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IXFK98N50P3 IXFK98N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_98n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 98A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Power Dissipation (Max): 1300W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Vgs(th) (Max) @ Id: 5V @ 8mA
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IXTP110N12T2 IXTP110N12T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_110n12t2_datasheet.pdf.pdf Description: MOSFET N-CH 120V 110A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 517W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IXGA48N60A3-TRL IXGA48N60A3-TRL IXYS 238_IXGA48N60A3.pdf Description: IGBT PT 600V 120A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
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IXGA48N60B3-TRL IXGA48N60B3-TRL IXYS Description: IGBT PT 600V 48A TO-263
Power - Max: 300 W
Current - Collector Pulsed (Icm): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Part Status: Active
Gate Charge: 115 nC
Test Condition: 480V, 30A, 5Ohm, 15V
Switching Energy: 840µJ (on), 660µJ (off)
Td (on/off) @ 25°C: 22ns/130ns
IGBT Type: PT
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IXFN48N50 IXFN48N50 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-4-N50-Datasheet.PDF?assetguid=887754DE-8CB1-4B0F-B5B9-F6A862E6ADE4 Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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DLA100B800LB-TRR IXYS media?resourcetype=datasheets&itemid=065b1604-0bcb-4ad1-9912-f1c3d8bb4a36&filename=littelfuse%2520power%2520semiconductors%2520dla100b800lb%2520datasheet.pdf Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 124 A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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DLA100B800LB-TUB IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
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DLA100B1200LB-TUB DLA100B1200LB-TUB IXYS Littelfuse-Power-Semiconductors-DLA100B1200LB-Datasheet?assetguid=b03f3e7e-f4c0-46bb-b551-b31465465f61 Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 132 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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IXFN200N07 IXFN200N07 IXYS 97533.pdf description Description: MOSFET N-CH 70V 200A SOT-227B
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DSEI60-12A DSEI60-12A IXYS Littelfuse-Power-Semiconductors-DSEI60-12A-Datasheet?assetguid=bcca0668-1e7f-4db6-9ef6-0ebe59060c4d Description: DIODE STANDARD 1200V 52A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 52A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
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DSEI25-06A DSEI25-06A IXYS Description: DIODE STANDARD 600V 25A TO2202
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 25A
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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DSEI2X31-12B DSEI2X31-12B IXYS littelfuse-power-semiconductors-dsei2x31-12b-datasheet?assetguid=ee481cfe-0348-4b51-bb49-6f08b9d0ed4e description Description: DIODE MOD GP 1200V 28A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
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DSEI25-06AS-TRL DSEI25-06AS-TRL IXYS Description: DIODE STANDARD 600V 25A TO263
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 25A
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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DSEI25-06AS-TUB DSEI25-06AS-TUB IXYS Description: DIODE STANDARD 600V 25A TO263
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 25A
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
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IXTQ69N30PM IXYS a Description: MOSFET N-CH 300V 25A TO3PFP
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IXFK50N85X IXFK50N85X IXYS DS100704DIXFTFHFK50N85XHV.pdf Description: MOSFET N-CH 850V 50A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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MDNA210UB2200PTED IXYS Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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MDNA280UB2200PTED IXYS Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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IXTA3N120HV-TRL IXTA3N120HV-TRL IXYS littelfuse-discrete-mosfets-ixta3n120hv-datasheet?assetguid=6a632cdd-ab5c-4fd5-85f6-2f91fead1e78 Description: MOSFET N-CH 1200V 3A TO263HV
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IXTA3N120-TRR IXTA3N120-TRR IXYS littelfuse-discrete-mosfets-ixtp3n120-datasheet?assetguid=62ac5571-cff4-4f49-9438-bfa628c5f974 Description: MOSFET N-CH 1200V 3A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IXYY8N90C3-TRL IXYY8N90C3-TRL IXYS littelfuse-discrete-igbts-ixy-8n90c3-datasheet?assetguid=11d4bd5c-8ae2-405e-8bec-58f631ef5fbe Description: IGBT PT 900V 20A TO-252AA
Power - Max: 125 W
Current - Collector Pulsed (Icm): 48 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 13.3 nC
Test Condition: 450V, 8A, 30Ohm, 15V
Switching Energy: 460µJ (on), 180µJ (off)
Td (on/off) @ 25°C: 16ns/40ns
IGBT Type: PT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Reverse Recovery Time (trr): 20 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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MCD162-16io1B MCD162-16io1B IXYS Description: SCR MODULE 1.6KV 300A Y4-M6
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 300 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 181 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Box
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DAA10EM1800PZ-TRL DAA10EM1800PZ-TRL IXYS media?resourcetype=datasheets&itemid=8b1378fb-444d-4854-bf2e-b3d297066d3b&filename=Littelfuse-Power-Semiconductors-DAA10EM1800PZ-Datasheet Description: DIODE AVAL 1.8KV 10A TO263HV
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263HV
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
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DAA10EM1800PZ-TUB DAA10EM1800PZ-TUB IXYS media?resourcetype=datasheets&itemid=8b1378fb-444d-4854-bf2e-b3d297066d3b&filename=Littelfuse-Power-Semiconductors-DAA10EM1800PZ-Datasheet Description: DIODE AVAL 1.8KV 10A TO263HV
Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263HV
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXGN200N170 IXGN200N170 IXYS littelfuse-discrete-igbts-ixgn200n170-datasheet?assetguid=7e04c6cf-4f13-4544-a332-6f459d9482a9 Description: IGBT 1700V 280A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 133 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 37ns/320ns
Switching Energy: 28mJ (on), 30mJ (off)
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 540 nC
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 1050 A
Power - Max: 1250 W
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IXYH50N120C3D1 IXYH50N120C3D1 IXYS DS100388DIXYH50N120C3D1.pdf Description: IGBT 1200V 90A TO-247
Power - Max: 625 W
Current - Collector Pulsed (Icm): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 90 A
Part Status: Active
Gate Charge: 142 nC
Test Condition: 600V, 50A, 5Ohm, 15V
Switching Energy: 3mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 28ns/133ns
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXYH50N120C3 IXYH50N120C3 IXYS DS100343CIXYH50N120C3.pdf Description: IGBT 1200V 100A TO-247
Supplier Device Package: TO-247 (IXYH)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 750 W
Current - Collector Pulsed (Icm): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 142 nC
Test Condition: 600V, 50A, 5Ohm, 15V
Switching Energy: 3mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 28ns/133ns
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IXGT72N60A3-TRL IXYS Description: IGBT PT 600V 75A TO-268
Power - Max: 540 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 230 nC
Test Condition: 480V, 50A, 3Ohm, 15V
Switching Energy: 1.38mJ (on), 3.5mJ (off)
Td (on/off) @ 25°C: 31ns/320ns
IGBT Type: PT
Supplier Device Package: TO-268
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Reverse Recovery Time (trr): 34 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
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IXYH30N65C3H1 IXYH30N65C3H1 IXYS littelfuse_discrete_igbts_xpt_ixy_30n65c3h1_datasheet.pdf.pdf Description: IGBT 650V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
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IXFA3N120-TRR IXFA3N120-TRR IXYS Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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MCC95-14IO1 MCC95-14IO1 IXYS littelfuse-power-semiconductors-mcc95-14io1-datasheet?assetguid=7454aafc-45a9-4439-be28-a68a9e0ca580 Description: SCR MODULE 1.4KV 182A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 182 A
Voltage - Off State: 1.4 kV
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MCC95-16IO1 MCC95-16IO1 IXYS MCC9516io1.pdf Description: SCR MODULE 1.6KV 182A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 182 A
Voltage - Off State: 1.6 kV
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MMIX1X340N65B4 IXYS DS100598A(MMIX1X340N65B4).pdf Description: MOSFET N-CH
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IXA4I1200UC-TRL IXA4I1200UC-TRL IXYS IXA4I1200UC.pdf Description: IGBT 1200V 9A 45W TO252AA
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 9 A
Gate Charge: 12 nC
Test Condition: 600V, 3A, 330Ohm, 15V
Switching Energy: 400µJ (on), 300µJ (off)
IGBT Type: PT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IXA4IF1200UC-TRL IXA4IF1200UC-TRL IXYS littelfuse_discrete_igbts_xpt_ixa4if1200uc_datasheet.pdf.pdf Description: IGBT 1200V 9A 45W TO252AA
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 9 A
Gate Charge: 12 nC
Test Condition: 600V, 3A, 330Ohm, 15V
Switching Energy: 400µJ (on), 300µJ (off)
IGBT Type: PT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Reverse Recovery Time (trr): 350 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IXA4I1200UC-TUB IXYS media?resourcetype=datasheets&itemid=d9845082-6932-4641-bff2-4975637e4e13&filename=littelfuse%2520power%2520semiconductors%2520ixa4i1200uc%2520datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-252D
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
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IXA4IF1200UC-TUB IXYS Description: DISC IGBT XPT-GENX3 TO-252D
Current - Collector (Ic) (Max): 9 A
Gate Charge: 12 nC
Test Condition: 600V, 3A, 330Ohm, 15V
Switching Energy: 400µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 70ns/250ns
IGBT Type: PT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
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DSEI2X60-04C DSEI2X60-04C IXYS media?resourcetype=datasheets&itemid=09f9b2c2-a97d-49db-a728-472a9e688f56&filename=littelfuse%2520power%2520semiconductors%2520dsei2x60-04c%2520datasheet.pdf Description: DIODE MODULE GP 400V 60A SOT227B
Current - Reverse Leakage @ Vr: 200 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227B
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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DCG17P1200HR IXYS Description: POWER DIODE DISC-SCHOTTKY ISOPLU
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IXFR16N90Q IXYS Description: MOSFET N-CH ISOPLUS247
Part Status: Obsolete
Packaging: Tube
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DSP8-12S-TRL DSP8-12S-TRL IXYS DSP8-12S.pdf Description: DIODE ARRAY GP 1200V 11A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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DSEP29-06AS-TRL DSEP29-06AS-TRL IXYS Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060 Description: DIODE STANDARD 600V 30A TO263AA
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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DSEP29-06AS-TUB DSEP29-06AS-TUB IXYS Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060 Description: DIODE ARRAY GP 600V TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.94 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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DLA40IM800PC-TUB DLA40IM800PC-TUB IXYS DLA40IM800PC.pdf Description: DIODE GEN PURP 800V 40A TO263
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 40A
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXTF6N200P3 IXYS DS100716(IXTF6N200P3).pdf Description: MOSFET N-CH
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IXTF2N300P3 IXYS DS100712(IXTF2N300P3).pdf Description: MOSFET N-CH
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IXFR20N80Q IXYS Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Produkt ist nicht verfügbar
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IXFX20N80Q IXFX20N80Q IXYS Description: MOSFET N-CH 800V 20A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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IXYP24N100C4 IXYP24N100C4 IXYS littelfuse-discrete-igbts-ixy-24n100c4-datasheet?assetguid=9e764d41-4809-4a1d-9928-1cb6ca6c9107 Description: IGBT PT 1000V 76A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/147ns
Switching Energy: 3.6mJ (on), 1mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 132 A
Power - Max: 375 W
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IXFN24N100F IXYS description Description: MOSFET N-CH 1000V 24A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IXFX24N100F IXYS Description: MOSFET N-CH 1000V 24A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IXTY08N100P-TRL IXYS Description: IXTY08N100P TRL
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IXYH75N65C3H1 IXYH75N65C3H1 IXYS littelfuse-discrete-igbts-ixyh75n65c3h1-datasheet?assetguid=224dfb65-7587-4f7c-8b16-0c4c9033fed6 Description: IGBT PT 650V 170A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
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IXYH75N65C3 IXYH75N65C3 IXYS media?resourcetype=datasheets&itemid=880AF1F0-BCE9-40BF-B617-AC7060048A7A&filename=Littelfuse-Discrete-IGBTs-XPT-IXYH75N65C3-Datasheet.PDF Description: IGBT PT 650V 170A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
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IXYH50N65C3D1 IXYH50N65C3D1 IXYS media?resourcetype=datasheets&itemid=834EE2EA-9CEA-402F-8D05-EFCC34AF555B&filename=Littelfuse-Discrete-IGBTs-XPT-IXYH50N65C3D1-Datasheet.PDF Description: IGBT 650V 132A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 800µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
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IXFN27N120SK IXYS Description: SICARBIDE-DISCRETE MOSFET SOT-22
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MIXA80W1200PTEH IXYS Description: IGBT MODULE SIXPACK E3-PACK-PF
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IXFY30N25X3 IXFY30N25X3 IXYS littelfuse-discrete-mosfets-ixf-30n25x3-datasheet?assetguid=f98c5907-f43b-4415-a418-45a0a7855e6d Description: MOSFET N-CH 250V 30A TO252AA
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
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IXTQ36P15P IXTQ36P15P IXYS littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86 Description: MOSFET P-CH 150V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 697 Stücke:
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30+10.75 EUR
120+9.1 EUR
510+7.9 EUR
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IXFP14N55X2 IXYS Description: IXFP14N55X2
Packaging: Tube
Produkt ist nicht verfügbar
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IXFK98N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_98n50p3_datasheet.pdf.pdf
IXFK98N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 98A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-264AA (IXFK)
Power Dissipation (Max): 1300W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Vgs(th) (Max) @ Id: 5V @ 8mA
Produkt ist nicht verfügbar
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IXTP110N12T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_110n12t2_datasheet.pdf.pdf
IXTP110N12T2
Hersteller: IXYS
Description: MOSFET N-CH 120V 110A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 517W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXGA48N60A3-TRL 238_IXGA48N60A3.pdf
IXGA48N60A3-TRL
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 4000 Stücke:
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800+4.26 EUR
1600+4.06 EUR
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IXGA48N60B3-TRL
IXGA48N60B3-TRL
Hersteller: IXYS
Description: IGBT PT 600V 48A TO-263
Power - Max: 300 W
Current - Collector Pulsed (Icm): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Part Status: Active
Gate Charge: 115 nC
Test Condition: 480V, 30A, 5Ohm, 15V
Switching Energy: 840µJ (on), 660µJ (off)
Td (on/off) @ 25°C: 22ns/130ns
IGBT Type: PT
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Reverse Recovery Time (trr): 25 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IXFN48N50 Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-4-N50-Datasheet.PDF?assetguid=887754DE-8CB1-4B0F-B5B9-F6A862E6ADE4
IXFN48N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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DLA100B800LB-TRR media?resourcetype=datasheets&itemid=065b1604-0bcb-4ad1-9912-f1c3d8bb4a36&filename=littelfuse%2520power%2520semiconductors%2520dla100b800lb%2520datasheet.pdf
Hersteller: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 124 A
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Produkt ist nicht verfügbar
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DLA100B800LB-TUB
Hersteller: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Produkt ist nicht verfügbar
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DLA100B1200LB-TUB Littelfuse-Power-Semiconductors-DLA100B1200LB-Datasheet?assetguid=b03f3e7e-f4c0-46bb-b551-b31465465f61
DLA100B1200LB-TUB
Hersteller: IXYS
Description: BRIDGE RECT 1P 1.2KV 132A SMPD.B
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 132 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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IXFN200N07 description 97533.pdf
IXFN200N07
Hersteller: IXYS
Description: MOSFET N-CH 70V 200A SOT-227B
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DSEI60-12A Littelfuse-Power-Semiconductors-DSEI60-12A-Datasheet?assetguid=bcca0668-1e7f-4db6-9ef6-0ebe59060c4d
DSEI60-12A
Hersteller: IXYS
Description: DIODE STANDARD 1200V 52A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 52A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 60 A
Current - Reverse Leakage @ Vr: 2.2 mA @ 1200 V
Produkt ist nicht verfügbar
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DSEI25-06A
DSEI25-06A
Hersteller: IXYS
Description: DIODE STANDARD 600V 25A TO2202
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 25A
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
auf Bestellung 2066 Stücke:
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4+5.26 EUR
50+2.63 EUR
100+2.38 EUR
500+1.96 EUR
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DSEI2X31-12B description littelfuse-power-semiconductors-dsei2x31-12b-datasheet?assetguid=ee481cfe-0348-4b51-bb49-6f08b9d0ed4e
DSEI2X31-12B
Hersteller: IXYS
Description: DIODE MOD GP 1200V 28A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.54 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
auf Bestellung 6036 Stücke:
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1+53.28 EUR
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100+38.59 EUR
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DSEI25-06AS-TRL
DSEI25-06AS-TRL
Hersteller: IXYS
Description: DIODE STANDARD 600V 25A TO263
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 25A
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DSEI25-06AS-TUB
DSEI25-06AS-TUB
Hersteller: IXYS
Description: DIODE STANDARD 600V 25A TO263
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 25A
Capacitance @ Vr, F: 20pF @ 400V, 1MHz
auf Bestellung 100 Stücke:
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3+8 EUR
50+4.53 EUR
100+4.32 EUR
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IXTQ69N30PM a
Hersteller: IXYS
Description: MOSFET N-CH 300V 25A TO3PFP
Produkt ist nicht verfügbar
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IXFK50N85X DS100704DIXFTFHFK50N85XHV.pdf
IXFK50N85X
Hersteller: IXYS
Description: MOSFET N-CH 850V 50A TO264
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
auf Bestellung 95 Stücke:
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1+34.91 EUR
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MDNA210UB2200PTED
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
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MDNA280UB2200PTED
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Produkt ist nicht verfügbar
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IXTA3N120HV-TRL littelfuse-discrete-mosfets-ixta3n120hv-datasheet?assetguid=6a632cdd-ab5c-4fd5-85f6-2f91fead1e78
IXTA3N120HV-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263HV
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA3N120-TRR littelfuse-discrete-mosfets-ixtp3n120-datasheet?assetguid=62ac5571-cff4-4f49-9438-bfa628c5f974
IXTA3N120-TRR
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IXYY8N90C3-TRL littelfuse-discrete-igbts-ixy-8n90c3-datasheet?assetguid=11d4bd5c-8ae2-405e-8bec-58f631ef5fbe
IXYY8N90C3-TRL
Hersteller: IXYS
Description: IGBT PT 900V 20A TO-252AA
Power - Max: 125 W
Current - Collector Pulsed (Icm): 48 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 13.3 nC
Test Condition: 450V, 8A, 30Ohm, 15V
Switching Energy: 460µJ (on), 180µJ (off)
Td (on/off) @ 25°C: 16ns/40ns
IGBT Type: PT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Reverse Recovery Time (trr): 20 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MCD162-16io1B
MCD162-16io1B
Hersteller: IXYS
Description: SCR MODULE 1.6KV 300A Y4-M6
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 300 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 181 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Box
auf Bestellung 540 Stücke:
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AnzahlPrivatkunde
6+97.7 EUR
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DAA10EM1800PZ-TRL media?resourcetype=datasheets&itemid=8b1378fb-444d-4854-bf2e-b3d297066d3b&filename=Littelfuse-Power-Semiconductors-DAA10EM1800PZ-Datasheet
DAA10EM1800PZ-TRL
Hersteller: IXYS
Description: DIODE AVAL 1.8KV 10A TO263HV
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263HV
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
Produkt ist nicht verfügbar
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DAA10EM1800PZ-TUB media?resourcetype=datasheets&itemid=8b1378fb-444d-4854-bf2e-b3d297066d3b&filename=Littelfuse-Power-Semiconductors-DAA10EM1800PZ-Datasheet
DAA10EM1800PZ-TUB
Hersteller: IXYS
Description: DIODE AVAL 1.8KV 10A TO263HV
Current - Reverse Leakage @ Vr: 10 µA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.21 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263HV
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Technology: Avalanche
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IXGN200N170 littelfuse-discrete-igbts-ixgn200n170-datasheet?assetguid=7e04c6cf-4f13-4544-a332-6f459d9482a9
IXGN200N170
Hersteller: IXYS
Description: IGBT 1700V 280A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 133 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 37ns/320ns
Switching Energy: 28mJ (on), 30mJ (off)
Test Condition: 850V, 100A, 1Ohm, 15V
Gate Charge: 540 nC
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 1050 A
Power - Max: 1250 W
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+125.19 EUR
10+96.46 EUR
100+95.96 EUR
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IXYH50N120C3D1 DS100388DIXYH50N120C3D1.pdf
IXYH50N120C3D1
Hersteller: IXYS
Description: IGBT 1200V 90A TO-247
Power - Max: 625 W
Current - Collector Pulsed (Icm): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 90 A
Part Status: Active
Gate Charge: 142 nC
Test Condition: 600V, 50A, 5Ohm, 15V
Switching Energy: 3mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 28ns/133ns
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 324 Stücke:
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30+18.05 EUR
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IXYH50N120C3 DS100343CIXYH50N120C3.pdf
IXYH50N120C3
Hersteller: IXYS
Description: IGBT 1200V 100A TO-247
Supplier Device Package: TO-247 (IXYH)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 750 W
Current - Collector Pulsed (Icm): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 142 nC
Test Condition: 600V, 50A, 5Ohm, 15V
Switching Energy: 3mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 28ns/133ns
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IXGT72N60A3-TRL
Hersteller: IXYS
Description: IGBT PT 600V 75A TO-268
Power - Max: 540 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
Gate Charge: 230 nC
Test Condition: 480V, 50A, 3Ohm, 15V
Switching Energy: 1.38mJ (on), 3.5mJ (off)
Td (on/off) @ 25°C: 31ns/320ns
IGBT Type: PT
Supplier Device Package: TO-268
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Reverse Recovery Time (trr): 34 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IXYH30N65C3H1 littelfuse_discrete_igbts_xpt_ixy_30n65c3h1_datasheet.pdf.pdf
IXYH30N65C3H1
Hersteller: IXYS
Description: IGBT 650V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Produkt ist nicht verfügbar
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IXFA3N120-TRR
IXFA3N120-TRR
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
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MCC95-14IO1 littelfuse-power-semiconductors-mcc95-14io1-datasheet?assetguid=7454aafc-45a9-4439-be28-a68a9e0ca580
MCC95-14IO1
Hersteller: IXYS
Description: SCR MODULE 1.4KV 182A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 182 A
Voltage - Off State: 1.4 kV
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1+72.09 EUR
36+48.94 EUR
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MCC95-16IO1 MCC9516io1.pdf
MCC95-16IO1
Hersteller: IXYS
Description: SCR MODULE 1.6KV 182A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2430A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 182 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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MMIX1X340N65B4 DS100598A(MMIX1X340N65B4).pdf
Hersteller: IXYS
Description: MOSFET N-CH
auf Bestellung 980 Stücke:
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IXA4I1200UC-TRL IXA4I1200UC.pdf
IXA4I1200UC-TRL
Hersteller: IXYS
Description: IGBT 1200V 9A 45W TO252AA
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 9 A
Gate Charge: 12 nC
Test Condition: 600V, 3A, 330Ohm, 15V
Switching Energy: 400µJ (on), 300µJ (off)
IGBT Type: PT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IXA4IF1200UC-TRL littelfuse_discrete_igbts_xpt_ixa4if1200uc_datasheet.pdf.pdf
IXA4IF1200UC-TRL
Hersteller: IXYS
Description: IGBT 1200V 9A 45W TO252AA
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 9 A
Gate Charge: 12 nC
Test Condition: 600V, 3A, 330Ohm, 15V
Switching Energy: 400µJ (on), 300µJ (off)
IGBT Type: PT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Reverse Recovery Time (trr): 350 ns
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IXA4I1200UC-TUB media?resourcetype=datasheets&itemid=d9845082-6932-4641-bff2-4975637e4e13&filename=littelfuse%2520power%2520semiconductors%2520ixa4i1200uc%2520datasheet.pdf
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-252D
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 400µJ (on), 300µJ (off)
Test Condition: 600V, 3A, 330Ohm, 15V
Gate Charge: 12 nC
Current - Collector (Ic) (Max): 9 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 45 W
auf Bestellung 1260 Stücke:
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AnzahlPrivatkunde
350+2.56 EUR
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IXA4IF1200UC-TUB
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-252D
Current - Collector (Ic) (Max): 9 A
Gate Charge: 12 nC
Test Condition: 600V, 3A, 330Ohm, 15V
Switching Energy: 400µJ (on), 300µJ (off)
Td (on/off) @ 25°C: 70ns/250ns
IGBT Type: PT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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DSEI2X60-04C media?resourcetype=datasheets&itemid=09f9b2c2-a97d-49db-a728-472a9e688f56&filename=littelfuse%2520power%2520semiconductors%2520dsei2x60-04c%2520datasheet.pdf
DSEI2X60-04C
Hersteller: IXYS
Description: DIODE MODULE GP 400V 60A SOT227B
Current - Reverse Leakage @ Vr: 200 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227B
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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DCG17P1200HR
Hersteller: IXYS
Description: POWER DIODE DISC-SCHOTTKY ISOPLU
Produkt ist nicht verfügbar
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IXFR16N90Q
Hersteller: IXYS
Description: MOSFET N-CH ISOPLUS247
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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DSP8-12S-TRL DSP8-12S.pdf
DSP8-12S-TRL
Hersteller: IXYS
Description: DIODE ARRAY GP 1200V 11A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 11A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 7 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Produkt ist nicht verfügbar
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DSEP29-06AS-TRL Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060
DSEP29-06AS-TRL
Hersteller: IXYS
Description: DIODE STANDARD 600V 30A TO263AA
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AA
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DSEP29-06AS-TUB Littelfuse-Power-Semiconductors-DSEP29-06AS-Datasheet?assetguid=6f2375d2-6e96-43c3-a6cd-31a48417f060
DSEP29-06AS-TUB
Hersteller: IXYS
Description: DIODE ARRAY GP 600V TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.94 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Produkt ist nicht verfügbar
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DLA40IM800PC-TUB DLA40IM800PC.pdf
DLA40IM800PC-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 800V 40A TO263
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 40A
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IXTF6N200P3 DS100716(IXTF6N200P3).pdf
Hersteller: IXYS
Description: MOSFET N-CH
Produkt ist nicht verfügbar
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IXTF2N300P3 DS100712(IXTF2N300P3).pdf
Hersteller: IXYS
Description: MOSFET N-CH
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IXFR20N80Q
Hersteller: IXYS
Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Produkt ist nicht verfügbar
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IXFX20N80Q
IXFX20N80Q
Hersteller: IXYS
Description: MOSFET N-CH 800V 20A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Produkt ist nicht verfügbar
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IXYP24N100C4 littelfuse-discrete-igbts-ixy-24n100c4-datasheet?assetguid=9e764d41-4809-4a1d-9928-1cb6ca6c9107
IXYP24N100C4
Hersteller: IXYS
Description: IGBT PT 1000V 76A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/147ns
Switching Energy: 3.6mJ (on), 1mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 132 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXFN24N100F description
Hersteller: IXYS
Description: MOSFET N-CH 1000V 24A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFX24N100F
Hersteller: IXYS
Description: MOSFET N-CH 1000V 24A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY08N100P-TRL
Hersteller: IXYS
Description: IXTY08N100P TRL
Produkt ist nicht verfügbar
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IXYH75N65C3H1 littelfuse-discrete-igbts-ixyh75n65c3h1-datasheet?assetguid=224dfb65-7587-4f7c-8b16-0c4c9033fed6
IXYH75N65C3H1
Hersteller: IXYS
Description: IGBT PT 650V 170A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
auf Bestellung 1380 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+32.44 EUR
30+20.1 EUR
120+17.41 EUR
510+16.55 EUR
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IXYH75N65C3 media?resourcetype=datasheets&itemid=880AF1F0-BCE9-40BF-B617-AC7060048A7A&filename=Littelfuse-Discrete-IGBTs-XPT-IXYH75N65C3-Datasheet.PDF
IXYH75N65C3
Hersteller: IXYS
Description: IGBT PT 650V 170A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
Produkt ist nicht verfügbar
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IXYH50N65C3D1 media?resourcetype=datasheets&itemid=834EE2EA-9CEA-402F-8D05-EFCC34AF555B&filename=Littelfuse-Discrete-IGBTs-XPT-IXYH50N65C3D1-Datasheet.PDF
IXYH50N65C3D1
Hersteller: IXYS
Description: IGBT 650V 132A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 800µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
Produkt ist nicht verfügbar
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IXFN27N120SK
Hersteller: IXYS
Description: SICARBIDE-DISCRETE MOSFET SOT-22
Produkt ist nicht verfügbar
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MIXA80W1200PTEH
Hersteller: IXYS
Description: IGBT MODULE SIXPACK E3-PACK-PF
Produkt ist nicht verfügbar
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IXFY30N25X3 littelfuse-discrete-mosfets-ixf-30n25x3-datasheet?assetguid=f98c5907-f43b-4415-a418-45a0a7855e6d
IXFY30N25X3
Hersteller: IXYS
Description: MOSFET N-CH 250V 30A TO252AA
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 6203 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.22 EUR
70+7.39 EUR
140+6.81 EUR
560+6.06 EUR
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IXTQ36P15P littelfuse-discrete-mosfets-ixt-36p15p-datasheet?assetguid=5c8451ac-89cf-436c-a647-4ce257cd7c86
IXTQ36P15P
Hersteller: IXYS
Description: MOSFET P-CH 150V 36A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
auf Bestellung 697 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.22 EUR
30+10.75 EUR
120+9.1 EUR
510+7.9 EUR
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IXFP14N55X2
Hersteller: IXYS
Description: IXFP14N55X2
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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