Technische Details ITF48IF1200HR Littelfuse
Description: IGBT TRENCH 1200V 72A ISO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A, Supplier Device Package: ISO247, IGBT Type: Trench, Td (on/off) @ 25°C: 26ns/350ns, Switching Energy: 3mJ (on), 2.4mJ (off), Test Condition: 600V, 40A, 12Ohm, 15V, Gate Charge: 175 nC, Part Status: Active, Current - Collector (Ic) (Max): 72 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 390 W.
Weitere Produktangebote ITF48IF1200HR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
ITF48IF1200HR | Hersteller : IXYS |
![]() Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™ Collector current: 48A Case: ISO247™ Technology: Trench; XPT™ Power dissipation: 390W Kind of package: tube Gate charge: 175nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 160A Turn-on time: 52ns Turn-off time: 460ns Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
![]() |
ITF48IF1200HR | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: ISO247 IGBT Type: Trench Td (on/off) @ 25°C: 26ns/350ns Switching Energy: 3mJ (on), 2.4mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 175 nC Part Status: Active Current - Collector (Ic) (Max): 72 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 390 W |
Produkt ist nicht verfügbar |
|
![]() |
ITF48IF1200HR | Hersteller : IXYS |
![]() |
Produkt ist nicht verfügbar |
|
![]() |
ITF48IF1200HR | Hersteller : IXYS |
![]() Description: Transistor: IGBT; Trench; 1.2kV; 48A; 390W; ISO247™ Collector current: 48A Case: ISO247™ Technology: Trench; XPT™ Power dissipation: 390W Kind of package: tube Gate charge: 175nC Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Pulsed collector current: 160A Turn-on time: 52ns Turn-off time: 460ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |