IXYT55N120A4HV IXYS
Hersteller: IXYSDescription: IGBT PT 1200V 175A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 20.52 EUR |
| 30+ | 16.61 EUR |
| 120+ | 15.63 EUR |
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Technische Details IXYT55N120A4HV IXYS
Description: IGBT PT 1200V 175A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 35 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A, Supplier Device Package: TO-268HV (IXYT), IGBT Type: PT, Td (on/off) @ 25°C: 23ns/300ns, Switching Energy: 2.3mJ (on), 5.3mJ (off), Test Condition: 600V, 40A, 5Ohm, 15V, Gate Charge: 110 nC, Part Status: Active, Current - Collector (Ic) (Max): 175 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 350 A, Power - Max: 650 W.
Weitere Produktangebote IXYT55N120A4HV nach Preis ab 14.26 EUR bis 20.68 EUR
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IXYT55N120A4HV | Hersteller : IXYS |
IGBT Transistors IGBT XPT GEN 4 1200V TO268HV |
auf Bestellung 263 Stücke: Lieferzeit 10-14 Tag (e) |
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