Technische Details IXGT6N170AHV IXYS
Category: SMD IGBT transistors, Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268HV, Case: TO268HV, Mounting: SMD, Kind of package: tube, Gate charge: 18.5nC, Turn-on time: 91ns, Turn-off time: 271ns, Power dissipation: 75W, Collector current: 3A, Pulsed collector current: 14A, Gate-emitter voltage: ±20V, Collector-emitter voltage: 1.7kV, Technology: NPT, Features of semiconductor devices: high voltage, Type of transistor: IGBT.
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IXGT6N170AHV | Hersteller : IXYS |
 IGBT Transistors IGBT NPT-HI VOLTAGE |
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IXGT6N170AHV | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; NPT; 1.7kV; 3A; 75W; TO268HV Case: TO268HV Mounting: SMD Kind of package: tube Gate charge: 18.5nC Turn-on time: 91ns Turn-off time: 271ns Power dissipation: 75W Collector current: 3A Pulsed collector current: 14A Gate-emitter voltage: ±20V Collector-emitter voltage: 1.7kV Technology: NPT Features of semiconductor devices: high voltage Type of transistor: IGBT |
Produkt ist nicht verfügbar |