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MDNA280UB2200PTED IXYS


Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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Technische Details MDNA280UB2200PTED IXYS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.7kV, Collector current: 100A, Case: E2-Pack, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.

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MDNA280UB2200PTED Hersteller : IXYS Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
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MDNA280UB2200PTED MDNA280UB2200PTED Hersteller : IXYS MDNA280UB2200PTED-1623243.pdf Discrete Semiconductor Modules BIPOLAR MODULE-RECT+BRAKE
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MDNA280UB2200PTED Hersteller : IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.7kV
Collector current: 100A
Case: E2-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mechanical mounting: screw
Produkt ist nicht verfügbar