IXBT14N300HV IXYS
Hersteller: IXYS
Description: IGBT 3000V 38A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.4 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A
Supplier Device Package: TO-268HV (IXBT)
Test Condition: 960V, 14A, 20Ohm, 15V
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 200 W
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Technische Details IXBT14N300HV IXYS
Description: IGBT 3000V 38A TO-268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 1.4 µs, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 14A, Supplier Device Package: TO-268HV (IXBT), Test Condition: 960V, 14A, 20Ohm, 15V, Gate Charge: 62 nC, Part Status: Active, Current - Collector (Ic) (Max): 38 A, Voltage - Collector Emitter Breakdown (Max): 3000 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 200 W.
Weitere Produktangebote IXBT14N300HV
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXBT14N300HV | Hersteller : IXYS |
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| IXBT14N300HV | Hersteller : IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 3kV; 38A; 200W; TO268HV Mounting: SMD Type of transistor: IGBT Case: TO268HV Gate charge: 62nC Gate-emitter voltage: ±20V Collector current: 38A Pulsed collector current: 120A Power dissipation: 200W Collector-emitter voltage: 3kV Kind of package: tube |
Produkt ist nicht verfügbar |
