MDMA450UB1600PTED IXYS
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 175A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details MDMA450UB1600PTED IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.2kV, Collector current: 175A, Case: E2-Pack, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 450A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MDMA450UB1600PTED
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MDMA450UB1600PTED | Hersteller : IXYS | Description: BIPOLARMODULE-RECTIFIER+BRAKE E2 |
Produkt ist nicht verfügbar |
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MDMA450UB1600PTED | Hersteller : IXYS |
 Discrete Semiconductor Modules BIPOLAR MODULE-RECT+BRAKE |
Produkt ist nicht verfügbar |
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| MDMA450UB1600PTED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Collector current: 175A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 450A Mechanical mounting: screw |
Produkt ist nicht verfügbar |