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DSEP60-12AZ-TUB

DSEP60-12AZ-TUB IXYS

media?resourcetype=datasheets&itemid=ae29b21c-ba26-4aa3-8fd1-609524a41060&filename=littelfuse%2520power%2520semiconductors%2520dsep60-12az%2520datasheet.pdf Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 60A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 600V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A
Current - Reverse Leakage @ Vr: 650 µA @ 1200 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.78 EUR
30+ 11 EUR
120+ 9.84 EUR
Mindestbestellmenge: 2
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Technische Details DSEP60-12AZ-TUB IXYS

Description: DIODE GEN PURP 1.2KV 60A TO268AA, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 80 ns, Technology: Standard, Capacitance @ Vr, F: 30pF @ 600V, 1MHz, Current - Average Rectified (Io): 60A, Supplier Device Package: TO-268AA (D3Pak-HV), Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.66 V @ 60 A, Current - Reverse Leakage @ Vr: 650 µA @ 1200 V.

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