IXYA20N120A4HV IXYS
Hersteller: IXYS
Description: IGBT PT 1200V 80A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 800mV, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
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Technische Details IXYA20N120A4HV IXYS
Description: IGBT PT 1200V 80A TO-263HV, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 54 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, Supplier Device Package: TO-263HV, IGBT Type: PT, Td (on/off) @ 25°C: 12ns/275ns, Switching Energy: 3.6mJ (on), 2.75mJ (off), Test Condition: 800mV, 20A, 10Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 135 A, Power - Max: 375 W.
Weitere Produktangebote IXYA20N120A4HV
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
IXYA20N120A4HV | IXYS |
IGBTs TO263 1200V 20A XPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IXYA20N120A4HV | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 80A; 375W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 80A Power dissipation: 375W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 135A Mounting: SMD Gate charge: 46nC Kind of package: tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXYA20N120A4HV |
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Hersteller: IXYS
IGBTs TO263 1200V 20A XPT
IGBTs TO263 1200V 20A XPT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYA20N120A4HV |
![]() |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 375W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 135A
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 80A; 375W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 80A
Power dissipation: 375W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 135A
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH



