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IXGM17N100A IXYS littelfuse_discrete_igbts_pt_ixgh17n100_datasheet.pdf.pdf Description: IGBT 1000V 34A 150W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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IXBOD2-17R IXYS Description: POWER DIODE DISC-OTHERS FP-CASE
Packaging: Tube
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - On State: 1.3 V
Supplier Device Package: FP-Case
Produkt ist nicht verfügbar
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DHG10IM1800UZ-TUB IXYS Description: SONIC-1800V-10A- DPAK-HV-TUBE
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DHG10IM1800UZ-TRL IXYS Description: SONIC-1800V-10A- DPAK-HV-REEL
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W1980JK180 IXYS Description: DIODE GEN PURP 1.8KV 1980A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1980A
Supplier Device Package: W113
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
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IXFA30N25X3 IXFA30N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_30n25x3_datasheet.pdf.pdf Description: MOSFET N-CHANNEL 250V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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IXYP15N65B3D1 IXYS Description: IGBT TO220AB
Packaging: Tube
Part Status: Active
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DMA80IM1600HB DMA80IM1600HB IXYS DMA80IM1600HB.pdf Description: PWR DIODE RECT 80A 1600V TO-247
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N0910LC260 IXYS media?resourcetype=datasheets&itemid=aa249cdc-6382-4a83-aed0-009d552ad579&filename=littelfuse-discrete-thyristors-phase-control-n0910lc2-0-datasheet Description: SCR 2.6KV 1788A W10
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10100A @ 50Hz
Current - On State (It (AV)) (Max): 910 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.07 V
Current - Off State (Max): 60 mA
Supplier Device Package: W10
Current - On State (It (RMS)) (Max): 1788 A
Voltage - Off State: 2.6 kV
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N1174JK220 IXYS Description: SCR 2.2KV 2313A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - On State (It (AV)) (Max): 1174 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.46 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2313 A
Voltage - Off State: 2.2 kV
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IX4310N IXYS Description: HIGH SPEED LOW-SIDE DRIVER 2A 8L
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IX4310NTR IXYS Description: HIGH SPEED LOW-SIDE DRIVER 2A 8L
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N5320FE450 IXYS Description: SCR 4.5KV W119
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N5320FE420 IXYS Description: SCR 4.2KV W119
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IXFY26N30X3 IXFY26N30X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_26n30x3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 26A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
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MDD26-14N1B MDD26-14N1B IXYS MDD26-14N1B.pdf Description: DIODE MODULE 1.4KV 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
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IXYP20N120A4 IXYP20N120A4 IXYS littelfuse-discrete-igbts-ixy-20n120a4-datasheet?assetguid=b40a9e42-70b2-4715-a4d2-5a93d0449e25 Description: IGBT PT 1200V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
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IXYA20N120C3HV-TRL IXYA20N120C3HV-TRL IXYS Description: IGBT 1200V 40A TO-263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
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IXYP20N120C4 IXYP20N120C4 IXYS littelfuse-discrete-igbts-ixy-20n120c4-datasheet?assetguid=3c16feb5-2ff7-4546-a254-e439f5e43f0d Description: IGBT 1200V 68A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
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IXGM40N60 IXYS Description: IGBT 600V 75A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 250 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
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N0530YN250 IXYS Description: SCR 2.5KV 1040A W91
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Current - On State (It (AV)) (Max): 530 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3.5 V
Current - Off State (Max): 70 mA
Supplier Device Package: W91
Current - On State (It (RMS)) (Max): 1040 A
Voltage - Off State: 2.5 kV
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N1075LN180 IXYS Description: SCR 1.8KV 2415A
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IXYP20N120B4 IXYP20N120B4 IXYS media?resourcetype=datasheets&amp;itemid=aeb4cb01-5ee7-4115-97e3-a99b8c505c4e&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n120b4_datasheet.pdf Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
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IXXH30N60C3 IXYS media?resourcetype=datasheets&itemid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5&filename=littelfuse_discrete_igbts_xpt_ixxh30n60c3_datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
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IXTA90N075T2-TRL IXTA90N075T2-TRL IXYS Description: MOSFET N-CH 75V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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E1780TG65E E1780TG65E IXYS littelfuse_discrete_diodes_fast_recovery_e1780tg65e_datasheet.pdf.pdf Description: DIODE GEN PURP 3.6KV 1780A -
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IXTA200N055T2-7 IXYS Description: MOSFET N-CH 55V 200A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
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IXTA200N055T2-TRL IXTA200N055T2-TRL IXYS Description: MOSFET N-CH 55V 200A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
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IXBH42N300HV IXYS Description: DISC IGBT BIMSFT-VERYHIVOLT TO-2
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IXBH32N300HV IXYS media?resourcetype=datasheets&amp;itemid=1eb01c74-889c-4efa-95d9-e741e6c946af&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_32n300hv_datasheet.pdf Description: DISC IGBT BIMSFT-VERYHIVOLT TO-2
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247HV
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
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IXTN240N075L2 IXTN240N075L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixtn240n075_datasheet.pdf.pdf Description: MOSFET N-CH 75V 225A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFH98N60X3 IXFH98N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh98n60x3_datasheet.pdf.pdf Description: MOSFET ULTRA JCT 600V 98A TO247
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IXFH78N60X3 IXFH78N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh78n60x3_datasheet.pdf.pdf Description: MOSFET ULTRA JCT 600V 78A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 38mOhm @ 39A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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CLA16E800PN IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA16E800PN.pdf Description: SCR 800V 16A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.14 V
Supplier Device Package: TO-220ABFP
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
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CLA16E1200PN IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA16E1200PN.pdf Description: SCR 1.2KV 16A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.14 V
Supplier Device Package: TO-220ABFP
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 1.2 kV
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DSB10P60PN IXYS Description: DIODE SCHOTTKY 60V 10A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 149pF @ 12V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220ABFP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Produkt ist nicht verfügbar
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M1494NC250 M1494NC250 IXYS Description: DIODE STANDARD 2500V 1494A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.9 µs
Technology: Standard
Current - Average Rectified (Io): 1494A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.34 V @ 4500 A
Current - Reverse Leakage @ Vr: 85 mA @ 2500 V
Produkt ist nicht verfügbar
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M0659LC450 IXYS Description: FAST DIODE
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IXFA26N30X3 IXFA26N30X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_26n30x3_datasheet.pdf.pdf Description: MOSFET N-CH 300V 26A TO263AA
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ITF48IF1200HR ITF48IF1200HR IXYS media?resourcetype=datasheets&itemid=7cc07480-b755-4325-b4fc-520c77c2bae4&filename=littelfuse_discrete_igbts_xpt_itf48if1200hr_datasheet.pdf Description: IGBT TRENCH 1200V 72A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: ISO247
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 3mJ (on), 2.4mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 175 nC
Part Status: Active
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Produkt ist nicht verfügbar
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CS19-12HO1S-TRL CS19-12HO1S-TRL IXYS media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet Description: SCR 1.2KV 29A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 19 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-263AA
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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CS19-12HO1S-TRL CS19-12HO1S-TRL IXYS media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet Description: SCR 1.2KV 29A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 19 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-263AA
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 1.2 kV
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IXTA6N100D2-TRL IXTA6N100D2-TRL IXYS Description: MOSFET N-CH 1000V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
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IXTA6N100D2HV IXTA6N100D2HV IXYS media?resourcetype=datasheets&itemid=d5edabee-7480-4970-a92b-1b6b944040ed&filename=littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta6n100d2hv_datasheet.pdf Description: MOSFET N-CH 1000V 6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
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FII24N170AH1 IXYS FII24N170AH1.pdf Description: IGBT H BRIDGE 1700V 18A I4PAK5
Packaging: Tube
Package / Case: i4-Pac™-4, Isolated
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
NTC Thermistor: No
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.4 nF @ 25 V
Produkt ist nicht verfügbar
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DPG20C400PC-TUB DPG20C400PC-TUB IXYS Description: POWER DIODE DISCRETES-FRED TO-26
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DPG20C400PC-TRL DPG20C400PC-TRL IXYS DPG20C400PC.pdf Description: DIODE ARRAY GP 400V 10A TO263
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MKE38RK600DFEL-TRR MKE38RK600DFEL-TRR IXYS littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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MKE38RK600DFEL-TRR MKE38RK600DFEL-TRR IXYS littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf Description: MOSFET N-CH 600V 50A SMPD
Packaging: Cut Tape (CT)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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IXFP130N15X3 IXFP130N15X3 IXYS DS100808B(IXFA-FP-FH130N15X3).pdf Description: MOSFET N-CH 150V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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MDMA120U1600VA MDMA120U1600VA IXYS Description: 3-PH. REC. BRIDGE, B6U
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 1.42 V @ 120 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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IXA70R1200NA IXA70R1200NA IXYS media?resourcetype=datasheets&itemid=fc5d3dbd-88b8-4127-8521-3b8c1f32f4ed&filename=littelfuse_discrete_igbts_xpt_ixa70r1200na_datasheet.pdf Description: DISC IGBT XPT-GENX3 SOT-227B(MIN
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 4.5mJ (on), 5.5mJ (off)
Test Condition: 600V, 50A, 15Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
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R0577YC12E IXYS Description: SCR 1.2KV 1169A W58
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R0577YC12D IXYS Description: SCR 1.2KV 1169A W58
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R0577YC12C IXYS Description: SCR 1.2KV 1169A W58
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N4165EE450 IXYS Description: SCR 4.5KV W108
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IXYK120N120B3 IXYS media?resourcetype=datasheets&itemid=18553f1c-eef0-4d23-a446-4aba83b01353&filename=littelfuse_discrete_igbts_xpt_ixy_120n120b3_datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-264(3)
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
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IXYK110N120C4 IXYK110N120C4 IXYS littelfuse-discrete-igbts-xpt-ixyk110n120c4-datasheet?assetguid=e811414b-e767-4e99-a24a-d3da268d9109 Description: IGBT 1200V 310A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
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IXYX110N120B4 IXYX110N120B4 IXYS littelfuse-discrete-igbts-xpt-ixyx110n120b4-datasheet?assetguid=3690078d-f346-41db-b4c2-00adc54c6541 Description: IGBT 1200V 340A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 45ns/390ns
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1360 W
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IXYX110N120C4 IXYX110N120C4 IXYS littelfuse-discrete-igbts-xpt-ixyx110n120c4-datasheet?assetguid=9eb515e0-1e98-41ab-a832-9f7c6d9306a4 Description: IGBT 1200V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
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IXGM17N100A littelfuse_discrete_igbts_pt_ixgh17n100_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT 1000V 34A 150W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 3mJ (off)
Test Condition: 800V, 17A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 150 W
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IXBOD2-17R
Hersteller: IXYS
Description: POWER DIODE DISC-OTHERS FP-CASE
Packaging: Tube
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - On State: 1.3 V
Supplier Device Package: FP-Case
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DHG10IM1800UZ-TUB
Hersteller: IXYS
Description: SONIC-1800V-10A- DPAK-HV-TUBE
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DHG10IM1800UZ-TRL
Hersteller: IXYS
Description: SONIC-1800V-10A- DPAK-HV-REEL
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W1980JK180
Hersteller: IXYS
Description: DIODE GEN PURP 1.8KV 1980A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1980A
Supplier Device Package: W113
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
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IXFA30N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_30n25x3_datasheet.pdf.pdf
IXFA30N25X3
Hersteller: IXYS
Description: MOSFET N-CHANNEL 250V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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2+12.57 EUR
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100+9.40 EUR
500+8.19 EUR
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IXYP15N65B3D1
Hersteller: IXYS
Description: IGBT TO220AB
Packaging: Tube
Part Status: Active
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DMA80IM1600HB DMA80IM1600HB.pdf
DMA80IM1600HB
Hersteller: IXYS
Description: PWR DIODE RECT 80A 1600V TO-247
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N0910LC260 media?resourcetype=datasheets&itemid=aa249cdc-6382-4a83-aed0-009d552ad579&filename=littelfuse-discrete-thyristors-phase-control-n0910lc2-0-datasheet
Hersteller: IXYS
Description: SCR 2.6KV 1788A W10
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10100A @ 50Hz
Current - On State (It (AV)) (Max): 910 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.07 V
Current - Off State (Max): 60 mA
Supplier Device Package: W10
Current - On State (It (RMS)) (Max): 1788 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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N1174JK220
Hersteller: IXYS
Description: SCR 2.2KV 2313A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - On State (It (AV)) (Max): 1174 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.46 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2313 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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IX4310N
Hersteller: IXYS
Description: HIGH SPEED LOW-SIDE DRIVER 2A 8L
Produkt ist nicht verfügbar
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IX4310NTR
Hersteller: IXYS
Description: HIGH SPEED LOW-SIDE DRIVER 2A 8L
Produkt ist nicht verfügbar
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N5320FE450
Hersteller: IXYS
Description: SCR 4.5KV W119
Produkt ist nicht verfügbar
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N5320FE420
Hersteller: IXYS
Description: SCR 4.2KV W119
Produkt ist nicht verfügbar
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IXFY26N30X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_26n30x3_datasheet.pdf.pdf
IXFY26N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 26A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.24 EUR
10+7.40 EUR
100+6.06 EUR
Mindestbestellmenge: 3
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MDD26-14N1B MDD26-14N1B.pdf
MDD26-14N1B
Hersteller: IXYS
Description: DIODE MODULE 1.4KV 36A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 36A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.38 V @ 80 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
auf Bestellung 25 Stücke:
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Anzahl Preis
1+47.15 EUR
10+43.49 EUR
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IXYP20N120A4 littelfuse-discrete-igbts-ixy-20n120a4-datasheet?assetguid=b40a9e42-70b2-4715-a4d2-5a93d0449e25
IXYP20N120A4
Hersteller: IXYS
Description: IGBT PT 1200V 80A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXYA20N120C3HV-TRL
IXYA20N120C3HV-TRL
Hersteller: IXYS
Description: IGBT 1200V 40A TO-263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
Produkt ist nicht verfügbar
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IXYP20N120C4 littelfuse-discrete-igbts-ixy-20n120c4-datasheet?assetguid=3c16feb5-2ff7-4546-a254-e439f5e43f0d
IXYP20N120C4
Hersteller: IXYS
Description: IGBT 1200V 68A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXGM40N60
Hersteller: IXYS
Description: IGBT 600V 75A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Test Condition: 480V, 40A, 22Ohm, 15V
Gate Charge: 250 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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N0530YN250
Hersteller: IXYS
Description: SCR 2.5KV 1040A W91
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7000A @ 50Hz
Current - On State (It (AV)) (Max): 530 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3.5 V
Current - Off State (Max): 70 mA
Supplier Device Package: W91
Current - On State (It (RMS)) (Max): 1040 A
Voltage - Off State: 2.5 kV
Produkt ist nicht verfügbar
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N1075LN180
Hersteller: IXYS
Description: SCR 1.8KV 2415A
auf Bestellung 6 Stücke:
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IXYP20N120B4 media?resourcetype=datasheets&amp;itemid=aeb4cb01-5ee7-4115-97e3-a99b8c505c4e&amp;filename=littelfuse_discrete_igbts_xpt_ixy_20n120b4_datasheet.pdf
IXYP20N120B4
Hersteller: IXYS
Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXXH30N60C3 media?resourcetype=datasheets&itemid=a74a7c9f-55b8-41f8-9782-8bc72a9bd8b5&filename=littelfuse_discrete_igbts_xpt_ixxh30n60c3_datasheet.pdf
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
Produkt ist nicht verfügbar
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IXTA90N075T2-TRL
IXTA90N075T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 75V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 45A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
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E1780TG65E littelfuse_discrete_diodes_fast_recovery_e1780tg65e_datasheet.pdf.pdf
E1780TG65E
Hersteller: IXYS
Description: DIODE GEN PURP 3.6KV 1780A -
Produkt ist nicht verfügbar
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IXTA200N055T2-7
Hersteller: IXYS
Description: MOSFET N-CH 55V 200A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7 (IXTA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA200N055T2-TRL
IXTA200N055T2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 55V 200A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
Produkt ist nicht verfügbar
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IXBH42N300HV
Hersteller: IXYS
Description: DISC IGBT BIMSFT-VERYHIVOLT TO-2
Produkt ist nicht verfügbar
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IXBH32N300HV media?resourcetype=datasheets&amp;itemid=1eb01c74-889c-4efa-95d9-e741e6c946af&amp;filename=littelfuse_discrete_igbts_bimosfet_ixb_32n300hv_datasheet.pdf
Hersteller: IXYS
Description: DISC IGBT BIMSFT-VERYHIVOLT TO-2
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Supplier Device Package: TO-247HV
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 400 W
Produkt ist nicht verfügbar
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IXTN240N075L2 littelfuse_discrete_mosfets_n-channel_linear_ixtn240n075_datasheet.pdf.pdf
IXTN240N075L2
Hersteller: IXYS
Description: MOSFET N-CH 75V 225A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+95.23 EUR
10+84.85 EUR
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IXFH98N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh98n60x3_datasheet.pdf.pdf
IXFH98N60X3
Hersteller: IXYS
Description: MOSFET ULTRA JCT 600V 98A TO247
auf Bestellung 194 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.76 EUR
10+26.42 EUR
100+22.32 EUR
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IXFH78N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh78n60x3_datasheet.pdf.pdf
IXFH78N60X3
Hersteller: IXYS
Description: MOSFET ULTRA JCT 600V 78A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 38mOhm @ 39A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.78 EUR
10+20.94 EUR
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CLA16E800PN Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA16E800PN.pdf
Hersteller: IXYS
Description: SCR 800V 16A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.14 V
Supplier Device Package: TO-220ABFP
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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CLA16E1200PN Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA16E1200PN.pdf
Hersteller: IXYS
Description: SCR 1.2KV 16A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 180A, 195A
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.14 V
Supplier Device Package: TO-220ABFP
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 1.2 kV
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+3.97 EUR
Mindestbestellmenge: 50
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DSB10P60PN
Hersteller: IXYS
Description: DIODE SCHOTTKY 60V 10A TO220ABFP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 149pF @ 12V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220ABFP
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 10 A
Current - Reverse Leakage @ Vr: 4 mA @ 60 V
Produkt ist nicht verfügbar
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M1494NC250
M1494NC250
Hersteller: IXYS
Description: DIODE STANDARD 2500V 1494A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.9 µs
Technology: Standard
Current - Average Rectified (Io): 1494A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.34 V @ 4500 A
Current - Reverse Leakage @ Vr: 85 mA @ 2500 V
Produkt ist nicht verfügbar
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M0659LC450
Hersteller: IXYS
Description: FAST DIODE
auf Bestellung 12 Stücke:
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IXFA26N30X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_26n30x3_datasheet.pdf.pdf
IXFA26N30X3
Hersteller: IXYS
Description: MOSFET N-CH 300V 26A TO263AA
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.25 EUR
Mindestbestellmenge: 3
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ITF48IF1200HR media?resourcetype=datasheets&itemid=7cc07480-b755-4325-b4fc-520c77c2bae4&filename=littelfuse_discrete_igbts_xpt_itf48if1200hr_datasheet.pdf
ITF48IF1200HR
Hersteller: IXYS
Description: IGBT TRENCH 1200V 72A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: ISO247
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 3mJ (on), 2.4mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 175 nC
Part Status: Active
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 390 W
Produkt ist nicht verfügbar
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CS19-12HO1S-TRL media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet
CS19-12HO1S-TRL
Hersteller: IXYS
Description: SCR 1.2KV 29A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 19 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-263AA
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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CS19-12HO1S-TRL media?resourcetype=datasheets&itemid=87ae741a-fff5-4217-b553-69a020cd606c&filename=Littelfuse-Power-Semiconductors-CS19-12HO1S-Datasheet
CS19-12HO1S-TRL
Hersteller: IXYS
Description: SCR 1.2KV 29A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 19 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-263AA
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 1.2 kV
auf Bestellung 644 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.35 EUR
10+6.23 EUR
100+4.46 EUR
Mindestbestellmenge: 2
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IXTA6N100D2-TRL
IXTA6N100D2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1000V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA6N100D2HV media?resourcetype=datasheets&itemid=d5edabee-7480-4970-a92b-1b6b944040ed&filename=littelfuse_discrete_mosfets_n-channel_depletion_mode_ixta6n100d2hv_datasheet.pdf
IXTA6N100D2HV
Hersteller: IXYS
Description: MOSFET N-CH 1000V 6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
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FII24N170AH1 FII24N170AH1.pdf
Hersteller: IXYS
Description: IGBT H BRIDGE 1700V 18A I4PAK5
Packaging: Tube
Package / Case: i4-Pac™-4, Isolated
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
NTC Thermistor: No
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 140 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.4 nF @ 25 V
Produkt ist nicht verfügbar
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DPG20C400PC-TUB
DPG20C400PC-TUB
Hersteller: IXYS
Description: POWER DIODE DISCRETES-FRED TO-26
Produkt ist nicht verfügbar
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DPG20C400PC-TRL DPG20C400PC.pdf
DPG20C400PC-TRL
Hersteller: IXYS
Description: DIODE ARRAY GP 400V 10A TO263
Produkt ist nicht verfügbar
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MKE38RK600DFEL-TRR littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf
MKE38RK600DFEL-TRR
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
200+41.81 EUR
Mindestbestellmenge: 200
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MKE38RK600DFEL-TRR littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf
MKE38RK600DFEL-TRR
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Cut Tape (CT)
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+62.88 EUR
10+46.73 EUR
100+41.81 EUR
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IXFP130N15X3 DS100808B(IXFA-FP-FH130N15X3).pdf
IXFP130N15X3
Hersteller: IXYS
Description: MOSFET N-CH 150V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
auf Bestellung 1 Stücke:
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MDMA120U1600VA
MDMA120U1600VA
Hersteller: IXYS
Description: 3-PH. REC. BRIDGE, B6U
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 120 A
Voltage - Forward (Vf) (Max) @ If: 1.42 V @ 120 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
auf Bestellung 2 Stücke:
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Anzahl Preis
1+63.48 EUR
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IXA70R1200NA media?resourcetype=datasheets&itemid=fc5d3dbd-88b8-4127-8521-3b8c1f32f4ed&filename=littelfuse_discrete_igbts_xpt_ixa70r1200na_datasheet.pdf
IXA70R1200NA
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 SOT-227B(MIN
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 70ns/250ns
Switching Energy: 4.5mJ (on), 5.5mJ (off)
Test Condition: 600V, 50A, 15Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 350 W
Produkt ist nicht verfügbar
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R0577YC12E
Hersteller: IXYS
Description: SCR 1.2KV 1169A W58
Produkt ist nicht verfügbar
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R0577YC12D
Hersteller: IXYS
Description: SCR 1.2KV 1169A W58
Produkt ist nicht verfügbar
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R0577YC12C
Hersteller: IXYS
Description: SCR 1.2KV 1169A W58
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N4165EE450
Hersteller: IXYS
Description: SCR 4.5KV W108
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IXYK120N120B3 media?resourcetype=datasheets&itemid=18553f1c-eef0-4d23-a446-4aba83b01353&filename=littelfuse_discrete_igbts_xpt_ixy_120n120b3_datasheet.pdf
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-264(3)
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
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IXYK110N120C4 littelfuse-discrete-igbts-xpt-ixyk110n120c4-datasheet?assetguid=e811414b-e767-4e99-a24a-d3da268d9109
IXYK110N120C4
Hersteller: IXYS
Description: IGBT 1200V 310A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
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IXYX110N120B4 littelfuse-discrete-igbts-xpt-ixyx110n120b4-datasheet?assetguid=3690078d-f346-41db-b4c2-00adc54c6541
IXYX110N120B4
Hersteller: IXYS
Description: IGBT 1200V 340A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 45ns/390ns
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1360 W
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IXYX110N120C4 littelfuse-discrete-igbts-xpt-ixyx110n120c4-datasheet?assetguid=9eb515e0-1e98-41ab-a832-9f7c6d9306a4
IXYX110N120C4
Hersteller: IXYS
Description: IGBT 1200V 310A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
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