IXYP24N100A4 IXYS
Hersteller: IXYSDescription: IGBT PT 1000V 85A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
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Technische Details IXYP24N100A4 IXYS
Description: IGBT PT 1000V 85A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 47 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A, Supplier Device Package: TO-220 (IXYP), IGBT Type: PT, Td (on/off) @ 25°C: 13ns/216ns, Switching Energy: 3.5mJ (on), 2.3mJ (off), Test Condition: 800V, 24A, 10Ohm, 15V, Gate Charge: 44 nC, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 145 A, Power - Max: 375 W.
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IXYP24N100A4 | Hersteller : IXYS |
IGBTs TO263 1KV 24A XPT |
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| IXYP24N100A4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1kV; 85A; 375W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1kV Collector current: 85A Power dissipation: 375W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 145A Mounting: THT Gate charge: 44nC Kind of package: tube |
Produkt ist nicht verfügbar |