auf Bestellung 3146 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 17.83 EUR |
| 10+ | 17.81 EUR |
| 50+ | 11.99 EUR |
| 100+ | 11.55 EUR |
| 250+ | 11.51 EUR |
| 500+ | 11.39 EUR |
| 1000+ | 10.54 EUR |
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Technische Details IXYA20N120A4HV IXYS
Description: DISC IGBT XPT-GENX4 TO-263D2, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 54 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A, Supplier Device Package: TO-263HV, IGBT Type: PT, Td (on/off) @ 25°C: 12ns/275ns, Switching Energy: 3.6mJ (on), 2.75mJ (off), Test Condition: 800mV, 20A, 10Ohm, 15V, Gate Charge: 46 nC, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 135 A, Power - Max: 375 W.
Weitere Produktangebote IXYA20N120A4HV
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXYA20N120A4HV | Hersteller : IXYS |
 Description: DISC IGBT XPT-GENX4 TO-263D2Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 54 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A Supplier Device Package: TO-263HV IGBT Type: PT Td (on/off) @ 25°C: 12ns/275ns Switching Energy: 3.6mJ (on), 2.75mJ (off) Test Condition: 800mV, 20A, 10Ohm, 15V Gate Charge: 46 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 135 A Power - Max: 375 W |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYA20N120A4HV | Hersteller : Littelfuse |
1200V IGBT Chip Transistor |
Produkt ist nicht verfügbar |