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IXYA20N120C4HV

IXYA20N120C4HV IXYS


media-3320238.pdf Hersteller: IXYS
IGBT Transistors IGBT 4TH GENERATION GENX4
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Technische Details IXYA20N120C4HV IXYS

Description: IGBT 1200V 20A X4 HSPEED TO263D2, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 53 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-263HV, IGBT Type: PT, Td (on/off) @ 25°C: 14ns/160ns, Switching Energy: 4.4mJ (on), 1mJ (off), Test Condition: 960mV, 20A, 10Ohm, 15V, Gate Charge: 44 nC, Part Status: Active, Current - Collector (Ic) (Max): 68 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 375 W.

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IXYA20N120C4HV IXYA20N120C4HV Hersteller : IXYS littelfuse_discrete_igbts_xpt_ixy_20n120c4_datasheet.pdf.pdf Description: IGBT 1200V 20A X4 HSPEED TO263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
auf Bestellung 1099 Stücke:
Lieferzeit 10-14 Tag (e)
IXYA20N120C4HV Hersteller : Littelfuse media.pdf 1200V IGBT Chip Transistor
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