IXYK110N120C4 IXYS
Hersteller: IXYS
IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
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Technische Details IXYK110N120C4 IXYS
Description: IGBT 1200V 310A PLUS264, Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Power - Max: 1360 W, Current - Collector Pulsed (Icm): 740 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 310 A, Part Status: Active, Gate Charge: 330 nC, Test Condition: 600V, 50A, 2Ohm, 15V, Switching Energy: 3.6mJ (on), 1.9mJ (off), Td (on/off) @ 25°C: 40ns/320ns, Supplier Device Package: PLUS264™, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A, Reverse Recovery Time (trr): 48 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ).
Weitere Produktangebote IXYK110N120C4
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IXYK110N120C4 | Hersteller : IXYS |
Description: IGBT 1200V 310A PLUS264 Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Power - Max: 1360 W Current - Collector Pulsed (Icm): 740 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 310 A Part Status: Active Gate Charge: 330 nC Test Condition: 600V, 50A, 2Ohm, 15V Switching Energy: 3.6mJ (on), 1.9mJ (off) Td (on/off) @ 25°C: 40ns/320ns Supplier Device Package: PLUS264™ Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A Reverse Recovery Time (trr): 48 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) |
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