IXBT42N300HV IXYS
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 42A
Pulsed collector current: 400A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 500W
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 42A
Pulsed collector current: 400A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 500W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 61.46 EUR |
30+ | 59.1 EUR |
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Technische Details IXBT42N300HV IXYS
Description: IGBT 3000V 104A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 1.7 µs, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A, Supplier Device Package: TO-268HV (IXBT), Td (on/off) @ 25°C: 72ns/445ns, Test Condition: 1500V, 42A, 20Ohm, 15V, Gate Charge: 200 nC, Current - Collector (Ic) (Max): 104 A, Voltage - Collector Emitter Breakdown (Max): 3000 V, Current - Collector Pulsed (Icm): 400 A, Power - Max: 500 W.
Weitere Produktangebote IXBT42N300HV nach Preis ab 61.46 EUR bis 88.39 EUR
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IXBT42N300HV | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV Mounting: SMD Case: TO268HV Collector-emitter voltage: 3kV Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 200nC Technology: BiMOSFET™ Collector current: 42A Pulsed collector current: 400A Turn-on time: 652ns Turn-off time: 950ns Type of transistor: IGBT Gate-emitter voltage: ±20V Power dissipation: 500W |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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IXBT42N300HV | Hersteller : IXYS | IGBT Transistors IGBT BIMSFT-VERYHIVOLT |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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IXBT42N300HV | Hersteller : IXYS |
Description: IGBT 3000V 104A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 1.7 µs Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A Supplier Device Package: TO-268HV (IXBT) Td (on/off) @ 25°C: 72ns/445ns Test Condition: 1500V, 42A, 20Ohm, 15V Gate Charge: 200 nC Current - Collector (Ic) (Max): 104 A Voltage - Collector Emitter Breakdown (Max): 3000 V Current - Collector Pulsed (Icm): 400 A Power - Max: 500 W |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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