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IXTY48P05T-TRL

IXTY48P05T-TRL IXYS


littelfusediscretemosfetspchannelixt48p05td.pdf
Hersteller: IXYS
Description: MOSFET P-CH 50V 48A TO252
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
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Technische Details IXTY48P05T-TRL IXYS

Description: MOSFET P-CH 50V 48A TO252, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA.

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IXTY48P05T-TRL IXTY48P05T-TRL Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_4N80P_Datasheet.PDF MOSFET Modules IXTY48P05T TRL
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IXTY48P05T-TRL Hersteller : IXYS littelfusediscretemosfetspchannelixt48p05td.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 48A; 150W; DPAK,TO252AA
Case: DPAK; TO252AA
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Drain current: 48A
Gate-source voltage: 15V
On-state resistance: 30mΩ
Power dissipation: 150W
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