IXYX110N120B4 IXYS
Hersteller: IXYSIGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
auf Bestellung 1275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 34.23 EUR |
| 10+ | 30.41 EUR |
| 30+ | 27.16 EUR |
| 120+ | 24.25 EUR |
| 270+ | 23.46 EUR |
| 510+ | 23.39 EUR |
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Technische Details IXYX110N120B4 IXYS
Description: IGBT 1200V 340A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A, Supplier Device Package: PLUS247™-3, Td (on/off) @ 25°C: 45ns/390ns, Switching Energy: 3.6mJ (on), 3.85mJ (off), Test Condition: 600V, 50A, 2Ohm, 15V, Gate Charge: 340 nC, Part Status: Active, Current - Collector (Ic) (Max): 340 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 800 A, Power - Max: 1360 W.
Weitere Produktangebote IXYX110N120B4
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXYX110N120B4 | Hersteller : Littelfuse |
Disc IGBT XPT Gen4 1200V 110A PLUS247 |
Produkt ist nicht verfügbar |
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IXYX110N120B4 | Hersteller : IXYS |
Description: IGBT 1200V 340A PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 45ns/390ns Switching Energy: 3.6mJ (on), 3.85mJ (off) Test Condition: 600V, 50A, 2Ohm, 15V Gate Charge: 340 nC Part Status: Active Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 800 A Power - Max: 1360 W |
Produkt ist nicht verfügbar |