
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 8.4 EUR |
30+ | 7.78 EUR |
510+ | 7.62 EUR |
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Technische Details DSEP30-12B IXYS
Category: THT universal diodes, Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W, Case: TO247-2, Type of diode: rectifying, Semiconductor structure: single diode, Kind of package: tube, Reverse recovery time: 35ns, Max. forward voltage: 3.75V, Load current: 30A, Power dissipation: 165W, Max. forward impulse current: 200A, Max. off-state voltage: 1.2kV, Features of semiconductor devices: fast switching, Mounting: THT, Technology: HiPerFRED™, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DSEP30-12B
Foto | Bezeichnung | Hersteller | Beschreibung |
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DSEP30-12B | Hersteller : IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W Case: TO247-2 Type of diode: rectifying Semiconductor structure: single diode Kind of package: tube Reverse recovery time: 35ns Max. forward voltage: 3.75V Load current: 30A Power dissipation: 165W Max. forward impulse current: 200A Max. off-state voltage: 1.2kV Features of semiconductor devices: fast switching Mounting: THT Technology: HiPerFRED™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DSEP30-12B | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 12pF @ 600V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |
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DSEP30-12B | Hersteller : IXYS |
![]() Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W Case: TO247-2 Type of diode: rectifying Semiconductor structure: single diode Kind of package: tube Reverse recovery time: 35ns Max. forward voltage: 3.75V Load current: 30A Power dissipation: 165W Max. forward impulse current: 200A Max. off-state voltage: 1.2kV Features of semiconductor devices: fast switching Mounting: THT Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |