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DSEP12-12BZ-TUB DSEP12-12BZ-TUB IXYS media?resourcetype=datasheets&itemid=e6aa2de7-e5da-4c5f-8db0-895698af1fed&filename=littelfuse%2520power%2520semiconductors%2520dsep12-12bz%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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DSEP12-12AZ-TUB DSEP12-12AZ-TUB IXYS Littelfuse-Power-Semiconductors-DSEP12-12AZ-Datasheet?assetguid=012c4d94-42d0-46bd-b403-cba1fb09e8b0 Description: DIODE STANDARD 1200V 12A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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DSEI12-12AZ-TUB DSEI12-12AZ-TUB IXYS media?resourcetype=datasheets&itemid=3b99ded9-82dc-4699-ac8c-df4ed6bc2074&filename=littelfuse%2520power%2520semiconductors%2520dsei12-12az%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 11A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
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IXFA80N25X3TRL IXFA80N25X3TRL IXYS Description: MOSFET N-CH 250V 80A X3CLASS TO-
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DSEP40-03AS-TUB DSEP40-03AS-TUB IXYS media?resourcetype=datasheets&itemid=4c2d2dd8-9974-4f79-b86f-23a25c93ff5b&filename=littelfuse%2520power%2520semiconductors%2520dsep40-03as%2520datasheet.pdf Description: DIODE GEN PURP 300V 40A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 40 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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IXYH30N65B3D1 IXYS Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/87ns
Switching Energy: 830µJ (on), 640µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 270 W
Produkt ist nicht verfügbar
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DCG20B650LB-TRR IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Produkt ist nicht verfügbar
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IXG50I4500KN IXYS Description: DISC IGBT NPT-VERY HI VOLTAGE IS
Packaging: Tube
Package / Case: ISOPLUS264™
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
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CLA100E1200KB IXYS media?resourcetype=datasheets&itemid=a0930cdd-14b8-43a1-a3f0-53bfd2ca5b7c&filename=Littelfuse-Power-Semiconductors-CLA100E1200KB-Datasheet Description: SCR 1.2KV 160A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.37 V
Supplier Device Package: TO-264
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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IXYH30N120C4 IXYS littelfuse-discrete-igbts-ixyh30n120c4-datasheet?assetguid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932 Description: IGBT PT 1200V 94A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
Produkt ist nicht verfügbar
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CMA60MT1600NHR IXYS CMA60MT1600NHR.pdf Description: TRIAC 1.6KV 66A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 66 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IXYA20N120A4HV IXYA20N120A4HV IXYS littelfuse-discrete-igbts-ixy-20n120a4-datasheet?assetguid=b40a9e42-70b2-4715-a4d2-5a93d0449e25 Description: IGBT PT 1200V 80A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 800mV, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXTA20N65X2 IXTA20N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Produkt ist nicht verfügbar
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DSP25-16AT-TRL IXYS media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet Description: DIODE ARRAY GP 1600V 25A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 25 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Produkt ist nicht verfügbar
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CME30E1600PZ-TUB CME30E1600PZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCME30E1600PZ.pdf Description: SCR 1.6KV 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 90 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.92 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CMA80MT1600NHR IXYS media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet Description: TRIAC 1.6KV 88A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IXTA20N65X-TRL IXTA20N65X-TRL IXYS Description: MOSFET N-CH 650V 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Produkt ist nicht verfügbar
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IXGP48N60B3 IXGP48N60B3 IXYS media?resourcetype=datasheets&itemid=c729dd1f-0072-44a5-be34-749c6234f065&filename=littelfuse_discrete_igbts_pt_ixg_48n60b3_datasheet.pdf Description: IGBT PT 600V 48A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXXH75N60B3 IXXH75N60B3 IXYS littelfuse-discrete-igbts-ixxh75n60b3-datasheet?assetguid=65b0869f-7d80-4345-86e6-e47e8d0b05bf Description: IGBT PT 600V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
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IXGT64N60B3 IXYS media?resourcetype=datasheets&itemid=2327aeab-d06f-45ab-8c72-805732caec63&filename=littelfuse_discrete_igbts_pt_ixg_64n60b3_datasheet.pdf Description: IGBT PT 600V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
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MITA300RF1700PTED IXYS media?resourcetype=datasheets&amp;itemid=202c2010-df96-46c8-b404-30369d66b0f0&amp;filename=mita300rf1700pted.pdf Description: IGBT MODULE - OTHERS E2-PACK-PFP
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1390 W
Current - Collector Cutoff (Max): 1.2 mA
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IXFA34N65X2-TRL IXFA34N65X2-TRL IXYS Description: MOSFET N-CH 650V 34A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
Produkt ist nicht verfügbar
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DSSK18-0025BS-TUB DSSK18-0025BS-TUB IXYS Description: POWER DIODE DISCRETES-SCHOTTKY T
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 mA @ 25 V
Produkt ist nicht verfügbar
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IXGP48N60A3 IXGP48N60A3 IXYS Description: IGBT PT 600V 120A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
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IXGT64N60B3-TRL IXYS Description: IGBT PT 600V 64A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
Produkt ist nicht verfügbar
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IXTA120P065T-TRL IXTA120P065T-TRL IXYS Description: MOSFET P-CH 65V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 60A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Produkt ist nicht verfügbar
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IXYP20N65B3D1 IXYP20N65B3D1 IXYS littelfuse-discrete-igbts-ixyp20n65b3d1-datasheet?assetguid=78b3e9dc-6946-4b8d-a2c0-eb8b9168de3b Description: IGBT PT 650V 58A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
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CLA40E1200HR CLA40E1200HR IXYS CLA40E1200HR.pdf Description: SCR 1.2KV 63A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700A
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.25 V
Supplier Device Package: ISO247
Part Status: Active
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 1.2 kV
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MIXG240RF1200PTED IXYS Description: IGBT MODULE - BRAKE E2-PACK-PFP
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: PT
Current - Collector (Ic) (Max): 335 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 200 µA
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CLA40E1200NPZ-TRL CLA40E1200NPZ-TRL IXYS Description: POWER THYRISTOR DISCRETES-SCR TO
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DCG20B650LB-TUB IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
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IXYA50N65C3-TRL IXYA50N65C3-TRL IXYS Description: IXYA50N65C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 470µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
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DSEI12-06AS-TRL DSEI12-06AS-TRL IXYS media?resourcetype=datasheets&itemid=362654c6-09c3-4831-b506-bb98d7950ba6&filename=littelfuse%2520power%2520semiconductors%2520dsei12-06as%2520datasheet.pdf Description: DIODE GEN PURP 600V 14A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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IXGA20N120A3-TRL IXGA20N120A3-TRL IXYS Description: IGBT PT 1200V 40A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
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CLA100E1200HB CLA100E1200HB IXYS Littelfuse-Power-Semiconductors-CLA100E1200HB-Datasheet?assetguid=b7e0eaa6-3220-4f0d-8e86-1f7cf4d2a417 Description: SCR 1.2KV 160A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.37 V
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
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MCMA140PD1600T-NMI IXYS Description: SCR MODULE
Packaging: Box
Part Status: Discontinued at Digi-Key
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MMIX1T660N04T4 IXYS media?resourcetype=datasheets&itemid=30f1d503-ac26-4011-9abc-ad3d4c6bca0f&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1t660n04t4_datasheet.pdf Description: MOSFET N-CH 40V 660A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
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DSEP12-12BZ-TRL DSEP12-12BZ-TRL IXYS media?resourcetype=datasheets&itemid=e6aa2de7-e5da-4c5f-8db0-895698af1fed&filename=littelfuse%2520power%2520semiconductors%2520dsep12-12bz%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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ZY200R460 IXYS littelfuse_power_semiconductors_product_catalog.pdf.pdf Description: ZY200R460
Packaging: Bulk
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MCC162-16IO1B MCC162-16IO1B IXYS Description: SCR MODULE 1.6KV 300A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 181 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
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IXYH30N120A4 IXYS littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4 Description: IGBT PT 1200V 106A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
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IXTA3N150HV-TRL IXTA3N150HV-TRL IXYS Description: MOSFET N-CH 1500V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
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DSS6-015AS-TUB DSS6-015AS-TUB IXYS power-semiconductor-discrete-diode-dss6-015as-datasheet?assetguid=9fa9b1be-581a-4a56-aa6c-08ff396a8d0d Description: DIODE SCHOTTKY 150V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 24V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
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DPF30P600HR IXYS Description: POWER DIODE DISCRETES-FRED ISOPL
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CMA80MT1600NHB IXYS media?resourcetype=datasheets&itemid=88b5d86b-2d59-46c7-ae3b-105c0b411650&filename=littelfuse-power-semiconductors-cma80mt1600nhb-datasheet Description: TRIAC 1.6KV 88A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.6 kV
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IXYA15N65C3D1 IXYA15N65C3D1 IXYS littelfuse-discrete-igbts-ixy-15n65c3d1-datasheet?assetguid=826cf8c2-e29d-42d1-8a6c-1cda01989fba Description: IGBT PT 650V 38A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 20 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
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CMA60MT1600NHB IXYS CMA60MT1600NHB.pdf Description: TRIAC 1.6KV 66A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 66 A
Voltage - Off State: 1.6 kV
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IXYA20N65C3-TRL IXYA20N65C3-TRL IXYS Description: IGBT PT 650V 50A TO-263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
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DSP25-12AT-TRL IXYS media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet Description: DIODE ARRAY GP 1200V 25A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 25 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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IXYH75N65C3D1 IXYS littelfuse-discrete-igbts-ixyh75n65c3d1-datasheet?assetguid=e482644e-6708-4d09-a039-b186b036a918 Description: IGBT PT 650V 175A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
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DMA10IM1200UZ-TRL IXYS media?resourcetype=datasheets&itemid=6d9650e4-19ad-4143-8715-b01694239eeb&filename=Littelfuse-Power-Semiconductors-DMA10IM1200UZ-Datasheet Description: DIODE GEN PURP 1.2KV 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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CLA40E1200NPZ-TUB CLA40E1200NPZ-TUB IXYS Description: POWER THYRISTOR DISCRETES-SCR TO
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CLA60MT1200NHR IXYS Description: POWER THYRISTOR DISC-TRIAC ISOPL
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CMA30E1600PZ-TRL CMA30E1600PZ-TRL IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA30E1600PZ.pdf Description: SCR 1.6KV 47A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.42 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.6 kV
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IXFT88N30P-TRL IXYS Description: MOSFET N-CH 300V 88A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
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CLA40MT1200NHR IXYS Description: POWER THYRISTOR DISC-TRIAC ISOPL
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IXYN120N65C3D1 IXYN120N65C3D1 IXYS littelfuse-discrete-igbts-ixyn120n65c3d1-datasheet?assetguid=33e46005-0359-40c2-85c0-3100c2cc40b5 Description: IGBT PT 650V 190A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Current - Collector (Ic) (Max): 190 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 830 W
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IXGR72N60C3 IXYS littelfuse_discrete_igbts_pt_ixgr72n60c3_datasheet?assetguid=0b3ed143-b30e-472f-91dd-5831628de1dd Description: IGBT PT 600V 80A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/77ns
Switching Energy: 1.03mJ (on), 480µJ (off)
Test Condition: 480V, 50A, 2Ohm, 15V
Gate Charge: 175 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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IXXH110N65B4 IXXH110N65B4 IXYS littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f Description: IGBT PT 650V 250A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/146ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 570 A
Power - Max: 880 W
Produkt ist nicht verfügbar
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IXYH20N65C3D1 IXYS Description: IGBT PT 650V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
Produkt ist nicht verfügbar
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DSEP12-12BZ-TUB media?resourcetype=datasheets&itemid=e6aa2de7-e5da-4c5f-8db0-895698af1fed&filename=littelfuse%2520power%2520semiconductors%2520dsep12-12bz%2520datasheet.pdf
DSEP12-12BZ-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.21 EUR
50+3.43 EUR
Mindestbestellmenge: 3
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DSEP12-12AZ-TUB Littelfuse-Power-Semiconductors-DSEP12-12AZ-Datasheet?assetguid=012c4d94-42d0-46bd-b403-cba1fb09e8b0
DSEP12-12AZ-TUB
Hersteller: IXYS
Description: DIODE STANDARD 1200V 12A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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DSEI12-12AZ-TUB media?resourcetype=datasheets&itemid=3b99ded9-82dc-4699-ac8c-df4ed6bc2074&filename=littelfuse%2520power%2520semiconductors%2520dsei12-12az%2520datasheet.pdf
DSEI12-12AZ-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 11A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
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IXFA80N25X3TRL
IXFA80N25X3TRL
Hersteller: IXYS
Description: MOSFET N-CH 250V 80A X3CLASS TO-
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
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DSEP40-03AS-TUB media?resourcetype=datasheets&itemid=4c2d2dd8-9974-4f79-b86f-23a25c93ff5b&filename=littelfuse%2520power%2520semiconductors%2520dsep40-03as%2520datasheet.pdf
DSEP40-03AS-TUB
Hersteller: IXYS
Description: DIODE GEN PURP 300V 40A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 40 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Produkt ist nicht verfügbar
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IXYH30N65B3D1
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/87ns
Switching Energy: 830µJ (on), 640µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 270 W
Produkt ist nicht verfügbar
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DCG20B650LB-TRR
Hersteller: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Produkt ist nicht verfügbar
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IXG50I4500KN
Hersteller: IXYS
Description: DISC IGBT NPT-VERY HI VOLTAGE IS
Packaging: Tube
Package / Case: ISOPLUS264™
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Produkt ist nicht verfügbar
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CLA100E1200KB media?resourcetype=datasheets&itemid=a0930cdd-14b8-43a1-a3f0-53bfd2ca5b7c&filename=Littelfuse-Power-Semiconductors-CLA100E1200KB-Datasheet
Hersteller: IXYS
Description: SCR 1.2KV 160A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.37 V
Supplier Device Package: TO-264
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
Produkt ist nicht verfügbar
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IXYH30N120C4 littelfuse-discrete-igbts-ixyh30n120c4-datasheet?assetguid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932
Hersteller: IXYS
Description: IGBT PT 1200V 94A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
Produkt ist nicht verfügbar
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CMA60MT1600NHR CMA60MT1600NHR.pdf
Hersteller: IXYS
Description: TRIAC 1.6KV 66A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 66 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IXYA20N120A4HV littelfuse-discrete-igbts-ixy-20n120a4-datasheet?assetguid=b40a9e42-70b2-4715-a4d2-5a93d0449e25
IXYA20N120A4HV
Hersteller: IXYS
Description: IGBT PT 1200V 80A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 800mV, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
Produkt ist nicht verfügbar
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IXTA20N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf
IXTA20N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Produkt ist nicht verfügbar
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DSP25-16AT-TRL media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet
Hersteller: IXYS
Description: DIODE ARRAY GP 1600V 25A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 25 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
Produkt ist nicht verfügbar
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CME30E1600PZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCME30E1600PZ.pdf
CME30E1600PZ-TUB
Hersteller: IXYS
Description: SCR 1.6KV 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 90 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.92 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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CMA80MT1600NHR media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet
Hersteller: IXYS
Description: TRIAC 1.6KV 88A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IXTA20N65X-TRL
IXTA20N65X-TRL
Hersteller: IXYS
Description: MOSFET N-CH 650V 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
Produkt ist nicht verfügbar
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IXGP48N60B3 media?resourcetype=datasheets&itemid=c729dd1f-0072-44a5-be34-749c6234f065&filename=littelfuse_discrete_igbts_pt_ixg_48n60b3_datasheet.pdf
IXGP48N60B3
Hersteller: IXYS
Description: IGBT PT 600V 48A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
Produkt ist nicht verfügbar
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IXXH75N60B3 littelfuse-discrete-igbts-ixxh75n60b3-datasheet?assetguid=65b0869f-7d80-4345-86e6-e47e8d0b05bf
IXXH75N60B3
Hersteller: IXYS
Description: IGBT PT 600V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
Produkt ist nicht verfügbar
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IXGT64N60B3 media?resourcetype=datasheets&itemid=2327aeab-d06f-45ab-8c72-805732caec63&filename=littelfuse_discrete_igbts_pt_ixg_64n60b3_datasheet.pdf
Hersteller: IXYS
Description: IGBT PT 600V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
Produkt ist nicht verfügbar
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MITA300RF1700PTED media?resourcetype=datasheets&amp;itemid=202c2010-df96-46c8-b404-30369d66b0f0&amp;filename=mita300rf1700pted.pdf
Hersteller: IXYS
Description: IGBT MODULE - OTHERS E2-PACK-PFP
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: Trench
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1390 W
Current - Collector Cutoff (Max): 1.2 mA
Produkt ist nicht verfügbar
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IXFA34N65X2-TRL
IXFA34N65X2-TRL
Hersteller: IXYS
Description: MOSFET N-CH 650V 34A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
Produkt ist nicht verfügbar
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DSSK18-0025BS-TUB
DSSK18-0025BS-TUB
Hersteller: IXYS
Description: POWER DIODE DISCRETES-SCHOTTKY T
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 mA @ 25 V
Produkt ist nicht verfügbar
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IXGP48N60A3
IXGP48N60A3
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
auf Bestellung 293 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.64 EUR
50+4.54 EUR
100+4.14 EUR
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IXGT64N60B3-TRL
Hersteller: IXYS
Description: IGBT PT 600V 64A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: TO-268
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/138ns
Switching Energy: 1.5mJ (on), 1mJ (off)
Test Condition: 480V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
Produkt ist nicht verfügbar
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IXTA120P065T-TRL
IXTA120P065T-TRL
Hersteller: IXYS
Description: MOSFET P-CH 65V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 60A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 25 V
Produkt ist nicht verfügbar
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IXYP20N65B3D1 littelfuse-discrete-igbts-ixyp20n65b3d1-datasheet?assetguid=78b3e9dc-6946-4b8d-a2c0-eb8b9168de3b
IXYP20N65B3D1
Hersteller: IXYS
Description: IGBT PT 650V 58A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
Produkt ist nicht verfügbar
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CLA40E1200HR CLA40E1200HR.pdf
CLA40E1200HR
Hersteller: IXYS
Description: SCR 1.2KV 63A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 650A, 700A
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.25 V
Supplier Device Package: ISO247
Part Status: Active
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 1.2 kV
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.57 EUR
10+17.68 EUR
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MIXG240RF1200PTED
Hersteller: IXYS
Description: IGBT MODULE - BRAKE E2-PACK-PFP
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: PT
Current - Collector (Ic) (Max): 335 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1250 W
Current - Collector Cutoff (Max): 200 µA
Produkt ist nicht verfügbar
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CLA40E1200NPZ-TRL
CLA40E1200NPZ-TRL
Hersteller: IXYS
Description: POWER THYRISTOR DISCRETES-SCR TO
Produkt ist nicht verfügbar
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DCG20B650LB-TUB
Hersteller: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Produkt ist nicht verfügbar
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IXYA50N65C3-TRL
IXYA50N65C3-TRL
Hersteller: IXYS
Description: IXYA50N65C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 470µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
Produkt ist nicht verfügbar
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DSEI12-06AS-TRL media?resourcetype=datasheets&itemid=362654c6-09c3-4831-b506-bb98d7950ba6&filename=littelfuse%2520power%2520semiconductors%2520dsei12-06as%2520datasheet.pdf
DSEI12-06AS-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 600V 14A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
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IXGA20N120A3-TRL
IXGA20N120A3-TRL
Hersteller: IXYS
Description: IGBT PT 1200V 40A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/290ns
Switching Energy: 2.85mJ (on), 6.47mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 50 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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CLA100E1200HB Littelfuse-Power-Semiconductors-CLA100E1200HB-Datasheet?assetguid=b7e0eaa6-3220-4f0d-8e86-1f7cf4d2a417
CLA100E1200HB
Hersteller: IXYS
Description: SCR 1.2KV 160A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.37 V
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
auf Bestellung 262 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.47 EUR
30+8.47 EUR
120+7.16 EUR
Mindestbestellmenge: 2
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MCMA140PD1600T-NMI
Hersteller: IXYS
Description: SCR MODULE
Packaging: Box
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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MMIX1T660N04T4 media?resourcetype=datasheets&itemid=30f1d503-ac26-4011-9abc-ad3d4c6bca0f&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1t660n04t4_datasheet.pdf
Hersteller: IXYS
Description: MOSFET N-CH 40V 660A 24SMPD
Packaging: Tube
Package / Case: 24-PowerSMD, 21 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 100A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 24-SMPD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 860 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 44000 pF @ 25 V
Produkt ist nicht verfügbar
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DSEP12-12BZ-TRL media?resourcetype=datasheets&itemid=e6aa2de7-e5da-4c5f-8db0-895698af1fed&filename=littelfuse%2520power%2520semiconductors%2520dsep12-12bz%2520datasheet.pdf
DSEP12-12BZ-TRL
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
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ZY200R460 littelfuse_power_semiconductors_product_catalog.pdf.pdf
Hersteller: IXYS
Description: ZY200R460
Packaging: Bulk
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+4.06 EUR
Mindestbestellmenge: 250
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MCC162-16IO1B
MCC162-16IO1B
Hersteller: IXYS
Description: SCR MODULE 1.6KV 300A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 181 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IXYH30N120A4 littelfuse-discrete-igbts-ixy-30n120a4-datasheet?assetguid=9fce9f90-2af9-4a75-bf7f-be975fe328f4
Hersteller: IXYS
Description: IGBT PT 1200V 106A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
Produkt ist nicht verfügbar
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IXTA3N150HV-TRL
IXTA3N150HV-TRL
Hersteller: IXYS
Description: MOSFET N-CH 1500V 3A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Produkt ist nicht verfügbar
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DSS6-015AS-TUB power-semiconductor-discrete-diode-dss6-015as-datasheet?assetguid=9fa9b1be-581a-4a56-aa6c-08ff396a8d0d
DSS6-015AS-TUB
Hersteller: IXYS
Description: DIODE SCHOTTKY 150V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 82pF @ 24V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 6 A
Current - Reverse Leakage @ Vr: 250 µA @ 150 V
Produkt ist nicht verfügbar
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DPF30P600HR
Hersteller: IXYS
Description: POWER DIODE DISCRETES-FRED ISOPL
Produkt ist nicht verfügbar
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CMA80MT1600NHB media?resourcetype=datasheets&itemid=88b5d86b-2d59-46c7-ae3b-105c0b411650&filename=littelfuse-power-semiconductors-cma80mt1600nhb-datasheet
Hersteller: IXYS
Description: TRIAC 1.6KV 88A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IXYA15N65C3D1 littelfuse-discrete-igbts-ixy-15n65c3d1-datasheet?assetguid=826cf8c2-e29d-42d1-8a6c-1cda01989fba
IXYA15N65C3D1
Hersteller: IXYS
Description: IGBT PT 650V 38A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 20 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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CMA60MT1600NHB CMA60MT1600NHB.pdf
Hersteller: IXYS
Description: TRIAC 1.6KV 66A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 60 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-247 (IXTH)
Current - On State (It (RMS)) (Max): 66 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
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IXYA20N65C3-TRL
IXYA20N65C3-TRL
Hersteller: IXYS
Description: IGBT PT 650V 50A TO-263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
Produkt ist nicht verfügbar
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DSP25-12AT-TRL media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet
Hersteller: IXYS
Description: DIODE ARRAY GP 1200V 25A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 25 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Produkt ist nicht verfügbar
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IXYH75N65C3D1 littelfuse-discrete-igbts-ixyh75n65c3d1-datasheet?assetguid=e482644e-6708-4d09-a039-b186b036a918
Hersteller: IXYS
Description: IGBT PT 650V 175A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
Produkt ist nicht verfügbar
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DMA10IM1200UZ-TRL media?resourcetype=datasheets&itemid=6d9650e4-19ad-4143-8715-b01694239eeb&filename=Littelfuse-Power-Semiconductors-DMA10IM1200UZ-Datasheet
Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
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CLA40E1200NPZ-TUB
CLA40E1200NPZ-TUB
Hersteller: IXYS
Description: POWER THYRISTOR DISCRETES-SCR TO
Produkt ist nicht verfügbar
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CLA60MT1200NHR
Hersteller: IXYS
Description: POWER THYRISTOR DISC-TRIAC ISOPL
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CMA30E1600PZ-TRL Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA30E1600PZ.pdf
CMA30E1600PZ-TRL
Hersteller: IXYS
Description: SCR 1.6KV 47A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.42 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.6 kV
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IXFT88N30P-TRL
Hersteller: IXYS
Description: MOSFET N-CH 300V 88A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
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CLA40MT1200NHR
Hersteller: IXYS
Description: POWER THYRISTOR DISC-TRIAC ISOPL
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IXYN120N65C3D1 littelfuse-discrete-igbts-ixyn120n65c3d1-datasheet?assetguid=33e46005-0359-40c2-85c0-3100c2cc40b5
IXYN120N65C3D1
Hersteller: IXYS
Description: IGBT PT 650V 190A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Current - Collector (Ic) (Max): 190 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 830 W
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IXGR72N60C3 littelfuse_discrete_igbts_pt_ixgr72n60c3_datasheet?assetguid=0b3ed143-b30e-472f-91dd-5831628de1dd
Hersteller: IXYS
Description: IGBT PT 600V 80A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/77ns
Switching Energy: 1.03mJ (on), 480µJ (off)
Test Condition: 480V, 50A, 2Ohm, 15V
Gate Charge: 175 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 200 W
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IXXH110N65B4 littelfuse-discrete-igbts-ixxh110n65b4-datasheet?assetguid=1f9d7352-2fe8-4b5a-ba91-1f682cb30e6f
IXXH110N65B4
Hersteller: IXYS
Description: IGBT PT 650V 250A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/146ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 570 A
Power - Max: 880 W
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IXYH20N65C3D1
Hersteller: IXYS
Description: IGBT PT 650V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
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