Produktrezensionen
Produktbewertung abgeben
Technische Details IXFY30N25X3 IXYS
Description: MOSFET N-CH 250V 30A TO252AA, Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4.5V @ 500µA, Power Dissipation (Max): 176W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Weitere Produktangebote IXFY30N25X3 nach Preis ab 6.06 EUR bis 14.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFY30N25X3 | IXYS |
 Description: MOSFET N-CH 250V 30A TO252AATechnology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4.5V @ 500µA Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
auf Bestellung 6203 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXFY30N25X3 |
|
Hersteller: IXYS
Description: MOSFET N-CH 250V 30A TO252AA
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 250V 30A TO252AA
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
auf Bestellung 6203 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.22 EUR |
| 70+ | 7.39 EUR |
| 140+ | 6.81 EUR |
| 560+ | 6.06 EUR |