IXYT55N120A4HV IXYS
Hersteller: IXYS
Description: IGBT PT 1200V 175A TO-268HV
Power - Max: 650 W
Current - Collector Pulsed (Icm): 350 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 175 A
Part Status: Active
Gate Charge: 110 nC
Test Condition: 600V, 40A, 5Ohm, 15V
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Td (on/off) @ 25°C: 23ns/300ns
IGBT Type: PT
Supplier Device Package: TO-268HV (IXYT)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Reverse Recovery Time (trr): 35 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 1+ | 21.54 EUR |
| 30+ | 13.15 EUR |
| 120+ | 11.31 EUR |
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Technische Details IXYT55N120A4HV IXYS
Description: IGBT PT 1200V 175A TO-268HV, Power - Max: 650 W, Current - Collector Pulsed (Icm): 350 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 175 A, Part Status: Active, Gate Charge: 110 nC, Test Condition: 600V, 40A, 5Ohm, 15V, Switching Energy: 2.3mJ (on), 5.3mJ (off), Td (on/off) @ 25°C: 23ns/300ns, IGBT Type: PT, Supplier Device Package: TO-268HV (IXYT), Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A, Reverse Recovery Time (trr): 35 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
Weitere Produktangebote IXYT55N120A4HV nach Preis ab 12.78 EUR bis 21.74 EUR
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IXYT55N120A4HV | Hersteller : IXYS |
IGBTs Discrete IGBT XPT Gen 4 1200V TO268HV |
auf Bestellung 135 Stücke: Lieferzeit 10-14 Tag (e) |
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