Technische Details MMIX1X340N65B4 IXYS
Category: SMD IGBT transistors, Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD, Type of transistor: IGBT, Technology: BiMOSFET™; GenX3™; XPT™, Power dissipation: 1.2kW, Case: SMPD, Mounting: SMD, Gate charge: 553nC, Kind of package: tube, Collector-emitter voltage: 650V, Gate-emitter voltage: ±20V, Collector current: 295A, Pulsed collector current: 1.2kA, Turn-off time: 346ns, Turn-on time: 119ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MMIX1X340N65B4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MMIX1X340N65B4 | Hersteller : Littelfuse |
 High Performance 650V IGBT Chip |
Produkt ist nicht verfügbar |
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| MMIX1X340N65B4 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; XPT™ Power dissipation: 1.2kW Case: SMPD Mounting: SMD Gate charge: 553nC Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 295A Pulsed collector current: 1.2kA Turn-off time: 346ns Turn-on time: 119ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MMIX1X340N65B4 | Hersteller : IXYS |
IGBT Transistors IGBT SMPD PKG-STANDARD |
Produkt ist nicht verfügbar |
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| MMIX1X340N65B4 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 650V; 295A; 1.2kW; SMPD Type of transistor: IGBT Technology: BiMOSFET™; GenX3™; XPT™ Power dissipation: 1.2kW Case: SMPD Mounting: SMD Gate charge: 553nC Kind of package: tube Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 295A Pulsed collector current: 1.2kA Turn-off time: 346ns Turn-on time: 119ns |
Produkt ist nicht verfügbar |