Produktrezensionen
Produktbewertung abgeben
Technische Details IXTN240N075L2 IXYS
Description: MOSFET N-CH 75V 225A SOT227B, Power Dissipation (Max): 735W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V, Current - Continuous Drain (Id) @ 25°C: 225A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V, Drain to Source Voltage (Vdss): 75 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-227B, Vgs(th) (Max) @ Id: 4.5V @ 3mA.
Weitere Produktangebote IXTN240N075L2 nach Preis ab 76.58 EUR bis 110.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXTN240N075L2 | IXYS |
 Description: MOSFET N-CH 75V 225A SOT227BPower Dissipation (Max): 735W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V Current - Continuous Drain (Id) @ 25°C: 225A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-227B Vgs(th) (Max) @ Id: 4.5V @ 3mA |
auf Bestellung 556 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXTN240N075L2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 75V 225A SOT227B
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Description: MOSFET N-CH 75V 225A SOT227B
Power Dissipation (Max): 735W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 120A, 10V
Current - Continuous Drain (Id) @ 25°C: 225A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 546 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4.5V @ 3mA
auf Bestellung 556 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 110.96 EUR |
| 10+ | 84.67 EUR |
| 100+ | 76.58 EUR |