Technische Details MCB20P1200LB-TRR Littelfuse
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B, Semiconductor structure: double series, Drain-source voltage: 1.2kV, Drain current: 25.5A, On-state resistance: 98mΩ, Type of transistor: N-MOSFET, Case: SMPD-B, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 62nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -5...20V, Mounting: SMD, Anzahl je Verpackung: 200 Stücke.
Weitere Produktangebote MCB20P1200LB-TRR
Foto | Bezeichnung | Hersteller | Beschreibung |
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MCB20P1200LB-TRR | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B Semiconductor structure: double series Drain-source voltage: 1.2kV Drain current: 25.5A On-state resistance: 98mΩ Type of transistor: N-MOSFET Case: SMPD-B Polarisation: unipolar Kind of package: reel; tape Gate charge: 62nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Mounting: SMD Anzahl je Verpackung: 200 Stücke |
Produkt ist nicht verfügbar |
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MCB20P1200LB-TRR | Hersteller : IXYS | Description: MCB20P1200LB-TRR |
Produkt ist nicht verfügbar |
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MCB20P1200LB-TRR | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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MCB20P1200LB-TRR | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B Semiconductor structure: double series Drain-source voltage: 1.2kV Drain current: 25.5A On-state resistance: 98mΩ Type of transistor: N-MOSFET Case: SMPD-B Polarisation: unipolar Kind of package: reel; tape Gate charge: 62nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Mounting: SMD |
Produkt ist nicht verfügbar |