auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 81.38 EUR |
| 10+ | 77.18 EUR |
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Technische Details IXFN27N120SK IXYS
Category: Transistor modules MOSFET, Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC, Type of semiconductor module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 1.2kV, Drain current: 21.5A, Case: SOT227B, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 80mΩ, Technology: SiC, Kind of channel: enhancement, Gate charge: 160nC, Features of semiconductor devices: Kelvin terminal, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXFN27N120SK
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFN27N120SK | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 21.5A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 80mΩ Technology: SiC Kind of channel: enhancement Gate charge: 160nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IXFN27N120SK | Hersteller : IXYS | Description: SICARBIDE-DISCRETE MOSFET SOT-22 |
Produkt ist nicht verfügbar |
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IXFN27N120SK | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 21.5A; SOT227B; screw; SiC; 160nC Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 21.5A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 80mΩ Technology: SiC Kind of channel: enhancement Gate charge: 160nC Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
Produkt ist nicht verfügbar |