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IXTH36P15P IXTH36P15P IXYS DS99791D(IXTA-P-H-Q36P15P).pdf Description: MOSFET P-CH 150V 36A TO247
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P0848YC06B IXYS media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf Description: SCR 600V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 600 V
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IXYH40N120A4 IXYH40N120A4 IXYS littelfuse_discrete_igbts_xpt_ixyh40n120a4_datasheet.pdf.pdf Description: IGBT 1200V 40A GENX4 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
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IXYT40N120A4HV IXYT40N120A4HV IXYS littelfuse_discrete_igbts_xpt_ixyt40n120a4hv_datasheet.pdf.pdf Description: IGBT PT 1200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
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IXG100IF1200HF IXYS Description: DISC IGBT XPT-GENX4 TO-247AD
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N0465WN160 IXYS Description: SCR 1.6KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.6 kV
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N3012ZC200 IXYS media?resourcetype=datasheets&amp;itemid=e2d6ba71-ef47-402a-9b6e-dd7e2f88e99d&amp;filename=littelfuse_discrete_thyristors_phase_control_n3012zc2_0_datasheet.pdf Description: SCR 2KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2 kV
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N3012ZC260 IXYS media?resourcetype=datasheets&amp;itemid=e2d6ba71-ef47-402a-9b6e-dd7e2f88e99d&amp;filename=littelfuse_discrete_thyristors_phase_control_n3012zc2_0_datasheet.pdf Description: SCR 2.6KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2.6 kV
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IXFH220N06T3 IXFH220N06T3 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_220n06t3_datasheet.pdf.pdf Description: MOSFET N-CH 60V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
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IXFD15N100-8X IXYS Description: MOSFET N-CH
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IXFJ15N100Q IXYS Description: MOSFET N-CH TO-220
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IXFR15N100Q IXYS Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
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IXTP8N70X2M IXTP8N70X2M IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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3+7.34 EUR
50+3.76 EUR
100+3.42 EUR
500+2.81 EUR
1000+2.62 EUR
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W0642WC160 IXYS Description: RECTIFIER DIODE
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IXBT2N250-TR IXYS Description: IGBT 2500V 5A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 30ns/70ns
Test Condition: 2000V, 2A, 47Ohm, 15V
Gate Charge: 10.6 nC
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
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MMIX4B22N300 MMIX4B22N300 IXYS Description: IGBT TRANS 3000V 38A
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 22A
NTC Thermistor: No
Supplier Device Package: 24-SMPD
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 35 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
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IXIDM1401_1505_M IXYS IXIDM1401_M_12Sep2017_DS.pdf Description: POWER MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
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IXIDM1403_1505_M IXYS IXIDM1403_1505_M_DS.pdf Description: POWER MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
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IXIDM1401 IXYS IXIDM1401_PB.pdf Description: ISOLATED GATE DRIVER
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Discontinued at Digi-Key
Current: 10 A
Voltage: 15 V
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IXIDM1401_1515_M IXYS IXIDM1401_M_12Sep2017_DS.pdf Description: DVR MOD +15V -15V 10A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
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IXIDM1401_1515_O IXYS IXIDM1401_O_12Sep2017_DS.pdf Description: DVR MOD +15V -15V 10A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
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IXIDM1403_1515_M IXYS IXIDM140(1,3)_Series_DS.pdf Description: DVR MOD +15V -15V 30A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
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IXIDM1403_1515_O IXYS IXIDM140(1,3)_Series_DS.pdf Description: DVR MOD +15V -15V 30A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
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W3842MC240 IXYS Description: DIODE STANDARD 2400V 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2400 V
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W3842MC280 IXYS Description: DIODE STANDARD 2800V 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2800 V
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IXXH40N65C4D1 IXXH40N65C4D1 IXYS littelfuse-discrete-igbts-ixxh40n65c4d1-datasheet?assetguid=ad9ee658-c83b-4415-9c5f-f037396e82d7 Description: IGBT PT 650V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/100ns
Switching Energy: 1.6mJ (on), 420µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 215 A
Power - Max: 455 W
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IXTC36P15P IXTC36P15P IXYS DS99792A(IXTC-IXTR36P15P).pdf Description: MOSFET P-CH 150V 22A ISOPLUS220
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DNA30EM2200PZ-TRL DNA30EM2200PZ-TRL IXYS media?resourcetype=datasheets&itemid=edb000bc-d1eb-4949-b232-32b836a04121&filename=Littelfuse-Power-Semiconductors-DNA30EM2200PZ-Datasheet Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
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DNA30EM2200PZ-TRL DNA30EM2200PZ-TRL IXYS media?resourcetype=datasheets&itemid=edb000bc-d1eb-4949-b232-32b836a04121&filename=Littelfuse-Power-Semiconductors-DNA30EM2200PZ-Datasheet Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
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DSEP29-12B IXYS Description: DIODE STANDARD 1200V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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IXYP30N65C3 IXYP30N65C3 IXYS media?resourcetype=datasheets&amp;itemid=15441231-dbab-4158-976c-a30abffe6233&amp;filename=littelfuse_discrete_igbts_xpt_ixy_30n65c3_datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 118 A
Power - Max: 270 W
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R1446NC12E IXYS Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
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R1446NC12D IXYS Description: SCR 1.2KV 2940A W11
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R1446NC12C IXYS media?resourcetype=datasheets&itemid=95ee1977-9d63-4928-b1da-727c32c0a486&filename=littelfuse_discrete_thyristors_fast_thyristors_r1446nc12__datasheet.pdf Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
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IXYX110N120A4 IXYX110N120A4 IXYS IXYX110N120A4_DS.pdf Description: IGBT PT 1200V 375A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
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IXYK110N120A4 IXYK110N120A4 IXYS Description: IGBT PT 1200V 375A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
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IXYN110N120A4 IXYN110N120A4 IXYS IXYN110N120A4_DS.pdf Description: IGBT PT 1200V 275A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
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IXFA20N85XHV-TRL IXFA20N85XHV-TRL IXYS Description: MOSFET N-CH 850V 20A TO263HV
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IXFJ20N85X IXFJ20N85X IXYS DS100772A(IXFJ20N85X).pdf Description: MOSFET N-CH 850V 9.5A ISO TO247
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N6012ZD020 IXYS media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf Description: SCR 200V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 200 V
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MCB40P1200LB-TUB IXYS media?resourcetype=datasheets&itemid=342f592b-5d45-4a74-859b-9516f656d799&filename=littelfuse-power-semiconductors-mcb40p1200lb-datasheet Description: POWER MOSFET
Packaging: Tube
Package / Case: 9-SMD Power Module
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 58A
Supplier Device Package: SMPD
Part Status: Active
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IXFP36N20X3M IXFP36N20X3M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n20x3m_datasheet.pdf.pdf Description: MOSFET N-CH 200V 36A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
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IXYH8N250CHV IXYH8N250CHV IXYS littelfuse_discrete_igbts_xpt_ixy_8n250chv_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
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IXTH1N170DHV IXTH1N170DHV IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1n170dhv_datasheet.pdf.pdf Description: MOSFET N-CH 1700V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
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N2543ZD240 IXYS Description: SCR 2.4KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 2.4 kV
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IXXX200N60B3 IXYS littelfuse_discrete_igbts_xpt_ixx_200n60b3_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 4.4mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
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IXYT85N120A4HV IXYT85N120A4HV IXYS Description: IGBT PT 1200V 300A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
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LSIC2SD120N120PA LSIC2SD120N120PA IXYS LSIC2SD120N120PA.PDF Description: DIODE MODULE SIC 1200V 120A
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A (DC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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DSEC29-02AS-TUB DSEC29-02AS-TUB IXYS DSEC29-02AS.pdf Description: DIODE ARRAY GP 200V 15A TO263
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CLB30I1200HB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLB30I1200HB.pdf Description: SCR 1.2KV 47A TO247
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IXGT6N170-TRL IXYS Description: IXGT6N170 TRL
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IXGT6N170AHV-TRL IXYS Description: IXGT6N170AHV TRL
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IXGT6N170A-TRL IXYS Description: IXGT6N170A TRL
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IXFA44N25X3 IXFA44N25X3 IXYS media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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IXFP44N25X3 IXFP44N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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IXTH44N25L2 IXYS media?resourcetype=datasheets&itemid=04e8b47d-2398-4a0b-bd4f-d92d25c9b38c&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_44n25l2_datasheet.pdf Description: MOSFET N-CH 250V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V
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R1158NC26P IXYS Description: SCR 2.6KV 2328A W11
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CLA100E1200TZ-TUB CLA100E1200TZ-TUB IXYS media?resourcetype=datasheets&itemid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4&filename=Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet Description: THYRISTOR SCR 1200V 100A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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IXGK120N60B3 IXYS media?resourcetype=datasheets&itemid=360c665e-d7b3-4ccb-ba05-1f3b3a839463&filename=littelfuse_discrete_igbts_pt_ixg_120n60b3_datasheet.pdf Description: DISC IGBT PT-MID FREQUENCY TO-26
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
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LSIC2SD120N80PA LSIC2SD120N80PA IXYS littelfuse_power_semiconductor_silicon_carbide_lsic2sd120n80pa_datasheet.pdf.pdf Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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IXTH36P15P DS99791D(IXTA-P-H-Q36P15P).pdf
IXTH36P15P
Hersteller: IXYS
Description: MOSFET P-CH 150V 36A TO247
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P0848YC06B media?resourcetype=datasheets&amp;itemid=b736798f-6ed6-493c-99be-c2f861cff4f6&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_p0848yc0___datasheet.pdf
Hersteller: IXYS
Description: SCR 600V 1713A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9625A @ 50Hz
Current - On State (It (AV)) (Max): 848 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 50 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1713 A
Voltage - Off State: 600 V
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IXYH40N120A4 littelfuse_discrete_igbts_xpt_ixyh40n120a4_datasheet.pdf.pdf
IXYH40N120A4
Hersteller: IXYS
Description: IGBT 1200V 40A GENX4 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
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IXYT40N120A4HV littelfuse_discrete_igbts_xpt_ixyt40n120a4hv_datasheet.pdf.pdf
IXYT40N120A4HV
Hersteller: IXYS
Description: IGBT PT 1200V 140A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
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IXG100IF1200HF
Hersteller: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
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N0465WN160
Hersteller: IXYS
Description: SCR 1.6KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.6 kV
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N3012ZC200 media?resourcetype=datasheets&amp;itemid=e2d6ba71-ef47-402a-9b6e-dd7e2f88e99d&amp;filename=littelfuse_discrete_thyristors_phase_control_n3012zc2_0_datasheet.pdf
Hersteller: IXYS
Description: SCR 2KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2 kV
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N3012ZC260 media?resourcetype=datasheets&amp;itemid=e2d6ba71-ef47-402a-9b6e-dd7e2f88e99d&amp;filename=littelfuse_discrete_thyristors_phase_control_n3012zc2_0_datasheet.pdf
Hersteller: IXYS
Description: SCR 2.6KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2.6 kV
Produkt ist nicht verfügbar
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IXFH220N06T3 littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_220n06t3_datasheet.pdf.pdf
IXFH220N06T3
Hersteller: IXYS
Description: MOSFET N-CH 60V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Produkt ist nicht verfügbar
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IXFD15N100-8X
Hersteller: IXYS
Description: MOSFET N-CH
Produkt ist nicht verfügbar
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IXFJ15N100Q
Hersteller: IXYS
Description: MOSFET N-CH TO-220
Produkt ist nicht verfügbar
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IXFR15N100Q
Hersteller: IXYS
Description: MOSFET N-CH ISOPLUS247
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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IXTP8N70X2M littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTP8N70X2M
Hersteller: IXYS
Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.34 EUR
50+3.76 EUR
100+3.42 EUR
500+2.81 EUR
1000+2.62 EUR
Mindestbestellmenge: 3
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W0642WC160
Hersteller: IXYS
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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IXBT2N250-TR
Hersteller: IXYS
Description: IGBT 2500V 5A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 920 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 30ns/70ns
Test Condition: 2000V, 2A, 47Ohm, 15V
Gate Charge: 10.6 nC
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 13 A
Power - Max: 32 W
Produkt ist nicht verfügbar
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MMIX4B22N300
MMIX4B22N300
Hersteller: IXYS
Description: IGBT TRANS 3000V 38A
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 22A
NTC Thermistor: No
Supplier Device Package: 24-SMPD
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 35 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+146.94 EUR
10+130.24 EUR
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IXIDM1401_1505_M IXIDM1401_M_12Sep2017_DS.pdf
Hersteller: IXYS
Description: POWER MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
Produkt ist nicht verfügbar
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IXIDM1403_1505_M IXIDM1403_1505_M_DS.pdf
Hersteller: IXYS
Description: POWER MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
Produkt ist nicht verfügbar
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IXIDM1401 IXIDM1401_PB.pdf
Hersteller: IXYS
Description: ISOLATED GATE DRIVER
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Discontinued at Digi-Key
Current: 10 A
Voltage: 15 V
Produkt ist nicht verfügbar
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IXIDM1401_1515_M IXIDM1401_M_12Sep2017_DS.pdf
Hersteller: IXYS
Description: DVR MOD +15V -15V 10A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
Produkt ist nicht verfügbar
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IXIDM1401_1515_O IXIDM1401_O_12Sep2017_DS.pdf
Hersteller: IXYS
Description: DVR MOD +15V -15V 10A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
Produkt ist nicht verfügbar
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IXIDM1403_1515_M IXIDM140(1,3)_Series_DS.pdf
Hersteller: IXYS
Description: DVR MOD +15V -15V 30A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
Produkt ist nicht verfügbar
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IXIDM1403_1515_O IXIDM140(1,3)_Series_DS.pdf
Hersteller: IXYS
Description: DVR MOD +15V -15V 30A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
Produkt ist nicht verfügbar
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W3842MC240
Hersteller: IXYS
Description: DIODE STANDARD 2400V 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2400 V
Produkt ist nicht verfügbar
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W3842MC280
Hersteller: IXYS
Description: DIODE STANDARD 2800V 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2800 V
Produkt ist nicht verfügbar
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IXXH40N65C4D1 littelfuse-discrete-igbts-ixxh40n65c4d1-datasheet?assetguid=ad9ee658-c83b-4415-9c5f-f037396e82d7
IXXH40N65C4D1
Hersteller: IXYS
Description: IGBT PT 650V 110A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/100ns
Switching Energy: 1.6mJ (on), 420µJ (off)
Test Condition: 400V, 40A, 5Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 215 A
Power - Max: 455 W
Produkt ist nicht verfügbar
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IXTC36P15P DS99792A(IXTC-IXTR36P15P).pdf
IXTC36P15P
Hersteller: IXYS
Description: MOSFET P-CH 150V 22A ISOPLUS220
Produkt ist nicht verfügbar
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DNA30EM2200PZ-TRL media?resourcetype=datasheets&itemid=edb000bc-d1eb-4949-b232-32b836a04121&filename=Littelfuse-Power-Semiconductors-DNA30EM2200PZ-Datasheet
DNA30EM2200PZ-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+4.00 EUR
Mindestbestellmenge: 800
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DNA30EM2200PZ-TRL media?resourcetype=datasheets&itemid=edb000bc-d1eb-4949-b232-32b836a04121&filename=Littelfuse-Power-Semiconductors-DNA30EM2200PZ-Datasheet
DNA30EM2200PZ-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
auf Bestellung 1151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.68 EUR
10+5.85 EUR
100+4.81 EUR
Mindestbestellmenge: 3
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DSEP29-12B
Hersteller: IXYS
Description: DIODE STANDARD 1200V 30A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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IXYP30N65C3 media?resourcetype=datasheets&amp;itemid=15441231-dbab-4158-976c-a30abffe6233&amp;filename=littelfuse_discrete_igbts_xpt_ixy_30n65c3_datasheet.pdf
IXYP30N65C3
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 118 A
Power - Max: 270 W
Produkt ist nicht verfügbar
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R1446NC12E
Hersteller: IXYS
Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+687.42 EUR
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R1446NC12D
Hersteller: IXYS
Description: SCR 1.2KV 2940A W11
Produkt ist nicht verfügbar
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R1446NC12C media?resourcetype=datasheets&itemid=95ee1977-9d63-4928-b1da-727c32c0a486&filename=littelfuse_discrete_thyristors_fast_thyristors_r1446nc12__datasheet.pdf
Hersteller: IXYS
Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+767.66 EUR
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IXYX110N120A4 IXYX110N120A4_DS.pdf
IXYX110N120A4
Hersteller: IXYS
Description: IGBT PT 1200V 375A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.08 EUR
30+30.57 EUR
120+29.39 EUR
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IXYK110N120A4
IXYK110N120A4
Hersteller: IXYS
Description: IGBT PT 1200V 375A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
Produkt ist nicht verfügbar
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IXYN110N120A4 IXYN110N120A4_DS.pdf
IXYN110N120A4
Hersteller: IXYS
Description: IGBT PT 1200V 275A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+62.22 EUR
10+46.30 EUR
100+41.65 EUR
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IXFA20N85XHV-TRL
IXFA20N85XHV-TRL
Hersteller: IXYS
Description: MOSFET N-CH 850V 20A TO263HV
Produkt ist nicht verfügbar
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IXFJ20N85X DS100772A(IXFJ20N85X).pdf
IXFJ20N85X
Hersteller: IXYS
Description: MOSFET N-CH 850V 9.5A ISO TO247
Produkt ist nicht verfügbar
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N6012ZD020 media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf
Hersteller: IXYS
Description: SCR 200V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 200 V
Produkt ist nicht verfügbar
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MCB40P1200LB-TUB media?resourcetype=datasheets&itemid=342f592b-5d45-4a74-859b-9516f656d799&filename=littelfuse-power-semiconductors-mcb40p1200lb-datasheet
Hersteller: IXYS
Description: POWER MOSFET
Packaging: Tube
Package / Case: 9-SMD Power Module
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 58A
Supplier Device Package: SMPD
Part Status: Active
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+399.85 EUR
10+382.96 EUR
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IXFP36N20X3M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfp36n20x3m_datasheet.pdf.pdf
IXFP36N20X3M
Hersteller: IXYS
Description: MOSFET N-CH 200V 36A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
Produkt ist nicht verfügbar
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IXYH8N250CHV littelfuse_discrete_igbts_xpt_ixy_8n250chv_datasheet.pdf.pdf
IXYH8N250CHV
Hersteller: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
Produkt ist nicht verfügbar
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IXTH1N170DHV littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1n170dhv_datasheet.pdf.pdf
IXTH1N170DHV
Hersteller: IXYS
Description: MOSFET N-CH 1700V 1A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.64 EUR
10+27.23 EUR
100+23.00 EUR
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N2543ZD240
Hersteller: IXYS
Description: SCR 2.4KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 2.4 kV
Produkt ist nicht verfügbar
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IXXX200N60B3 littelfuse_discrete_igbts_xpt_ixx_200n60b3_datasheet.pdf.pdf
Hersteller: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 4.4mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
Produkt ist nicht verfügbar
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IXYT85N120A4HV
IXYT85N120A4HV
Hersteller: IXYS
Description: IGBT PT 1200V 300A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
auf Bestellung 261 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.45 EUR
30+25.54 EUR
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LSIC2SD120N120PA LSIC2SD120N120PA.PDF
LSIC2SD120N120PA
Hersteller: IXYS
Description: DIODE MODULE SIC 1200V 120A
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A (DC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+177.99 EUR
10+151.07 EUR
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DSEC29-02AS-TUB DSEC29-02AS.pdf
DSEC29-02AS-TUB
Hersteller: IXYS
Description: DIODE ARRAY GP 200V 15A TO263
Produkt ist nicht verfügbar
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CLB30I1200HB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLB30I1200HB.pdf
Hersteller: IXYS
Description: SCR 1.2KV 47A TO247
Produkt ist nicht verfügbar
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IXGT6N170-TRL
Hersteller: IXYS
Description: IXGT6N170 TRL
Produkt ist nicht verfügbar
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IXGT6N170AHV-TRL
Hersteller: IXYS
Description: IXGT6N170AHV TRL
Produkt ist nicht verfügbar
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IXGT6N170A-TRL
Hersteller: IXYS
Description: IXGT6N170A TRL
Produkt ist nicht verfügbar
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IXFA44N25X3 media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf
IXFA44N25X3
Hersteller: IXYS
Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+6.44 EUR
Mindestbestellmenge: 300
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IXFP44N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf
IXFP44N25X3
Hersteller: IXYS
Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+7.69 EUR
Mindestbestellmenge: 300
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IXTH44N25L2 media?resourcetype=datasheets&itemid=04e8b47d-2398-4a0b-bd4f-d92d25c9b38c&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_44n25l2_datasheet.pdf
Hersteller: IXYS
Description: MOSFET N-CH 250V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V
Produkt ist nicht verfügbar
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R1158NC26P
Hersteller: IXYS
Description: SCR 2.6KV 2328A W11
Produkt ist nicht verfügbar
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CLA100E1200TZ-TUB media?resourcetype=datasheets&itemid=5ded1566-2d7d-4412-a055-f9a4f5f53ef4&filename=Littelfuse-Power-Semiconductors-CLA100E1200TZ-Datasheet
CLA100E1200TZ-TUB
Hersteller: IXYS
Description: THYRISTOR SCR 1200V 100A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.79 EUR
Mindestbestellmenge: 2
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IXGK120N60B3 media?resourcetype=datasheets&itemid=360c665e-d7b3-4ccb-ba05-1f3b3a839463&filename=littelfuse_discrete_igbts_pt_ixg_120n60b3_datasheet.pdf
Hersteller: IXYS
Description: DISC IGBT PT-MID FREQUENCY TO-26
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
Produkt ist nicht verfügbar
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LSIC2SD120N80PA littelfuse_power_semiconductor_silicon_carbide_lsic2sd120n80pa_datasheet.pdf.pdf
LSIC2SD120N80PA
Hersteller: IXYS
Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+133.74 EUR
10+106.61 EUR
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