
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 31.61 EUR |
10+ | 28.95 EUR |
25+ | 27.39 EUR |
100+ | 26.35 EUR |
250+ | 25.82 EUR |
500+ | 25.71 EUR |
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Technische Details IXFK98N50P3 IXYS
Description: MOSFET N-CH 500V 98A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V, Power Dissipation (Max): 1300W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V.
Weitere Produktangebote IXFK98N50P3
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFK98N50P3 | Hersteller : Littelfuse |
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auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK98N50P3 Produktcode: 156281
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IXFK98N50P3 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFK98N50P3 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 98A Power dissipation: 1.3kW Case: TO264 On-state resistance: 50mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFK98N50P3 | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V Power Dissipation (Max): 1300W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFK98N50P3 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 98A Power dissipation: 1.3kW Case: TO264 On-state resistance: 50mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |