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IXFX24N100F IXYS


DS98874B(IXFK-FX24N100F)-1109905.pdf Hersteller: IXYS
MOSFET IXFX24N100F 24A 1000V F-Class HiPerRF MOSFET
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Technische Details IXFX24N100F IXYS

Description: MOSFET N-CH 1000V 24A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V, Power Dissipation (Max): 560W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V.

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IXFX24N100F IXFX24N100F Hersteller : Littelfuse ds98874bixfk-fx24n100f.pdf Trans MOSFET N-CH 1KV 24A 3-Pin(3+Tab) PLUS 247
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IXFX24N100F IXFX24N100F Hersteller : IXYS Description: MOSFET N-CH 1000V 24A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH