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IXBT42N300HV

IXBT42N300HV IXYS


IXBH(T)42N300HV.pdf Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 42A
Pulsed collector current: 400A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 500W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+62.39 EUR
30+ 59.99 EUR
Mindestbestellmenge: 2
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Technische Details IXBT42N300HV IXYS

Description: IGBT 3000V 104A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 1.7 µs, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A, Supplier Device Package: TO-268HV (IXBT), Td (on/off) @ 25°C: 72ns/445ns, Test Condition: 1500V, 42A, 20Ohm, 15V, Gate Charge: 200 nC, Current - Collector (Ic) (Max): 104 A, Voltage - Collector Emitter Breakdown (Max): 3000 V, Current - Collector Pulsed (Icm): 400 A, Power - Max: 500 W.

Weitere Produktangebote IXBT42N300HV nach Preis ab 62.39 EUR bis 87.81 EUR

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IXBT42N300HV IXBT42N300HV Hersteller : IXYS IXBH(T)42N300HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 42A; 500W; TO268HV
Mounting: SMD
Case: TO268HV
Collector-emitter voltage: 3kV
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 200nC
Technology: BiMOSFET™
Collector current: 42A
Pulsed collector current: 400A
Turn-on time: 652ns
Turn-off time: 950ns
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Power dissipation: 500W
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+62.39 EUR
Mindestbestellmenge: 2
IXBT42N300HV IXBT42N300HV Hersteller : IXYS littelfuse_discrete_igbts_bimosfet_ixb_42n300hv_datasheet.pdf.pdf Description: IGBT 3000V 104A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
Supplier Device Package: TO-268HV (IXBT)
Td (on/off) @ 25°C: 72ns/445ns
Test Condition: 1500V, 42A, 20Ohm, 15V
Gate Charge: 200 nC
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 500 W
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+87.16 EUR
30+ 76.59 EUR
120+ 71.31 EUR
IXBT42N300HV IXBT42N300HV Hersteller : IXYS media-3319202.pdf IGBT Transistors IGBT BIMSFT-VERYHIVOLT
auf Bestellung 2137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+87.81 EUR
10+ 83.35 EUR
30+ 77.16 EUR
60+ 75.66 EUR
120+ 71.83 EUR
270+ 70.35 EUR
510+ 69.47 EUR