IXYP20N120B4 IXYS
Hersteller: IXYS
Description: IGBT 1200V 76A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
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Technische Details IXYP20N120B4 IXYS
Description: IGBT 1200V 76A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 47 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-220 (IXYP), Td (on/off) @ 25°C: 15ns/200ns, Switching Energy: 3.9mJ (on), 1.6mJ (off), Test Condition: 960V, 20A, 10Ohm, 15V, Gate Charge: 44 nC, Part Status: Active, Current - Collector (Ic) (Max): 76 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 130 A, Power - Max: 375 W.
Weitere Produktangebote IXYP20N120B4
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXYP20N120B4 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 76A; 375W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 76A Power dissipation: 375W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 130A Mounting: THT Gate charge: 44nC Kind of package: tube Turn-off time: 200ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXYP20N120B4 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 76A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 130A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 76A
Power dissipation: 375W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 130A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH