IXFN40N110Q3 IXYS
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 35A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.26Ω
Kind of channel: enhancement
Reverse recovery time: 434ns
Pulsed drain current: 100A
Type of semiconductor module: MOSFET transistor
Gate charge: 300nC
Technology: HiPerFET™; Q3-Class
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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Technische Details IXFN40N110Q3 IXYS
Description: MOSFET N-CH 1100V 35A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 8mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1100 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V.
Weitere Produktangebote IXFN40N110Q3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFN40N110Q3 | IXYS |
Description: MOSFET N-CH 1100V 35A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1100 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXFN40N110Q3 | IXYS |
MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFN40N110Q3 |
|
Hersteller: IXYS
Description: MOSFET N-CH 1100V 35A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Description: MOSFET N-CH 1100V 35A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 20A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXFN40N110Q3 |
|
Hersteller: IXYS
MOSFET
MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH