IXYK110N120C4 IXYS
Hersteller: IXYSIGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 41.55 EUR |
| 25+ | 31.86 EUR |
| 100+ | 25.26 EUR |
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Technische Details IXYK110N120C4 IXYS
Description: IGBT 1200V 310A PLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 48 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A, Supplier Device Package: PLUS264™, Td (on/off) @ 25°C: 40ns/320ns, Switching Energy: 3.6mJ (on), 1.9mJ (off), Test Condition: 600V, 50A, 2Ohm, 15V, Gate Charge: 330 nC, Part Status: Active, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 740 A, Power - Max: 1360 W.
Weitere Produktangebote IXYK110N120C4
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IXYK110N120C4 | Hersteller : IXYS |
Description: IGBT 1200V 310A PLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 48 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A Supplier Device Package: PLUS264™ Td (on/off) @ 25°C: 40ns/320ns Switching Energy: 3.6mJ (on), 1.9mJ (off) Test Condition: 600V, 50A, 2Ohm, 15V Gate Charge: 330 nC Part Status: Active Current - Collector (Ic) (Max): 310 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 740 A Power - Max: 1360 W |
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