78b5-47af-93e5-c4b7e07db20a&filename=littelfuse%2520power%2520semiconductors%2520dna40u2200gu%2520datasheet.pdf
DNA40U2200GU
Hersteller: IXYS
Description: POWER DIODE DISCRETES-RECTIFIER
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Three Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 933 Stücke:
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1+38.37 EUR
14+27.56 EUR
112+25.26 EUR
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IXTY1N80P-TRL
Hersteller: IXYS
Description: MOSFET N-CH 800V 1A TO252
Produkt ist nicht verfügbar
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MCMA200PD1600YB media?resourcetype=datasheets&itemid=846A604C-5260-4156-82DD-E7EE599E2DC1&filename=Littelfuse-Power-Semiconductors-MCMA200PD1600YB-Datasheet
MCMA200PD1600YB
Hersteller: IXYS
Description: DUAL THYRISTOR/DIODE Y4
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 200 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 315 A
Voltage - Off State: 1.6 kV
auf Bestellung 13 Stücke:
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1+124.37 EUR
12+113.06 EUR
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STS802U2SRP littelfuse-thyristor-sts802u2srp-datasheet?assetguid=c4fba1a9-3d58-4c64-a908-4b7290790f33
STS802U2SRP
Hersteller: IXYS
Description: SCR MODULE 800V 0.6A 8-SOIC
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 3 mA
Structure: Independent - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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STS802U2SRP littelfuse-thyristor-sts802u2srp-datasheet?assetguid=c4fba1a9-3d58-4c64-a908-4b7290790f33
STS802U2SRP
Hersteller: IXYS
Description: SCR MODULE 800V 0.6A 8-SOIC
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 3 mA
Structure: Independent - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2598 Stücke:
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3+7.5 EUR
10+4.91 EUR
100+3.45 EUR
500+2.82 EUR
1000+2.62 EUR
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IXFT26N100XHV littelfuse-discrete-mosfets-n-channel-ultra-junction-ixf-26n100x-datasheet?assetguid=076A027D-4812-49A3-A9F0-F5C4645DC770
IXFT26N100XHV
Hersteller: IXYS
Description: MOSFET N-CH 1000V 26A TO268HV
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268HV (IXFT)
Vgs(th) (Max) @ Id: 6V @ 4mA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTA64N10L2-TRL
IXTA64N10L2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 100V 64A TO263
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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DHG30IM600PC-TUB media?resourcetype=datasheets&itemid=9be4e181-1b4c-4682-b9b6-1359c1d9206a&filename=Littelfuse-Power-Semiconductors-DHG30IM600PC-Datasheet
DHG30IM600PC-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 600V 30A TO263
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.26 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 30A
Capacitance @ Vr, F: 16pF @ 400V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 1361 Stücke:
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50+16.51 EUR
100+14.77 EUR
250+13.9 EUR
500+13.03 EUR
1250+11.72 EUR
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DHG30IM600PC-TRL media?resourcetype=datasheets&itemid=9be4e181-1b4c-4682-b9b6-1359c1d9206a&filename=Littelfuse-Power-Semiconductors-DHG30IM600PC-Datasheet
DHG30IM600PC-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 600V 30A TO263AA
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.37 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IXYA8N250CHV DS100835AIXYAYH8N250CHV.pdf
IXYA8N250CHV
Hersteller: IXYS
Description: IGBT 2500V 29A TO-263HV
Power - Max: 280 W
Current - Collector Pulsed (Icm): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 29 A
Part Status: Active
Gate Charge: 45 nC
Test Condition: 1250V, 8A, 15Ohm, 15V
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Td (on/off) @ 25°C: 11ns/180ns
Supplier Device Package: TO-263HV
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Reverse Recovery Time (trr): 5 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 377 Stücke:
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1+36.4 EUR
50+21.52 EUR
100+20.09 EUR
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QJ6025LH4TP
QJ6025LH4TP
Hersteller: IXYS
Description: 600V HIGH TEMPERATURE TRIAC IN T
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: ITO-220AB
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3 Isolated Tab
Packaging: Tube
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
2+14.09 EUR
10+12.66 EUR
100+10.38 EUR
500+8.83 EUR
1000+7.53 EUR
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QJ6025NH4RP media?resourcetype=datasheets&itemid=1d60b987-d30b-4516-93ee-943bcce7172d&filename=littelfuse_thyristor_qxx12xhx_datasheet.pdf
QJ6025NH4RP
Hersteller: IXYS
Description: TRIAC 600V 25A TO263
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 500 Stücke:
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AnzahlPrivatkunde
500+7.4 EUR
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QJ6025NH4RP media?resourcetype=datasheets&itemid=1d60b987-d30b-4516-93ee-943bcce7172d&filename=littelfuse_thyristor_qxx12xhx_datasheet.pdf
QJ6025NH4RP
Hersteller: IXYS
Description: TRIAC 600V 25A TO263
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 500 Stücke:
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2+11.73 EUR
10+10.07 EUR
100+8.39 EUR
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QJ6025RH4TP
QJ6025RH4TP
Hersteller: IXYS
Description: 600V HIGH TEMPERATURE TRIAC IN T
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.88 EUR
10+11.57 EUR
100+9.47 EUR
500+8.07 EUR
1000+6.88 EUR
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QJ6025NH4TP media?resourcetype=datasheets&itemid=1d60b987-d30b-4516-93ee-943bcce7172d&filename=littelfuse_thyristor_qxx12xhx_datasheet.pdf
QJ6025NH4TP
Hersteller: IXYS
Description: TRIAC 600V 25A TO263
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.46 EUR
50+6.76 EUR
100+6.26 EUR
Mindestbestellmenge: 3 Stücke
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IXFT78N60X3HV littelfuse_discrete_mosfets_n-channel_ultra_junction_ixft78n60x3hv_datasheet.pdf.pdf
IXFT78N60X3HV
Hersteller: IXYS
Description: MOSFET ULTRA 600V 78A TO268HV
Produkt ist nicht verfügbar
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R0964LC12E
Hersteller: IXYS
Description: SCR 1.2KV 1971A W10
Voltage - On State (Vtm) (Max): 1.96 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 964 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 10800A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Packaging: Box
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 1971 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W10
Current - Off State (Max): 70 mA
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1+735.47 EUR
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MDC600-22IO1W
Hersteller: IXYS
Description: MOD BIPOLAR DIODE 2200V
Produkt ist nicht verfügbar
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N6012ZD040 media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf
Hersteller: IXYS
Description: SCR 400V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 400 V
Produkt ist nicht verfügbar
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IXTP28N15P
Hersteller: IXYS
Description: MOSFET N-CH TO-220
Produkt ist nicht verfügbar
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N3165HA260
Hersteller: IXYS
Description: SCR 2.6KV 6230A W79
Voltage - Off State: 2.6 kV
Current - On State (It (RMS)) (Max): 6230 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W79
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 3165 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
Produkt ist nicht verfügbar
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N3165HA280
Hersteller: IXYS
Description: SCR 2.8KV 6230A W79
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
Voltage - Off State: 2.8 kV
Current - On State (It (RMS)) (Max): 6230 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W79
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 3165 A
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MDMA110P1600TG media?resourcetype=datasheets&itemid=a1f04155-5cf0-4999-955c-addf7cb69dc5&filename=Littelfuse-Power-Semiconductors-MDMA110P1600TG-Datasheet
MDMA110P1600TG
Hersteller: IXYS
Description: DIODE MOD GP 1600V 110A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 110A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 110 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
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N2830HE260
Hersteller: IXYS
Description: SCR 2.6KV 5585A W80
Voltage - Off State: 2.6 kV
Current - On State (It (RMS)) (Max): 5585 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W80
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 2830 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
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DFE240X600NA media?resourcetype=datasheets&itemid=5feac88a-b7aa-4d9e-91e0-6524932e5d38&filename=littelfuse%2520power%2520semiconductors%2520dfe240x600na%2520datasheet.pdf
DFE240X600NA
Hersteller: IXYS
Description: DIODE MOD GP 600V 120A SOT227B
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227B
Current - Average Rectified (Io) (per Diode): 120A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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IXTD3N50P-2J
Hersteller: IXYS
Description: MOSFET N-CH 500V 3A DIE
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IXTM67N10
Hersteller: IXYS
Description: MOSFET N-CH 100V 67A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
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IXFM67N10
Hersteller: IXYS
Description: MOSFET N-CH 100V 67A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
Produkt ist nicht verfügbar
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STP802U2SRP littelfuse-thyristor-stp802u2srp-datasheet?assetguid=8bfa922f-512f-4095-bee0-385789b17272
STP802U2SRP
Hersteller: IXYS
Description: SCR MODULE 800V 0.6A 8-SOIC
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 3 mA
Structure: Independent - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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STP802U2SRP littelfuse-thyristor-stp802u2srp-datasheet?assetguid=8bfa922f-512f-4095-bee0-385789b17272
STP802U2SRP
Hersteller: IXYS
Description: SCR MODULE 800V 0.6A 8-SOIC
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 3 mA
Structure: Independent - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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100+3.32 EUR
500+2.71 EUR
1000+2.51 EUR
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MCC162-18IO1B
MCC162-18IO1B
Hersteller: IXYS
Description: SCR MODULE 1.8KV 300A Y4-M6
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 300 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 181 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Box
Produkt ist nicht verfügbar
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MTC120WX75GD-SMD
Hersteller: IXYS
Description: MOSFET 6N-CH 75V 180A ISOPLUS
Supplier Device Package: ISOPLUS-DIL™
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL™
Packaging: Tube
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GWM160-0055X1-SMDSAM GWM160-0055X1.pdf
Hersteller: IXYS
Description: MOSFET 6N-CH 55V 150A ISOPLUS
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MCD600-22IO1W
Hersteller: IXYS
Description: MOD SCR HI POWER 1200V
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IXTK3N250L media?resourcetype=datasheets&itemid=697abaf0-8e4f-4022-850a-2222f0e095db&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_3n250l_datasheet.pdf
Hersteller: IXYS
Description: MOSFET N-CH 2500V 3A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar
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IXFM15N60 IXFH%2CIXFM_15N60%2C%20IXFH%2CIXFM_20N60.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 15A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
Produkt ist nicht verfügbar
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IXFT52N30Q TRL IXF(H,K,T)52N30Q.pdf
Hersteller: IXYS
Description: MOSFET N-CH 300V 52A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-268 (IXFT)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IXFX52N30Q
Hersteller: IXYS
Description: MOSFET N-CH 300V 52A PLUS247-3
Drain to Source Voltage (Vdss): 300 V
Part Status: Obsolete
Supplier Device Package: PLUS247™-3
Power Dissipation (Max): 360W (Tc)
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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MDD26-18N1B MDD26-18N1B.pdf
MDD26-18N1B
Hersteller: IXYS
Description: DIODE MODULE 1.8KV 36A TO240AA
Produkt ist nicht verfügbar
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MDD56-18N1B MDD56-18N1B.pdf
MDD56-18N1B
Hersteller: IXYS
Description: DIODE MOD GP 1800V 95A TO240AA
Current - Reverse Leakage @ Vr: 10 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 95A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Produkt ist nicht verfügbar
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IXGH56N60B3
Hersteller: IXYS
Description: DISC IGBT PT-MID FREQUENCY TO-24
Produkt ist nicht verfügbar
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K1270MA420
Hersteller: IXYS
Description: SCR 4.2KV W77
Produkt ist nicht verfügbar
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MDA72-16N1B MDD72,%20MDA72.pdf
MDA72-16N1B
Hersteller: IXYS
Description: DIODE MODULE 1.6KV 113A TO240AA
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 113A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
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10+76.36 EUR
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IXFP30N25X3M littelfuse-discrete-mosfets-ixfp30n25x3m-datasheet?assetguid=2d206ff5-b2ac-4ccd-97cf-d473755efd4c
IXFP30N25X3M
Hersteller: IXYS
Description: MOSFET N-CH 250V 30A TO220
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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IXFJ80N25X3 PCIM_Highlights_2017.pdf
IXFJ80N25X3
Hersteller: IXYS
Description: MOSFET N-CH 250V 44A ISO TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISO TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AnzahlPrivatkunde
1+26.05 EUR
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