IXFP12N65X2M Littelfuse Inc.

Description: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
auf Bestellung 277 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 8.34 EUR |
50+ | 4.34 EUR |
100+ | 3.96 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFP12N65X2M Littelfuse Inc.
Description: MOSFET N-CH 650V 12A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Isolated Tab, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V.
Weitere Produktangebote IXFP12N65X2M
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
IXFP12N65X2M | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
IXFP12N65X2M | Hersteller : Littelfuse |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
IXFP12N65X2M | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 155ns Gate charge: 18.5nC Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
|
![]() |
IXFP12N65X2M | Hersteller : IXYS |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
IXFP12N65X2M | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 40W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 155ns Gate charge: 18.5nC |
Produkt ist nicht verfügbar |