IXYX30N170CV1 IXYS
Hersteller: IXYSDescription: IGBT 1700V 108A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 47.82 EUR |
| 30+ | 36.72 EUR |
| 120+ | 34.77 EUR |
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Technische Details IXYX30N170CV1 IXYS
Description: IGBT 1700V 108A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 160 ns, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A, Supplier Device Package: PLUS247™-3, Td (on/off) @ 25°C: 28ns/150ns, Switching Energy: 5.9mJ (on), 3.3mJ (off), Test Condition: 850V, 30A, 2.7Ohm, 15V, Gate Charge: 140 nC, Part Status: Active, Current - Collector (Ic) (Max): 108 A, Voltage - Collector Emitter Breakdown (Max): 1700 V, Current - Collector Pulsed (Icm): 255 A, Power - Max: 937 W.
Weitere Produktangebote IXYX30N170CV1 nach Preis ab 38 EUR bis 47.94 EUR
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IGBTs 1700V/108A High Voltage XPT IGBT |
auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYX30N170CV1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXYX30N170CV1 | Hersteller : IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; XPT™; 1.7kV; 30A; 937W; PLUS247™ Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 1.7kV Collector current: 30A Power dissipation: 937W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 150nC Kind of package: tube Turn-on time: 49ns Turn-off time: 327ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |

