auf Bestellung 1420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 28.95 EUR |
| 10+ | 18.78 EUR |
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Technische Details IXYH85N120A4 IXYS
Description: IGBT PT 1200V 300A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 40 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A, Supplier Device Package: TO-247 (IXTH), IGBT Type: PT, Td (on/off) @ 25°C: 40ns/400ns, Switching Energy: 4.9mJ (on), 8.3mJ (off), Test Condition: 600V, 60A, 5Ohm, 15V, Gate Charge: 200 nC, Part Status: Active, Current - Collector (Ic) (Max): 300 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 520 A, Power - Max: 1150 W.
Weitere Produktangebote IXYH85N120A4 nach Preis ab 16.22 EUR bis 29.08 EUR
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IXYH85N120A4 | Hersteller : IXYS |
 Description: IGBT PT 1200V 300A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 40ns/400ns Switching Energy: 4.9mJ (on), 8.3mJ (off) Test Condition: 600V, 60A, 5Ohm, 15V Gate Charge: 200 nC Part Status: Active Current - Collector (Ic) (Max): 300 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 520 A Power - Max: 1150 W |
auf Bestellung 167 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH85N120A4 Produktcode: 197385
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IXYH85N120A4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 85A Power dissipation: 1.15kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 520A Mounting: THT Gate charge: 200nC Kind of package: tube Turn-on time: 73ns Turn-off time: 990ns |
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