| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.4 EUR |
| 10+ | 9.09 EUR |
| 100+ | 9.07 EUR |
| 500+ | 7.46 EUR |
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Technische Details IXYA20N120B4HV IXYS
Description: IGBT PT 1200V 76A TO-263HV, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 47 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-263HV, IGBT Type: PT, Td (on/off) @ 25°C: 15ns/200ns, Switching Energy: 3.9mJ (on), 1.6mJ (off), Test Condition: 960mV, 20A, 10Ohm, 15V, Gate Charge: 44 nC, Part Status: Active, Current - Collector (Ic) (Max): 76 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 130 A, Power - Max: 375 W.
Weitere Produktangebote IXYA20N120B4HV
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXYA20N120B4HV | IXYS |
 Description: IGBT PT 1200V 76A TO-263HVPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-263HV IGBT Type: PT Td (on/off) @ 25°C: 15ns/200ns Switching Energy: 3.9mJ (on), 1.6mJ (off) Test Condition: 960mV, 20A, 10Ohm, 15V Gate Charge: 44 nC Part Status: Active Current - Collector (Ic) (Max): 76 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 130 A Power - Max: 375 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXYA20N120B4HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 76A; 375W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 76A Power dissipation: 375W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 130A Mounting: SMD Gate charge: 44nC Kind of package: tube Turn-off time: 200ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXYA20N120B4HV |
|
Hersteller: IXYS
Description: IGBT PT 1200V 76A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
Description: IGBT PT 1200V 76A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYA20N120B4HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 76A
Power dissipation: 375W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 130A
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 76A; 375W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 76A
Power dissipation: 375W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 130A
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-off time: 200ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH