IXYX110N120B4 IXYS
Hersteller: IXYS
IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
| Anzahl | Preis |
|---|---|
| 1+ | 42.54 EUR |
| 10+ | 31.82 EUR |
| 120+ | 28.18 EUR |
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Technische Details IXYX110N120B4 IXYS
Description: IGBT 1200V 340A PLUS247, Power - Max: 1360 W, Current - Collector Pulsed (Icm): 800 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 340 A, Part Status: Active, Gate Charge: 340 nC, Test Condition: 600V, 50A, 2Ohm, 15V, Switching Energy: 3.6mJ (on), 3.85mJ (off), Td (on/off) @ 25°C: 45ns/390ns, Supplier Device Package: PLUS247™-3, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A, Reverse Recovery Time (trr): 50 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.
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IXYX110N120B4 | Hersteller : IXYS |
Description: IGBT 1200V 340A PLUS247 Power - Max: 1360 W Current - Collector Pulsed (Icm): 800 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 340 A Part Status: Active Gate Charge: 340 nC Test Condition: 600V, 50A, 2Ohm, 15V Switching Energy: 3.6mJ (on), 3.85mJ (off) Td (on/off) @ 25°C: 45ns/390ns Supplier Device Package: PLUS247™-3 Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Reverse Recovery Time (trr): 50 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Packaging: Tube |
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