auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.4 EUR |
| 30+ | 7.78 EUR |
| 510+ | 7.62 EUR |
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Technische Details DSEP30-12B IXYS
Category: THT universal diodes, Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W, Mounting: THT, Case: TO247-2, Max. off-state voltage: 1.2kV, Max. forward voltage: 3.75V, Load current: 30A, Semiconductor structure: single diode, Reverse recovery time: 35ns, Max. forward impulse current: 200A, Power dissipation: 165W, Kind of package: tube, Type of diode: rectifying, Features of semiconductor devices: fast switching, Technology: HiPerFRED™, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DSEP30-12B
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DSEP30-12B | Hersteller : IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W Mounting: THT Case: TO247-2 Max. off-state voltage: 1.2kV Max. forward voltage: 3.75V Load current: 30A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 200A Power dissipation: 165W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ Anzahl je Verpackung: 1 Stücke |
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DSEP30-12B | Hersteller : IXYS |
Description: DIODE GEN PURP 1.2KV 30A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 12pF @ 600V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
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DSEP30-12B | Hersteller : IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W Mounting: THT Case: TO247-2 Max. off-state voltage: 1.2kV Max. forward voltage: 3.75V Load current: 30A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 200A Power dissipation: 165W Kind of package: tube Type of diode: rectifying Features of semiconductor devices: fast switching Technology: HiPerFRED™ |
Produkt ist nicht verfügbar |